The invention discloses a three-group
nitride micro-nano light-emitting device with an embedded
active layer and a manufacturing method. The light-emitting device comprises an initial light-emitting device, a transparent conducting layer, a p-type
electrode and an n-type
electrode; the initial light-emitting device is sequentially provided with a substrate, a three-group
nitride nucleating layer, a buffering layer, an n-type three-group
nitride layer, imaging 5 masking film, a selective epitaxial growth n-type three-group nitride structure, selective epitaxial growth exposed masking film at the top of the n-type three-group nitride structure, the three-group nitride
active layer and a p-type three-group nitride coverage layer from bottom to top. The three-group nitride
active layer is arranged between a part, which is not masked and covered, between the selective epitaxial growth n-type three-group nitride structure and the p-type three-group nitride coverage layer; the transparent conducting layer is deposited to the front face of the initial light-emitting device, the p-type
electrode is arranged on the transparent conducting layer, and the n-type electrode is arranged on the n-type three-group nitride layer or the bottom of the substrate. The light-emitting device (10) has the advantages of being controllable in position and size, stable in performance and ultra high in
quantum efficiency.