The invention discloses a manufacturing method of an
infrared reflecting device. The manufacturing method of the
infrared reflecting device comprises the following steps: making a first conductive light transmitting substrate and a second conductive light transmitting substrate at first, and enabling the two conductive light transmitting substrate to opposite to each other; manufacturing parallel orientation
layers on the opposite surfaces of the two conductive light transmitting substrates; manufacturing a
liquid crystal box by using the two conductive light transmitting substrates; mixing negative
liquid crystal, a chiral
dopant,
liquid crystal monomers and a
photoinitiator to obtain a liquid
crystal mixture; injecting the liquid
crystal mixture in the liquid
crystal box; connecting the first conductive light transmitting substrate with a negative pole of a power supply
assembly, connecting the second conductive light transmitting substrate with a positive pole of the power supply
assembly, capturing
impurity positive ions by using the liquid crystal monomers and / or the chiral
dopant so that the liquid crystal monomers and / or the chiral
dopant have positive charge, and enabling the liquid crystal monomers and / or the chiral dopant to continue moving towards the negative pole direction; and carrying out
ultraviolet irradiation to polymerize the liquid crystal monomers so as to form a
polymer network, and enabling the densities of the
polymer network to be distributed in a gradient manner in the direction perpendicular to the conductive light transmitting substrate to obtain the
infrared reflecting device with wide reflection bandwidth. By change of the direction of an
electric field, infrared reflection waveband can be adjusted.