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Method for forming nitride films through atomic layer deposition method

A technology of atomic layer deposition and nitride film, which is applied in coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of film thickness difference in nitride furnace and inconsistency of nitride film thickness, etc.

Active Publication Date: 2019-11-19
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

[0004] In addition, in other furnace tube ALD nitride film formation processes, there is also the above-mentioned problem of differences in film thickness in the nitride furnace, that is, there are also different heights of substrates (or wafers) formed on the surface of the reaction chamber. The film thickness of the nitride film is inconsistent

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  • Method for forming nitride films through atomic layer deposition method
  • Method for forming nitride films through atomic layer deposition method
  • Method for forming nitride films through atomic layer deposition method

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Embodiment Construction

[0028] With the development of the manufacturing process of semiconductor devices, atomic layer deposition (Atomic layer deposition, ALD) has been widely used in the formation process of the gate sidewall layer.

[0029] Atomic layer deposition (ALD) is a method that can coat a substance layer by layer on the surface of a substrate (wafer) in the form of a monoatomic film. The formation of a silicon nitride film uses the ALD method, and ALD SiN is Deposited at low temperature using a furnace tube. The structure of the furnace tube is as figure 1 shown. The furnace tube is a batch type vertical furnace, which can make a plurality of substrates (also called wafers or wafers) be supported in the respective boats 01 in a multi-stage manner at predetermined intervals, and the boats 01 are quartz boats , the boats 01 are contained in the cylindrical reaction chamber 02. During deposition, the boat 01 can be rotated by the rotation mechanism 03 . The heating mechanism 04 is insta...

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Abstract

The invention provides a method for forming nitride films through an atomic layer deposition method. The method for forming the nitride films comprises the following steps that S1, first source gas isintroduced into a reaction chamber and is adsorbed to the surface of each substrate at different height in the reaction chamber; S2, the first source gas which is not adsorbed is removed; and S3, second source gas is introduced into the reaction chamber and reacts with the first source gas adsorbed on the surface of each substrate so as to form one nitride film on the surface of each substrate, wherein third gas is introduced into the reaction chamber in each step, and the flow rate of the third gas in the step S1 and the step S3 is greater than the flow rate of the third gas in other steps.The method for forming nitride films has the advantages that through a method for increasing the flow rate of the third gas when the first source gas and the second source gas are introduced, the concentration of the reaction source gas at different positions in the reaction chamber is changed, and the uniformity of the nitride films in a furnace is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a nitride film by atomic layer deposition. Background technique [0002] At present, with the rapid development of ultra-large-scale integrated circuits, semiconductor devices need to achieve faster computing speeds and greater data storage capacity, making chips develop in the direction of higher element density and high integration. The quality problems of various gate sidewall layers caused by the high density and small size of the device will have a great impact on the performance of the device. How to form a high-quality gate sidewall layer is a concern in the semiconductor manufacturing process. question. [0003] The manufacturing technology of semiconductor devices has entered the process node below 40nm, and the requirements for film quality are getting higher and higher. At present, atomic layer deposition (Atomic layer deposition, ALD) ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C23C16/455
CPCC23C16/34C23C16/345C23C16/45525
Inventor 康俊龙
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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