50results about How to "Optimizing spin polarizability" patented technology

A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.

A magnetoresistance effect element includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction variable depending on an external magnetic field, and a nonmagnetic spacer layer disposed between the pinned layer and the free layer. The free layer includes a Heusler alloy layer and a magnetostriction reduction layer made of a 4th group element, a 5th group element, or a 6th group element.

The invention provides a magneto-resistor element with a three-decker memory layer. The magneto-resistor element comprises a reference layer, a barrier layer, the memory layer, a crystal lattice optimizing layer and a base layer which are sequentially adjacent to one another. The magnetization direction of the reference layer is unchanged, and the magnetic anisotropy of the reference layer is perpendicular to the layer surface. The magnetization direction of the memory layer is changed, and the magnetic anisotropy of the memory layer is perpendicular to the layer surface. The memory layer is composed of a first memory sub layer, a second memory sub layer and an inserting layer arranged between the first memory sub layer and the second memory sub layer, wherein the first memory sub layer, the second memory sub layer and the inserting layer are sequentially arranged adjacent to one another. The barrier layer is adjacent to the first memory sub layer. The crystal lattice optimizing layer is adjacent to the second memory sub layer, the crystal lattice optimizing layer is a material layer of a NaCl crystal lattice structure, and the crystal face of the crystal lattice optimizing layer is parallel to the plane of a base. The crystal lattice optimizing layer further includes at least one doping element, and the crystal lattice optimizing layer further can be of a double-decker structure. The magneto-resistor element further comprises a magnetic calibration layer and a spin polarization stable layer, and the magnetic calibration layer and the spin polarization stable layer are sequentially arranged between the base layer and the crystal lattice optimizing layer.

A Heusler alloy is an intercalated MnGa-based vertical magnetic tunnel junction, comprising: a substrate, which is the basis for realizing multilayer film epitaxial growth; a buffer layer, which is fabricated on the substrate, for smoothing the substrate surface and reducing the Small lattice mismatch; the lower electrode, which is made on the buffer layer, and epitaxial growth; the lower intercalation layer, which is made on the lower electrode, and epitaxial growth; one barrier layer, which is made on the lower intercalation layer; one upper intercalation layer, It is fabricated on the potential barrier layer and grown epitaxially; an upper electrode is fabricated on the upper intercalation layer and grown epitaxially; a covering layer is fabricated on the upper electrode to protect the lower structure. The invention has higher tunneling magnetoresistance effect.