Magnetic tunnel junction forming method and magnetic resistance random access memory

Abstract

The invention discloses a magnetic tunnel junction forming method comprising the steps of providing a substrate on which a bottom electrode is formed; and forming a magnetic tunnel junction on the bottom electrode, wherein the magnetic tunnel junction is composed of a first magnetic layer, a tunneling layer and a second magnetic layer sequentially stacked from the bottom up, both the first magnetic layer and the second magnetic layer have vertical anisotropy, when a current from the second magnetic layer to the first magnetic layer exists, the magnetic moment direction of the second magnetic layer is the same as that of the first magnetic layer, and when the direction of the current is opposite, the magnetic moment direction of the second magnetic layer is opposite to that of the first magnetic layer; ferromagnetic particles are injected into the junction of the tunneling layer and the first magnetic layer; and the magnetic moment direction of the ferromagnetic particles is the same asthat of the first magnetic layer. According to the method, the tunneling resistance ratio of the magnetic tunnel junction is improved, the property of the magnetic layer is not changed, and thus thenegative effects are not generated on the other magnetoelectric parameters of the tunnel junction. The invention also discloses a magnetic resistance random access memory.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular to a method for forming a magnetic tunnel junction and a magnetoresistive random access memory. Background technique [0002] With the development of storage technology, a magnetoresistive random access memory (MRAM, Magnetoresistive Random Access Memory) based on Magnetic Tunnel Junction (Magnetic Tunnel Junction, MTJ) has been widely used, which can be used independently or integrated with random access memory devices , such as in a processor, application-specific integrated circuit, or system-on-chip. [0003] The core structure of MRAM is MTJ, and the tunneling magneto-resistance ratio (Tunnel Magneto Resistance, TMR) of MTJ determines the readout window of MRAM, which in turn affects the readout efficiency of MRAM. Based on this, how to improve the TMR of MTJ is one of the research hotspots in the field of MRAM. [0004] In the MTJ structure of cobalt iron boron CoFeB / ...

AI Technical Summary

Problems solved by technology

Due to problems such as film growth and etching process, the structure of the above-mentioned MTJ often has defects. Therefore, additional auxiliary processes such as adjusting the thickness of the MTJ tunneling layer and high-temperature annealing to optimize the MTJ

[0005] However, as the thickness of the tunneling layer increases, the resistance area (Resistance Area, RA) of the MTJ also increases, which will affect the electrical properties of the MTJ.

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