Heusler alloy intercalated mnga-based vertical magnetic tunnel junction and preparation method
A perpendicular magnetic, tunnel junction technology with applications in the fabrication/processing of electromagnetic devices, material selection, field-controlled resistors, etc.
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[0028] In order to set forth the specific embodiment of the present invention more clearly, a specific example of a Heusler alloy intercalated MnGa-based vertical magnetic tunnel junction will be described below:
[0029] see figure 1 As shown, the present invention provides a kind of Heusler alloy as the intercalated MnGa-based vertical magnetic tunnel junction, comprising:
[0030] A substrate 1, which is a semi-insulating GaAs (001) material, is the basis for realizing the epitaxial growth of a multilayer film;
[0031] A buffer layer 2, grown epitaxially on the substrate 1, consists of about 4 nm thick semi-metal Heusler alloy Co 2 MnSi film composition for smoothing the substrate surface and buffering the lattice mismatch between the substrate and the long layer structure;
[0032] The lower electrode 3 is epitaxially grown on the buffer layer 2, consisting of about 20nm of L1 0 -MnGa thin film composition; the electrode material has high vertical magnetic anisotropy, ...
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