A multilayer film with double spacer layers that can form ferromagnetic or antiferromagnetic coupling

A technology of antiferromagnetic coupling and ferromagnetic layer, applied in the fields of non-volatile magnetic memory and magnetic logic, which can solve the problems of increased magnetic damping coefficient, inability to generate, strong perpendicular magnetic anisotropy, etc.

Active Publication Date: 2020-01-10
致真存储(北京)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When ruthenium (Ru) is used as the spacer material, due to the strong RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling effect of Ru, the interlayer coupling effect of the double-interface structure is significantly improved; however, Ru and the adjacent CoFeB interface Cannot generate strong perpendicular magnetic anisotropy
When tantalum (Ta) or hafnium (Hf) is used as the spacer material, although it can produce strong perpendicular magnetic anisotropy with the CoFeB interface, the magnetic damping coefficient will increase when Ta and Hf are adjacent to ferromagnetic materials.

Method used

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  • A multilayer film with double spacer layers that can form ferromagnetic or antiferromagnetic coupling
  • A multilayer film with double spacer layers that can form ferromagnetic or antiferromagnetic coupling
  • A multilayer film with double spacer layers that can form ferromagnetic or antiferromagnetic coupling

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Embodiment 1

[0035] image 3 Shown is a schematic structural diagram of the present invention as a free layer in a perpendicular magnetic anisotropic magnetic tunnel junction. During the fabrication process, the buffer layer 302 is firstly deposited on the substrate 301 , followed by the pinning layer 303 , the reference layer 304 , the second oxide barrier layer 305 , the free layer 308 and the capping layer 307 . In some embodiments, the buffer layer 302 is a Ta / Ru / Ta multilayer film, which is used to reduce surface roughness while promoting the formation of the growth crystal direction of the ultra-thin multilayer film; the pinning layer 303 is a Co / Pt multilayer film , used to fix the magnetization direction of the reference layer; the reference layer 304 is Co 20 Fe 60 B 20 , with a thickness of 1.3nm, whose magnetization direction is fixed by the pinning layer for reference; the material of the second oxide barrier layer 305 is MgO, with a thickness of 0.9nm, for providing tunneli...

Embodiment 2

[0038] Figure 4 Shown is a schematic structural diagram of the present invention as a free layer in an in-plane magnetic anisotropic magnetic tunnel junction. During the fabrication process, the buffer layer 402 is firstly deposited on the substrate 401 , followed by the pinning layer 403 , the reference layer 404 , the second oxide barrier layer 405 , the free layer 408 and the capping layer 407 . In some embodiments, the buffer layer 402 is a Ta / Ru / Ta multilayer film, which is used to reduce the surface roughness and at the same time promote the formation of the growth crystal direction of the ultrathin multilayer film; Magnetic material for fixing the magnetization direction of the reference layer; the reference layer 404 is Co 20 Fe 60 B 20 , with a thickness of 2.5nm, whose magnetization direction is fixed by the pinning layer for reference; the material of the second oxide barrier layer 405 is MgO, with a thickness of 0.9nm, for providing tunneling effect; the free l...

Embodiment 3

[0041] Figure 5 Shown is a schematic structural diagram of the present invention as a reference layer in a perpendicular magnetic anisotropy magnetic tunnel junction. During the fabrication process, the buffer layer 502 is firstly deposited on the substrate, followed by the pinning layer 503 , the reference layer 508 , the first oxide barrier layer 505 , the free layer 506 and the capping layer 507 . In some embodiments, the buffer layer 502 is a Ta / Ru / Ta multilayer film, which is used to reduce surface roughness while promoting the formation of the growth crystal direction of the ultra-thin multilayer film; the pinning layer 503 is a Co / Pt multilayer film , used to fix the magnetization direction of the reference layer; the reference layer 508 is composed of a second oxide barrier layer 504 structure and a multilayer film structure 200 that can exhibit perpendicular magnetic anisotropy, wherein the second oxide barrier layer 504 material is MgO, the thickness is 0.9nm; the ...

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Abstract

The present invention is a multi-layer film with double spacer layers and capable of forming ferromagnetic or antiferromagnetic coupling, at least comprising a first ferromagnetic layer and a second ferromagnetic layer, between the first ferromagnetic layer and the second ferromagnetic layer Between two spacers, two ferromagnetic layers are ferromagnetically or antiferromagnetically coupled together through interlayer coupling; the multilayer film can present perpendicular magnetic anisotropy, and the multilayer film is In-plane magnetic anisotropy can be present, and the multilayer film is the second ferromagnetic layer, the second spacer layer, the first spacer layer, and the first ferromagnetic layer from bottom to top; the first ferromagnetic layer And the second ferromagnetic layer refers to the film layer formed by ferromagnetic material. In the same structure, the upper and lower ferromagnetic layers can be coupled together ferromagnetically or antiferromagnetically through interlayer coupling. By selecting different properties The spacer material makes the multilayer film structure have different advantages, which can be used to realize the spintronic devices with the advantages of strong magnetic anisotropy, low damping coefficient, high tunneling magnetoresistance ratio value and so on.

Description

technical field [0001] The invention relates to a multilayer film with double spacers and capable of forming ferromagnetic or antiferromagnetic coupling, which can be used to realize spintronic devices with advantages such as strong magnetic anisotropy and low damping coefficient, and belongs to non-volatile Field of magnetic memory and magnetic logic technology. Background technique [0002] Magnetic random access memory (MRAM) is expected to become the next generation of low-power general-purpose memory due to its non-volatility, high-speed read and write, low power consumption, and nearly unlimited repeated erasing and writing. widespread attention in the world. [0003] The core device to realize the storage function in the magnetic random access memory is the magnetic tunnel junction (Magnetic Tunnel Junction, MTJ), and its effective structure generally includes a reference layer composed of ferromagnetic metals, a barrier layer composed of metal oxides, and a magnetic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/22H01L43/08
CPCH10B61/00H10N50/10
Inventor 赵巍胜赵晓璇彭守仲
Owner 致真存储(北京)科技有限公司
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