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Magnetic tunnel junction, forming method thereof and magnetic memory

A technology of magnetic tunnel junction and ferromagnetic layer, applied in the fields of magnetic field controlled resistors, components of electromagnetic equipment, manufacturing/processing of electromagnetic devices, etc., can solve the problem of low thermal stability

Inactive Publication Date: 2020-06-09
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, with the development of integration, there is a demand for further miniaturization of the volume of semiconductor devices. When the size of the magnetic tunnel junction is small, the thermal stability is low.

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  • Magnetic tunnel junction, forming method thereof and magnetic memory
  • Magnetic tunnel junction, forming method thereof and magnetic memory
  • Magnetic tunnel junction, forming method thereof and magnetic memory

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Embodiment Construction

[0044] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is an embodiment of a part of the application, but not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0045] The detailed features and advantages of the present invention are described in detail below in the embodiments, the content of which is sufficient to enable any person skilled in the art to understand the technical content of the present invention and implement it accordingly, and according to the content disclosed in this specification, claims a...

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Abstract

The invention provides a magnetic tunnel junction, a forming method thereof and a magnetic memory. The magnetic tunnel junction sequentially comprises a first ferromagnetic layer, an oxide barrier layer, a second ferromagnetic layer and a first body magnetic anisotropy ferromagnetic layer from bottom to top, wherein the second ferromagnetic layer and the first body magnetic anisotropy ferromagnetic layer are used as free layers of the magnetic tunnel junction, wherein the first ferromagnetic layer is used as the reference layer of the magnetic tunnel junction, and the first body magnetic anisotropy ferromagnetic layer is formed by a body perpendicular magnetic anisotropy ferromagnetic material; the first body magnetic anisotropy ferromagnetic layer formed by the body perpendicular magneticanisotropy ferromagnetic material is arranged on the second ferromagnetic layer, the first body magnetic anisotropy ferromagnetic layer and the second body magnetic anisotropy ferromagnetic layer achieve interlayer coupling, and therefore, the body perpendicular magnetic anisotropy constant of the magnetic tunnel junction is improved, and therefore, the magnetic tunnel junction has strong perpendicular magnetic anisotropy and high thermal stability; and when the size of the magnetic tunnel junction is small, thermal stability can still be guaranteed.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a magnetic tunnel junction, a forming method thereof, and a magnetic memory. Background technique [0002] A basic storage unit of a Magnetic Random Access Memory (MRAM for short) is a Magnetic Tunnel Junction (MTJ for short). The core part of the magnetic tunnel junction is a sandwich structure formed by two ferromagnetic layers sandwiching a tunneling barrier layer. One of the ferromagnetic layers has a constant magnetization direction and is called the reference layer. The other ferromagnetic layer is called the free layer, and when its magnetization direction is parallel or antiparallel to the reference layer, the magnetic tunnel junction is in a low-resistance or high-resistance state, respectively. The two resistive states can represent binary data "0" and "1" respectively. [0003] In order to keep the data in the magnetic tunnel junction for a long enough time, the free la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/02H01L43/12H10N50/10H10N50/01H10N50/80
CPCH10N50/80H10N50/01H10N50/10
Inventor 赵巍胜彭守仲芦家琪熊丹荣
Owner BEIHANG UNIV
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