43results about How to "Small damping coefficient" patented technology

The invention discloses a storage unit of a magnetic random access memory and the magnetic random access memory. The storage unit comprises a reference layer, a barrier layer, a first free layer whichare laminated, and also comprises a second free layer, a vertical magnetic coupling layer below the second free layer and a magnetic damping barrier layer above the second free layer. A magnetizationvector in the second free layer is always perpendicular to the first free layer and is parallel to a magnetization vector in the first free layer, the vertical magnetic coupling layer is used for realizing the strong magnetic coupling of the first free layer and the second free layer and providing an additional vertical interface anisotropic source, and the magnetic damping barrier layer providesan additional source of anisotropy while reducing the magnetic damping coefficient of a film layer. According to the invention, by adding the additional second free layer, the TMR is not influenced,the thickness of the free layer is increased, the magnetic damping coefficient is reduced, a thermal stability factor is increased, and the critical write current is not increased.

This invention discloses a tapered damp oil buffer used in a vacuum breaker including an oil cylinder, an end cover, a sealed coil, a piston component and a spreader spring, in which, the piston component and the spreader spring are set in the oil cylinder including a working region and a guide hole filled with buffer oil and sealed with an end cover and a sealing loop characterizing that: the clearance between the piston and the oil cylinder working region is a variable value, and the clearance is large in the prophase of the movement of the piston and the clearance is small in the latter perion of the movement, and the distribution of the brake of the oil buffer is matched to the braking process of a switch device.

The invention discloses a silicon resonation type pressure sensor based on a synovial membrane differential structure and a manufacturing method thereof, belonging to the technical field of sensors. The silicon resonation type pressure sensor mainly comprises a resonator 2, a strut 1, a pressure sensing membrane 3 and a frame 4, wherein the upper part of the frame 4 is connected with four sides of the pressure sensing membrane 3, and the lower part is provided with a cavity at the place corresponding to the pressure sensing membrane 3 so that tested air gets into contact with the pressure sensing membrane 3 after passing through the cavity. The strut 1 is arranged on the upper surface of the pressure sensing membrane 3, while the resonator 2 is suspended on the upper surface of the pressure sensing membrane 3 through the strut 1and the frame 4. The silicon resonation type pressure sensor simplifies the manufacturing process and the layout and reduces the influence of air leakage during packaging to the performance of the sensor; and the adopted differential structure can restrain the common-mode noise and increase the sensitivity, thereby improving the noise-signal ratio of an output signal and lowering the detection difficulty of external circuits.

The invention provides a magneto-resistor element with a three-decker memory layer. The magneto-resistor element comprises a reference layer, a barrier layer, the memory layer, a crystal lattice optimizing layer and a base layer which are sequentially adjacent to one another. The magnetization direction of the reference layer is unchanged, and the magnetic anisotropy of the reference layer is perpendicular to the layer surface. The magnetization direction of the memory layer is changed, and the magnetic anisotropy of the memory layer is perpendicular to the layer surface. The memory layer is composed of a first memory sub layer, a second memory sub layer and an inserting layer arranged between the first memory sub layer and the second memory sub layer, wherein the first memory sub layer, the second memory sub layer and the inserting layer are sequentially arranged adjacent to one another. The barrier layer is adjacent to the first memory sub layer. The crystal lattice optimizing layer is adjacent to the second memory sub layer, the crystal lattice optimizing layer is a material layer of a NaCl crystal lattice structure, and the crystal face of the crystal lattice optimizing layer is parallel to the plane of a base. The crystal lattice optimizing layer further includes at least one doping element, and the crystal lattice optimizing layer further can be of a double-decker structure. The magneto-resistor element further comprises a magnetic calibration layer and a spin polarization stable layer, and the magnetic calibration layer and the spin polarization stable layer are sequentially arranged between the base layer and the crystal lattice optimizing layer.

A low-noise hydrophone element suitable for a wave glider belongs to the technical field of underwater acoustic receiving transducers. The invention aims to solve the problems of many blind spots and inaccurate visual positioning in existing manual inspections of substations. The invention includes a curved disc hydrophone, a support ring, three suspension springs, an upper sound-transmitting flow-guiding positioning cover, a lower sound-transmitting flow-guiding positioning cover and a balance wing plate; In the circular hole on the wing plate, the curved disk hydrophone is a cylindrical structure, which is set in the center of the support ring. The end of the three suspension springs far from the hydrophone is installed on the support ring, and the end near the hydrophone is installed on the support ring. On the side of the curved disc hydrophone, the upper and lower sound-transmitting guide positioning covers have the same structure, and are symmetrically installed on the upper and lower sides of the circular hole of the balance wing plate, so that the curved disc hydrophone is placed in the cavity of the upper and lower sound-transmitting guide positioning cover , and the cavity has the amplitude space for the vibration of the curved disk hydrophone. The invention is applicable to wave glider.

An ocean energy development platform includes: a sealed structure providing an accommodating chamber with electrostatic shielding function; and N energy collection units integrated in the accommodating chamber. Preferably, in some or all of the N energy collection units, each energy collection unit includes: a double pendulum structure; and a generator structure. The generator structure is arranged on one side or both sides of the double-wire pendulum structure, and is used for converting the mechanical energy in the swinging state of the double-wire pendulum structure into electrical energy. Effectively solve the problems of seawater corrosion caused by the traditional energy harvesting unit directly contacting seawater, seawater electrostatic induction weakening energy harvesting efficiency and electrical output performance, maintenance difficulties, etc., and effectively achieve lower damping coefficient, high frequency output and ultra-high frequency. Due to the high volume power density output, the output performance of the generator on this platform is 1-2 orders of magnitude higher than that of the traditional triboelectric nanogenerator to collect ocean energy, which has high practical value.

The invention provides a magneto-resistor element with double optimization layers. The magneto-resistor element comprises a reference layer, a barrier layer, a memory layer, a first lattice optimization layer, a second lattice optimization layer and a base layer which are adjacent to one another in sequence. The magnetization direction of the reference layer is changeless and perpendicular to the layer surface in a magnetic anisotropy mode. The magnetization direction of the memory layer is changeable and perpendicular to the layer surface in a magnetic anisotropy mode. The barrier layer is located between the memory layer and the reference layer and is adjacent to the memory layer and the reference layer respectively. The first lattice optimization layer is adjacent to the memory layer and is a material layer of a NaCl lattice structure, and the (100) crystal plane of the first lattice optimization layer is parallel to the substrate plane. The second lattice optimization layer is a NaCl lattice material layer including at least one doping element, and the (100) crystal plane of the second lattice optimization layer is parallel to the substrate plane. The magneto-resistor element further comprises a magnetic correction layer and a spin polarization stabilization layer which are sequentially arranged between the base layer and the second lattice optimization layer.