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Semi-metal synthetic anti-ferromagnetic structure

A technology for synthesizing antiferromagnetism and semimetals, which is applied in the field of magnetic storage, can solve the problems of increased control energy consumption, increased magnetic switching field strength, and increased demagnetization field, and achieve high storage density, magnetoresistivity and thermal stability The effect of improving and reducing the magnetic switching field

Inactive Publication Date: 2009-12-02
UNIV OF SCI & TECH BEIJING
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

The key to improving the magnetic storage density is to reduce the size of the magnetic memory unit and the magnetic head. However, with the reduction of the device size, the aspect ratio of the free layer decreases, the demagnetization field increases sharply, and even leads to complex ferromagnetic films in SPV. In the multi-domain state, the magnetic switching field intensity required to change the magnetization direction of the free layer increases sharply, the control energy consumption increases, and the thermal stability decreases

Method used

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Embodiment Construction

[0008] According to the above structure, the inventors have prepared the following 63 three-layer film structures by using magnetron sputtering or molecular beam epitaxy: the characteristics are based on the semi-metallic material [Co 2 FeAl, Co 2 FeSi, Co 2 MnSi, Co 2 CrAl, Co 2 Fe(Al 1-x Si x )(02 (Fe 1-x mn x ) Si (02 BC type Heusler alloy] is a magnetic layer of synthetic antiferromagnetic structure. The detailed preparation process of the above three-layer film is as follows: the background vacuum degree of the sputtering chamber is 2×10 -5 Pa, the pressure of argon (99.99%) during sputtering is 0.5 Pa, and the substrate is cooled with circulating water.

[0009]

[0010]

[0011]

[0012] Through testing, the above-mentioned devices can realize strong antiferromagnetic coupling in different degrees, and the magnetic switching field is lower than 10Oe. The antiferromagnetic coupling can be maintained above 400 °C. This makes the structure fully applicab...

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Abstract

The invention relates to a semi-metal synthetic anti-ferromagnetic structure, which belongs to the technical field of magnetic storage. The semi-metal synthetic anti-ferromagnetic structure has the characteristics that an A2BC-type Heusler alloy material of which all Co occupy an A position is used as a magnetic layer to form the sandwich structure of a semi-metal layer / a ruthenium layer / a semi-metal layer; and the magnetic directions of both semi-metal layers realize anti-ferromagnetic coupling. The semi-metal synthetic anti-ferromagnetic structure has the advantages that in the semi-metal synthetic anti-ferromagnetic structure, a cobalt element in the semi-metal material and metal ruthenium can form strong anti-ferromagnetic coupling to ensure the anti-ferromagnetic coupling configuration of a three-layer film; and simultaneously, high-spin polarization, low-saturation magnetization and low-coercivity semi-metal material is used as the magnetic layer, the semi-metal synthetic anti-ferromagnetic structure can reduce the magnetic flip field of a device, improve magnetic resistivity and thermal stability, and make ultra-high storage density become possible.

Description

technical field [0001] The invention belongs to the technical field of magnetic storage, and provides a half-metal synthetic antiferromagnetic structure with high magnetic sensitivity and high thermal stability. This kind of synthetic antiferromagnetic structure with half-metal material as the magnetic layer can reduce the control energy consumption, and it can increase the magnetoresistance when applied in spin valve and magnetic tunnel junction, so as to achieve ultra-high storage density, and will be widely used in new magnetic fields. In devices such as sensors or magnetic random access memory. Background technique [0002] Spin Valve (SPV for short) structure (ferromagnetic layer / copper / ferromagnetic layer / antiferromagnetic layer) and magnetic tunnel junction (Magnetic Tunneling Junction, MTJ for short) structure (ferromagnetic layer / oxide / ferromagnetic layer layer / antiferromagnetic layer) has been widely used in the fields of magnetic read head, magnetic random access...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/32H01F10/14G11B5/66G11B5/84
Inventor 徐晓光张德林姜勇
Owner UNIV OF SCI & TECH BEIJING
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