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1266results about "Magnetic layers" patented technology
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Alignable diffractive pigment flakes
Diffractive pigment flakes are selectively aligned to form an image. In one embodiment, flakes having a magnetic layer are shaped to facilitate alignment in a magnetic field. In another embodiment, the flakes include a magnetically discontinuous layer. In a particular embodiment, deposition of nickel on a diffraction grating pattern produces magnetic needles along the grating pattern that allow magnetic alignment of the resulting diffractive pigment flakes. Color scans of test samples of magnetically aligned flakes show high differentiation between illumination parallel and perpendicular to the direction of alignment of the magnetic diffractive pigment flakes.
Owner:VIAVI SOLUTIONS INC
Spin transfer magnetic element having low saturation magnetization free layers
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and / or ferrimagnetically doped to provide low saturation magnetization(s).
Owner:SAMSUNG SEMICON
Spin transfer magnetic element having low saturation magnetization free layers
ActiveUS20050184839A1Current densityNanostructure applicationNanomagnetismMagnetic memoryNon magnetic
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and / or ferrimagnetically doped to provide low saturation magnetization(s).
Owner:SAMSUNG SEMICON
Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device
InactiveUS6950335B2Good reproducibilityEliminate errorsNanomagnetismMagnetic-field-controlled resistorsMagnetizationSemiconductor
Magnetic tunnel junction magnetic device (16) for writing and reading uses a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The blocking temperature of the magnetisation of the storage layer is less than that of the reference layer. The storage layer is heated (22, 24) above the blocking temperature of its magnetisation. A magnetic field (34) is applied (26) to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.
Owner:COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Method and system for providing a magnetoresistive structure
A method and system for providing a magnetoresistive structure are described. The magnetoresistive structure includes a first electrode, an insertion layer, a crystalline tunneling barrier layer, and a second electrode. The first electrode includes at least a first magnetic material and boron. The crystalline tunneling barrier layer includes at least one constituent. The insertion layer has a first boron affinity. The at least one constituent of the crystalline tunneling barrier layer has at least a second boron affinity that is less than the first boron affinity. The second electrode includes at least a second magnetic material.
Owner:WESTERN DIGITAL TECH INC
System and method for writing to a magnetic shift register
InactiveUS6898132B2Variable capacityHigh cost of readingLiquid applicationDigital storageShift registerMolecular physics
A writing device can change the direction of the magnetic moment in a magnetic shift register, thus writing information to the domains or bits in the magnetic shift register. Associated with each domain wall are large magnetic fringing fields. The domain wall concentrates the change in magnetism from one direction to another in a very small space. Depending on the nature of the domain wall, very large dipolar fringing fields can emanate from the domain wall. This characteristic of magnetic domains is used to write to the magnetic shift register. When the domain wall is moved close to another magnetic material, the large fields of the domain wall change the direction of the magnetic moment in the magnetic material, effectively “writing” to the magnetic material.
Owner:GLOBALFOUNDRIES US INC
Magnetic shift register with shiftable magnetic domains between two regions, and method of using the same
InactiveUS7031178B2Highly localized and large magnetic fieldsComparable in costLiquid applicationDigital storageShift registerProcessor register
A magnetic shift register uses the inherent, natural properties of domain walls in magnetic materials to store data. The shift register uses spin electronics without changing the physical nature of its constituent materials. The shift register comprises a fine track or strip of magnetic materials. Information is stored as domain walls in the track. An electric current is applied to the track to move the magnetic moments along the track past a reading or writing device. In a magnetic material with domain walls, a current passed across the domain wall moves the domain wall in the direction of the current flow. As the current passes through a domain, it becomes “spin polarized”. When this spin polarized current passes through the next domain and across a domain wall, it develops a circle of spin torque. This spin torque moves the domain wall.
Owner:GLOBALFOUNDRIES U S INC
Exchange coupling film, magneto-resistance effect device, magnetic head, and magnetic random access memory
A foundation layer increasing adhesive properties to a substrate, another foundation layer controlling orientation of an antiferromagnetic layer, the antiferromagnetic layer including a disordered alloy of IrMn, a pinning layer, and a cap protection layer are formed in the order on the substrate. The pinning layer includes two layers having an exchange coupling giving layer which exchange-couples to the antiferromagnetic layer and an exchange coupling enhancement layer which enhances the exchange coupling, the exchange coupling giving layer is made of a ferromagnetic material including Co or a Co100-XFeX alloy (O<=X<25) having face-centered cubic structure. The exchange coupling enhancement layer is made of Fe or a Co100-YFeY alloy (25<=Y<=100) having body-centered cubic structure.
Owner:NEC CORP
Thin films for magnetic device
InactiveUS7220669B2Inhibit migrationIncreasing the thicknessNanostructure applicationNanomagnetismDielectricThin layer
Methods are provided for forming uniformly thin layers in magnetic devices. Atomic layer deposition (ALD) can produce layers that are uniformly thick on an atomic scale. Magnetic tunnel junction dielectrics, for example, can be provided with perfect uniformity in thickness of 4 monolayers or less. Furthermore, conductive layers, including magnetic and non-magnetic layers, can be provided by ALD without spiking and other non-uniformity problems. The disclosed methods include forming metal oxide layers by multiple cycles of ALD and subsequently reducing the oxides to metal. The oxides tend to maintain more stable interfaces during formation.
Owner:ASM INTERNATIONAL
Method of manufacturing magnetic recording medium
InactiveUS20100000966A1Excellent magnetic propertiesLow positioning accuracy requirementsDecorative surface effectsConductive/insulating/magnetic material on magnetic film applicationEngineeringRecording layer
According to one embodiment, a method of manufacturing a magnetic recording medium includes depositing a magnetic recording layer on a substrate, forming masks on areas corresponding to recording regions of the magnetic recording layer, partially etching the magnetic recording layer in areas not covered with the masks with an etching gas to form protrusions and recesses on the magnetic recording layer, modifying the magnetic recording layer remaining in the recesses with Ne gas to form non-recording regions, and forming a protecting film on an entire surface.
Owner:KK TOSHIBA
Radio Frequency Device with Magnetic Element, Method for Making Such a Magnetic Element
InactiveUS20080297292A1Easy to controlAdjustable angleNanomagnetismVacuum evaporation coatingRadio frequencyPhysics
Owner:STMICROELECTRONICS SRL +1
Alignable diffractive pigment flakes
Diffractive pigment flakes are selectively aligned to form an image. In one embodiment, flakes having a magnetic layer are shaped to facilitate alignment in a magnetic field. In another embodiment, the flakes include a magnetically discontinuous layer. In a particular embodiment, deposition of nickel on a diffraction grating pattern produces magnetic needles along the grating pattern that allow magnetic alignment of the resulting diffractive pigment flakes. Color scans of test samples of magnetically aligned flakes show high differentiation between illumination parallel and perpendicular to the direction of alignment of the magnetic diffractive pigment flakes.
Owner:VIAVI SOLUTIONS INC
Electromagnetic noise suppressor, article with electromagnetic noise suppressing function, and their manufacturing methods
InactiveUS20060083948A1Eliminate the effects ofMeet cutting requirementsMagnetic/electric field screeningCross-talk/noise/interference reductionGas phaseSuppressor
An electromagnetic noise suppressor of the present invention includes a base material 2 containing a binding agent and a composite layer 3 formed by integrating the binding agent that is a part of the base material 2 and the magnetic material. This electromagnetic noise suppressor has high electromagnetic noise suppressing effect in the sub-microwave band, and enables it to reduce the space requirement and weight. The electromagnetic noise suppressor can be manufactured by forming the composite layer 3 on the surface of the base material 2 by physical vapor deposition of the magnetic material onto the surface of the base material 2. The article with an electromagnetic noise suppressing function of the present invention is an electronic component, a printed wiring board, a semiconductor integrated circuit or other article of which at least a part of the surface is covered by the electromagnetic noise suppressor of the present invention.
Owner:SHIN-ETSU POLYMER CO LTD
Magnetoresistive effect element, magnetic memory cell using same, and random access memory
ActiveUS20130028013A1Raise the ratioNanomagnetismMagnetic-field-controlled resistorsStatic random-access memoryRandom access memory
Provided is a magnetoresistive effect element which uses a perpendicularly magnetized material and has a high TMR ratio. Intermediate layers 31, 32 composed of an element metal having a melting point of 1600° C. or an alloy containing the metal on an outside of a structure consisting of a CoFeB layer 41, an MgO barrier layer 10, and a CoFeB layer 42. By inserting the intermediate layers 31, 32, crystallization of the CoFeB layer during annealing is advanced from an MgO (001) crystal side, so that the CoFeB layer has a crystalline orientation in bcc (001).
Owner:TOHOKU UNIV
Magnetic device with magnetic tunnel junction, memory array and read/write methods using same
InactiveUS20050002228A1Good reproducibilityEliminate errorsNanomagnetismMagnetic-field-controlled resistorsSemiconductorTunnel junction
Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device. Said device (16) comprises a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The blocking temperature of the magnetisation of the storage layer is less than that of the reference layer. The device further comprises means (22, 24) for heating the storage layer above the blocking temperature of its magnetisation and means (26) for applying to it a magnetic field (34) orientating its magnetisation in relation to that of the reference layer without modifying the orientation of said reference layer.
Owner:COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Magnetic tunnel magneto-resistance device and magnetic memory using the same
ActiveUS7379280B2Thermal stability (thermal treatment resistance)Improve thermal stabilityNanomagnetismMagnetic measurementsMagnetic memoryMagnetic reluctance
A magneto-resistance device is composed of an anti-ferromagnetic layer (5), a pinned ferromagnetic layer (20), a tunnel insulating layer (9) and a free ferromagnetic layer (21). The pinned ferromagnetic layer (20) is connected to the anti-ferromagnetic layer (5) and has a fixed spontaneous magnetization. The tunnel insulating layer (9) is connected to the pinned ferromagnetic layer (20) and is non-magnetic. The free ferromagnetic layer (21) is connected to the tunnel insulating layer (9) and has a reversible free spontaneous magnetization. The pinned ferromagnetic layer (20) has a first composite magnetic layer (6) to prevent at lest one component of the anti-ferromagnetic layer (5) from diffusing into tunnel insulating layer (9).
Owner:NEC CORP
High output nonvolatile magnetic memory
InactiveUS6842368B2Reduce in quantityReduced Power RequirementsNanomagnetismMagnetic-field-controlled resistorsBit lineSpin-transfer torque
A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.
Owner:HITACHI LTD
Magnetic sensing element with side shield layers
InactiveUS6980403B2Minimized increaseAvoid readingNanomagnetismMagnetic measurementsComposite filmElectrical and Electronics engineering
A magnetic sensing element of a current-perpendicular-to-plane (CPP) type that minimizes an increase in effective read track width and prevents side reading is provided. The magnetic sensing element includes a composite film, an upper shield layer, a lower shield layer, and side shield layers. The side shield layers are disposed at the two sides of the composite film in the track width direction between the lower shield layer and the upper shield layer.
Owner:TDK CORPARATION
Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
A magnetic thin film element is provided with a magnetoresistive film including a first magnetic layer composed of a perpendicular magnetization film, a second magnetic layer composed of a perpendicular magnetization film having a higher coercive force than that of the first magnetic layer, and a nonmagnetic layer interposed between the first magnetic layer and the second magnetic layer. The resistance of the magnetoresistive film varies depending on whether or not the magnetic spins of the first magnetic layer and the second magnetic layer are in the same direction.
Owner:CANON KK
Magnetic media with improved exchange coupling
InactiveUS6899959B2Easy and fast switchingImprove thermal stabilityDifferent record carrier formsRecord information storageInter layerMagnetic media
A magnetic recording medium includes a substrate, an underlayer, a lower magnetic layer formed on the underlayer, an intermediate layer, and an upper magnetic layer formed on the intermediate layer. The intermediate layer is typically Ru, and promotes antiferromagnetic coupling between the upper and lower magnetic layers. The upper and lower magnetic layers are typically Co alloys. The lower magnetic layer has a high saturation magnetization Ms to promote high exchange coupling between the upper and lower magnetic layers. The dynamic coercivity of the lower magnetic layer is lower than the exchange field to ensure rapid switching of the lower magnetic layer.
Owner:WESTERN DIGITAL TECH INC
Power receiving device, and electronic apparatus and non-contact charging system using the same
ActiveUS20090121677A1Low efficiencyTransformersCells structural combinationElectric powerSpiral coil
An electronic apparatus (1) includes a power receiving device (2) and an electronic apparatus main body (3). The power receiving device (2) includes a power receiving coil (11) having a spiral coil, a rectifier (12), and a secondary battery (13). The electronic apparatus main body (3) includes an electronic device (14) and a circuit board (15). A magnetic foil (16) is arranged in at least one position between the spiral coil (11) and the secondary battery (13), the rectifier (12), the electronic device (14), or the circuit board (15). The magnetic foil (16) has a μr′·t value expressed as the product of the real component μr′ of relative permeability and the plate thickness t of 30000 or larger.
Owner:KK TOSHIBA +1
Method of adjusting CoFe free layer magnetostriction
InactiveUS6998150B2Low constantLow coercivityNanostructure applicationNanomagnetismCopperOXYGEN EXPOSURE
It has been found that the insertion of a copper laminate within CoFe, or a CoFe / NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and / or the position and number of the oxygen treated copper laminates.
Owner:HEADWAY TECH INC
Magnetic memory device capable of passing bidirectional currents through the bit lines
InactiveUS6950369B2Reduce manufacturing costSkip the manufacturing processNanoinformaticsMagnetic-field-controlled resistorsBit lineMagnetic memory
A plurality of word lines (WL1) are provided in parallel to one another and a plurality of bit lines (BL1) are provided in parallel to one another, intersecting the word lines (WL1) thereabove. MRAM cells (MC2) are formed at intersections of the word lines and the bit lines therebetween. MRAM cells (MC3) are provided so that an easy axis indicated by the arrow has an angle of 45 degrees with respect to the bit lines and the word lines. Thus, an MRAM capable of cutting the power consumption in writing is achieved and further an MRAM capable of reducing the time required for erasing and writing operations is achieved.
Owner:RENESAS ELECTRONICS CORP
Novel process and structure to fabricate CPP spin valve heads for ultra-hing recording density
InactiveUS20050201022A1Enhanced Specular ReflectionIncrease bulk scatteringNanostructure applicationNanomagnetismDopantSpins
A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen doped by adding a partial O2 pressure to the Ar sputtering gas during deposition. Oxygen doped CoFe free and pinned layers are made slightly thicker to offset a small decrease in magnetic moment caused by the oxygen dopant. Incorporating oxygen in the MnPt AFM layer enhances the exchange bias strength. An insertion layer such as a nano-oxide layer is included in one or more of the free, pinned, and spacer layers to increase interfacial scattering. The thickness of all layers except the copper spacer may be increased to enhance bulk scattering. A CPP-GMR single or dual spin valve of the present invention has up to a threefold increase in resistance and a 2 to 3% increase in MR ratio.
Owner:HEADWAY TECH INC
Perpendicular magnetic recording disk and manufacturing method thereof
ActiveUS8603650B2Improve noiseImprove recording densityNanomagnetismVacuum evaporation coatingAlloyRecording layer
A magnetic disk 10 for use in perpendicular magnetic recording has at least a magnetic recording layer on a substrate 1. The magnetic recording layer is composed of a ferromagnetic layer 5 of a granular structure containing silicon (Si) or an oxide of silicon (Si) between crystal grains containing cobalt (Co), a stacked layer 7 having a first layer containing cobalt (Co) or a Co alloy and a second layer containing palladium (Pd) or platinum (Pt), and a spacer layer 6 interposed between the ferromagnetic layer 5 and the stacked layer 7. After forming the ferromagnetic layer 5 on the substrate 1 by sputtering in an argon gas atmosphere, the stacked layer 7 is formed by sputtering in the argon gas atmosphere at a gas pressure lower than that used when forming the ferromagnetic layer 5.
Owner:WESTERN DIGITAL TECH INC
Method of patterning magnetic products using chemical reactions
InactiveUS6841224B2Improve productivityFlat surfaceNanoinformaticsSolid-state devicesHalogenChemical reaction
A method of patterning magnetic material includes forming a ferromagnetic material layer containing one element selected from the group consisting of Fe, Co and Ni on a substrate, selectively masking a surface of the ferromagnetic material layer, and making nonferromagnetic. The making nonferromagnetic step includes exposing an exposed portion in halogen-containing reaction gas, changing magnetism of the exposed portion and a lower layer thereof by chemical reaction, and making the exposed portion a nonferromagnetic material region. A magnetic recording medium is fabricated by using the magnetic material patterning method and includes a plurality of recording regions made of ferromagnetic materials, each containing at least one element selected from the group consisting of Fe, Co and Ni, and a nonferromagnetic material region for separating the recording regions from each other. The nonferromagnetic material region is a compound region of the ferromagnetic material and halogen.
Owner:KK TOSHIBA
Magnetic shift register with shiftable magnetic domains between two regions, and method of using the same
InactiveUS20050094427A1Comparable in costIncrease memory capacityLiquid applicationDigital storageShift registerSpins
A magnetic shift register uses the inherent, natural properties of domain walls in magnetic materials to store data. The shift register uses spin electronics without changing the physical nature of its constituent materials. The shift register comprises a fine track or strip of magnetic materials. Information is stored as domain walls in the track. An electric current is applied to the track to move the magnetic moments along the track past a reading or writing device. In a magnetic material with domain walls, a current passed across the domain wall moves the domain wall in the direction of the current flow. As the current passes through a domain, it becomes “spin polarized”. When this spin polarized current passes through the next domain and across a domain wall, it develops a circle of spin torque. This spin torque moves the domain wall.
Owner:GLOBALFOUNDRIES US INC
Magnetic random access memory and method of writing data in magnetic random access memory
InactiveUS6970376B1NanomagnetismSemiconductor/solid-state device detailsStatic random-access memoryRandom access memory
A magnetic random access memory includes first and second write wirings extended in first and second directions, a magneto-resistance element located between the first and second write wirings, a first yoke layer provided on a first outer surface and both sides of the first write wiring and being formed of a magnetic layer, and a second yoke layer provided on a second outer surface and both sides of the second write wiring and being formed of a magnetic layer, wherein the magneto-resistance element has a recording layer formed of a ferromagnetic substance and comprising a first surface and a second surface, a first ferromagnetic layer provided on the first surface, a second ferromagnetic layer provided on the second surface, a first nonmagnetic layer provided between the recording layer and the first ferromagnetic layer, and a second nonmagnetic layer provided between the recording layer and the second ferromagnetic layer.
Owner:KK TOSHIBA
Thin-film magnetic device with strong spin polarisation perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a device
ActiveUS20080031035A1Improve scalabilityImprove adhesionNanomagnetismMagnetic measurementsIn planeHigh rate
A thin-film magnetic device comprises, on a substrate, a composite assembly deposited by cathode sputtering and consists of a first layer made of a ferromagnetic material with a high rate of spin polarisation, the magnetisation of which is in plane in the absence of any electric or magnetic interaction, a second layer made of a magnetic material with high perpendicular anisotropy, the magnetisation of which is outside the plane of said layer in the absence of any electric or magnetic interaction, and coupling of which with said first layer induces a decrease in the effective demagnetising field of the entire device, a third layer that is in contact with the first layer via its interface opposite to that which is common to the second layer and made of a material that is not magnetic and not polarising for electrons passing through the device.
Owner:COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES +1
Magnetoresistor with tunnel effect and magnetic sensor using same
Tunnel effect magnetoresistance comprising, in the form of a stack:a first layer (12) of free magnetisation magnetic material,a "barrier" layer (16), composed of an electrically insulating material, anda second layer (14) of trapped magnetisation magnetic material,According to the invention, the thickness of the first layer (12) of magnetic material is less than 10 nm.The invention may be particularly applied to the manufacture of magnetic data read heads.
Owner:COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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