41results about How to "Softer characteristic" patented technology

In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.

A torque converter having a converter housing which is coupled to a driving unit, a turbine wheel which is arranged in the converter housing and is rotatable with respect to the converter housing about an axis of rotation and has a turbine wheel shell and a turbine wheel hub which is connected with the turbine wheel shell and which can be coupled with or is coupled with a converter driven shaft. A lockup clutch provides selectable rotational coupling of the converter housing with the turbine wheel, and a torsional vibration damper arrangement is provided in the power transmission path between the converter housing and the turbine wheel hub and/or between the turbine wheel shell and the turbine wheel hub. A friction device is connected parallel to the torsional vibration damper arrangement in the power transmission path for generating a frictional force which may be changed in a selected manner.

A circuit having: an input matching network; a transistor coupled to an output of the input matching network; and wherein the input matching network has a first input impedance when such input matching network is fed with an input signal having a relatively low power level and wherein the input matching network has an input impedance different from the first input impedance when such input matching network is fed with an input signal having a relatively high power level.

A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer.

A magnetoresistive sensor comprises a pinned layer having a magnetization direction fixed with respect to an external magnetic field, a free layer, having a magnetization direction variable in accordance with the external magnetic field, and a spacer layer mainly containing copper, sandwiched between the pinned layer and the free layer. A sense current flows through the pinned layer, the spacer layer, and the free layer substantially in a direction in which the layers are stacked. The free layer comprises at least one intermediate stack composed of a non-magnetic layer mainly containing copper, and a first cobalt iron layers made of a cobalt iron alloy and disposed on boundaries on both sides of the non-magnetic layer, a nickel iron alloy layers disposed on boundaries on both sides of the intermediate stack, and a second cobalt iron layer made of a cobalt iron alloy and formed in contact with the spacer layer on a boundary, opposing the spacer layer, of a stack composed of the intermediate stack and the nickel iron alloy layer.

Disclosed is a bulletproof material having superior bulletproof performance and enhanced back-side deformation characteristics along with superior wearing sensation due to relatively light weight and soft texture. The bulletproof material according to the present invention includes a fibrous layer including a carbon fiber network at a back side or near a back side.

A semiconductor device includes a semiconductor base body having an n⁺-type semiconductor layer and an n⁻-type semiconductor layer p⁺-type diffusion regions selectively formed on a surface of the n⁻-type semiconductor layer, and a barrier metal layer formed on a surface of the n⁻-type semiconductor layer and surfaces of p⁺-type diffusion regions. A Schottky junction is between the barrier metal layer and the n⁻-type semiconductor layer. An ohmic junction is between the barrier metal layer and the p⁺-type diffusion regions. Platinum is diffused into the semiconductor base body such that a concentration of platinum becomes maximum in a surface of the n⁻-type semiconductor layer.

A circuit having: an input matching network; a transistor coupled to an output of the input matching network; and wherein the input matching network has a first input impedance when such input matching network is fed with an input signal having a relatively low power level and wherein the input matching network has an input impedance different from the first input impedance when such input matching network is fed with an input signal having a relatively high power level.

The soft magnetic thin film has high saturation magnetic flux density and superior soft magnetic characteristics, and it can be suitably used as a magnetic film of a magnetic head of a magnetic disk drive unit. The soft magnetic thin film, which is made of an alloy including two or three elements selected from a group consisting of Fe, Co and Ni, is formed by an electrolytic plating process, and internal stress of the plated film is 400 MPa or more.

A free layer of an MR element incorporates a first layer, a second layer, a third layer, a fourth layer, a fifth layer and a sixth layer that are stacked in this order on a nonmagnetic conductive layer. The absolute value of magnetostriction constant of the free layer is 1×10⁻⁶ or smaller. The coercivity of the free layer is 20×79.6 A/m or smaller. The first layer is made of an alloy containing ‘a’ atomic percent cobalt and (100−a) atomic percent iron wherein ‘a’ falls within a range of 20 to 50 inclusive. The second layer is made of an alloy containing ‘b’ atomic percent cobalt and (100−b) atomic percent iron wherein ‘b’ falls within a range of 70 to 90 inclusive. In addition, oxidation treatment is given to a surface of the second layer farther from the first layer.