Provided are a high-power overload 1KPa
silicon micropressure sensor
chip and a manufacturing method. The high-power overload 1KPa
silicon micropressure sensor
chip is characterized by being of a beam-single-island double-sided double-piece
micro structure. A U-shaped
pressure sensitive resistor is arranged on an
I beam in the front side of an upper
chip body, an
aluminum electrode lead and a lead
welding pad are arranged at the periphery of a shallow groove, a residue membrane is connected with a central square support on the back side of the upper chip body at the portion opposite to the shallow groove to form a single
hard core-shaped sensitive membrane, a
peripheral sealing face and an
overpressure stopping groove are arranged on the front side of a lower chip body, a pressure tap through hole is formed in the center of the front side of the lower chip body, the upper chip body and the lower chip body are sealed by rubber and are divided in a scribing mode to form the single micropressure sensor chip. An MEMS technique is utilized to manufacture the
pressure sensitive resistor and the
I beam structure, a KOH wet method is used for
etching and manufacturing the single
hard core-shaped sensitive membrane, and the KOH wet method is further used for
etching the structure of the lower chip body. The high-power overload 1KPa
silicon micropressure sensor chip has the advantages that due to the
stress concentration effect of a beam structure, the
pressure sensitive resistor can obtain the largest strain; the flexibility for acquiring a micropressure range can reach to 20mV / 1KPa (1mA excitation); the
linearity reaches to 0.05%FS; the
overpressure stopping groove achieves 50-time
overpressure resistance protection in 1KPa
pressure measurement;
batch production of wafers is achieved.