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Soft support bridge type silicon micro-piezoelectric ultrasonic transducer chip and prepration method thereof

A technology of ultrasonic transducers and soft support bridges, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, zero of piezoelectric devices or electrostrictive devices Parts and other directions can solve the problem of low sensitivity of ultrasonic transducers

Inactive Publication Date: 2010-02-10
INST OF ACOUSTICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the vibrating membrane of the silicon micro piezoelectric ultrasonic transducer is fixed on four sides, so when the ultrasonic transducer vibrates, the sensitivity of the ultrasonic transducer is relatively low due to the small strain of the piezoelectric layer.

Method used

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  • Soft support bridge type silicon micro-piezoelectric ultrasonic transducer chip and prepration method thereof
  • Soft support bridge type silicon micro-piezoelectric ultrasonic transducer chip and prepration method thereof
  • Soft support bridge type silicon micro-piezoelectric ultrasonic transducer chip and prepration method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0092] Embodiment 1, using the preparation method of the present invention to prepare a novel piezoelectric ultrasonic transducer chip, the steps are as follows:

[0093] 1) Clean the silicon substrate 1

[0094] Cleaning the silicon substrate 1 with an acid cleaning solution and an alkaline cleaning solution respectively, and then rinsing it with deionized water;

[0095] 2) Formation of the B diffusion barrier by thermal oxidation

[0096] On the silicon substrate 1, use a thermal oxidation furnace to oxidize an oxide layer with a thickness of 1 μm, and remove the oxide layer on the front side, so that an oxide film layer with a thickness of 1 μm is formed on the back side of the substrate 1;

[0097] 3) Boron diffusion

[0098] Carry out boron diffusion on the silicon substrate 1 in a diffusion furnace, and then perform oxidation treatment after the diffusion, and form B-silicate glass on the surface of the silicon substrate 1, and use buffered HF to remove the B-silicon ...

Embodiment 2

[0118] Embodiment 2, using the preparation method of the present invention to prepare a novel piezoelectric ultrasonic transducer chip, the steps are as follows:

[0119] 1) Clean the SOI substrate

[0120] Clean the SOI substrate with acid cleaning solution and alkaline cleaning solution respectively, and then rinse it with deionized water;

[0121] 2) Preparation of oxide layer

[0122] Oxidize the SOI substrate in an oxidation furnace to form a first oxide layer 3 with a thickness of 0.3 μm on the front of the substrate, and a second oxide layer 4 with a thickness of 0.3 μm on the back;

[0123] 3) Prepare the lower electrode 6

[0124] On the first oxide layer 3, use magnetron sputtering equipment to prepare a Ti layer with a thickness of 0.04 μm and a Pt layer with a thickness of 0.2 μm to form a lower electrode composite layer, and use patterning technology to form a lower electrode 6; complete the lower electrode 6 preparation;

[0125] 4) Preparation of piezoelectr...

Embodiment 3

[0140] Embodiment 3, using the preparation method of the present invention to prepare a novel piezoelectric ultrasonic transducer chip, the steps are as follows:

[0141] 1) Clean the SOI substrate

[0142] Clean the SOI substrate with acid cleaning solution and alkaline cleaning solution respectively, and then rinse it with deionized water;

[0143] 2) Preparation of oxide layer

[0144] Oxidize the SOI substrate in an oxidation furnace to form a first oxide layer 3 with a thickness of 0.3 μm on the front of the substrate, and a second oxide layer 4 with a thickness of 0.3 μm on the back;

[0145] 3) Prepare the lower electrode 6

[0146] On the first oxide layer 3, use magnetron sputtering equipment to prepare a Ti layer with a thickness of 0.04 μm and a Pt layer with a thickness of 0.2 μm to form a lower electrode composite layer, and use patterning technology to form a lower electrode 6; complete the lower electrode 6 preparation;

[0147] 4) Preparation of piezoelectric...

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Abstract

The invention relates to a soft support bridge type silicon micro-piezoelectric ultrasonic transducer chip which comprises a silicon substrate with a square conical hole which is small at the top andbig at the bottom in the center; a silicon layer and a first oxidation layer are sequentially covered on the front surface of the silicon substrate, and a second oxidation layer is covered on the backsurface; the corresponding silicon layer and the first oxidation layer above the square hole of the front surface of the silicon substrate constitute a square vibration membrane, one pair of oppositesides of the square vibration membrane respectively etch a vertical narrow slot, and the vertical projection of each narrow slot is positioned on the inner side of the hole edge above the front surface of the silicon substrate; a lower electrode, a piezoelectric membrane and an upper electrode are sequentially deposited on the square vibration membrane; a polyimide membrane is deposited on various parts on the front surface of the silicon substrate; and the square vibration membrane which is etched with the vertical narrow slots and the polyimide membrane commonly constitute a soft support anti-sound leakage bridge type vibration membrane. The anti-sound leakage bridge type structure is used on the vibration membrane of the transducer; in order to avoid sound leakage through the narrow slots, the soft polyimide membrane is deposited on the narrow slots, which has little effect on vibration of the vibration membrane and can still keep high sensitivity.

Description

technical field [0001] The invention relates to the field of silicon micro-piezoelectric ultrasonic transducers, in particular to a soft-support bridge-type silicon micro-piezoelectric ultrasonic transducer chip and a preparation method thereof. Background technique [0002] Silicon micro-ultrasonic transducers are mainly composed of piezoelectric and capacitive types. Silicon micro-piezoelectric ultrasonic transducers are composed of piezoelectric layers, vibrating membranes, and metal electrodes. Compared with silicon microcapacitor ultrasonic transducers, piezoelectric ultrasonic transducers have a simple structure and simple manufacturing process; and low impedance, they are suitable as transmitting transducers. At present, the vibrating membrane of the silicon micro piezoelectric ultrasonic transducer is fixed on four sides, so when the ultrasonic transducer vibrates, the sensitivity of the ultrasonic transducer is relatively low due to the small strain of the piezoelec...

Claims

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Application Information

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IPC IPC(8): H01L41/083H01L41/18H01L41/22H01L41/04B06B1/06H01L41/25
Inventor 李俊红汪承灏刘梦伟徐联
Owner INST OF ACOUSTICS CHINESE ACAD OF SCI
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