109results about How to "Improve electrical resistance" patented technology

The invention discloses a preparation method of a composite antistatic agent for a fiber fabric. The composite antistatic agent for the fiber fabric in the preparation method comprises the following components: a butanol phosphate ester antistatic agent, a terminal hydroxyl hyperbranched antistatic agent, a terminal carboxyl hyperbranched antistatic agent and a terminal quaternary ammonium salt hyperbranched antistatic agent; and the preparation method comprises the following steps: firstly, respectively preparing the butanol phosphate ester antistatic agent, the terminal hydroxyl hyperbranched antistatic agent, the terminal carboxyl hyperbranched antistatic agent and the terminal quaternary ammonium salt hyperbranched antistatic agent; and mixing the four antistatic agents to prepare the composite antistatic agent for the fiber fabric. The preparation method is simple and feasible; and the prepared antistatic agent has a good antistatic effect, good heat resistance and good acid and alkali resistance.

The invention discloses a multi-level optimization design method of a GIS / GIL basin-type insulator with high electrical resistance. The method comprises a preliminary design stage and a detailed design stage. In the preliminary design stage, the basic shape of the GIS / GIL basin-type insulator is constructed by adopting contour shape optimization, the shapes of a convex surface and a concave surface of a basin body are described by utilizing a two-dimensional contour function, dielectric functionally graded material distribution is considered to be introduced, dielectric property space distribution is adjusted by utilizing topological optimization to actively regulate and control electric field distribution, and a creeping electric field is further deeply homogenized; in the detailed designstage, according to a dielectric distribution topological optimization result, the optimized gradient insulation area is converted into a high dielectric area with a constant dielectric constant, thesizes of the high-voltage side metal accessory and the high dielectric area are finely adjusted, an optimal size parameter is found out by adopting a genetic algorithm or an ant colony algorithm so as to finish the design of the basin-type insulator for GIS / GIL. The design space can be fully expanded, depth suppression of a creeping electric field is achieved, and the purpose of increasing the breakdown voltage of the basin-type insulator is achieved.

The invention discloses a dielectric constant distribution optimization method of a functional gradient insulator for a GIS (Geographic Information System), which takes a supporting insulator for theGIS as an optimization model and takes a direction (z axis) from a high-voltage electrode of the insulator to a ground electrode as a direction (z axis) to carry out gradient distribution optimizationcalculation on a dielectric constant. For the purpose of surface electric field distribution homogenization of the insulator, the optimal gradient distribution of the dielectric constant of the insulator is obtained by adopting an iterative calculation method. Wherein the iteration variable of the iteration calculation is an adjustment coefficient k (z) and a dielectric constant r (z) of the insulator; wherein the iteration ending criterion is that the non-uniformity coefficient f of the surface electric field distribution of the insulator is smaller than a preset electric field non-uniformity coefficient f0. The method has important theoretical value and engineering significance for improving the operation stability of the GIS and the safety of the power system.

The invention discloses an anti-interference high-voltage metalized polypropylene film capacitor, which comprises a cover board (1), a housing (2) and a core body (3), wherein an annular bump (4) is formed in the inner wall of an opening of the cover board (1); an annular groove (5) is formed in the upper part of the housing (2); the annular bump (4) is arranged in the annular groove (5) and can longitudinally move in the annular groove (5); an elastic seal ring (6) is arranged between the inner wall of the lower part of the cover board (1) and the outer wall of the upper part of the housing (2); an elastic rubber ring (19) is fixedly connected between the annular bump (4) and the bottom part of the annular groove (5); a buffer layer (13) is arranged at the inner wall of the housing (2); a core body (3) is arranged in the housing (2); a positioning sleeve (14) is arranged at the bottom part of the core body (3); an elastic washer (17) registered in the middle part of the core body (3); and insulated heat-conducting oil (18) is sealed between the housing (2) and the core body (3). The capacitor is high in breakdown voltage, anti-interference, safe, stable and long in service lifetime.

A surface acoustic wave element, a surface acoustic wave device, a duplexer, and a method of making a surface acoustic wave element which significantly restrain characteristics from deteriorating are provided. The surface acoustic wave element in accordance with the present invention comprises a piezoelectric substrate, and an IDT electrode formed on the piezoelectric substrate, whereas the piezoelectric substrate has a volume resistivity of not less than 3.6×1010 Ω·cm and not more than 1.5×1014 Ω·cm. This surface acoustic wave element comprises the piezoelectric substrate having a low volume resistivity, whereas the volume resistivity is reduced to 1.5×1014 Ω·cm or less. Therefore, discharging is restrained from occurring between IDT electrodes, whereby characteristics are significantly kept from deteriorating. Also, since the volume resistivity of the piezoelectric substrate is not less than 3.6×1010 Ω·cm, the IDT electrodes are significantly prevented from short-circuiting with each other.

An IDT electrode comprises, in order from the piezoelectric body side, a first electrode layer having Mo as the main component, and a second electrode layer which is provided on the first electrode layer and which has Al as the main component thereof. The IDT electrode has a total film thickness of not more than 0.15[lambda], with the first electrode layer having a film thickness of at least 0.05[lambda] and the second electrode layer having a film thickness of at least 0.025[lambda].

A surface acoustic wave element, a surface acoustic wave device, a duplexer, and a method of making a surface acoustic wave element which significantly restrain characteristics from deteriorating are provided. The surface acoustic wave element in accordance with the present invention comprises a piezoelectric substrate, and an IDT electrode formed on the piezoelectric substrate, whereas the piezoelectric substrate has a volume resistivity of not less than 3.6×1010 Ω·cm and not more than 1.5×1014 Ω·cm. This surface acoustic wave element comprises the piezoelectric substrate having a low volume resistivity, whereas the volume resistivity is reduced to 1.5×1014 Ω·cm or less. Therefore, discharging is restrained from occurring between IDT electrodes, whereby characteristics are significantly kept from deteriorating. Also, since the volume resistivity of the piezoelectric substrate is not less than 3.6×1010 Ω·cm, the IDT electrodes are significantly prevented from short-circuiting with each other.