The invention discloses a preparation method of a PbSe
quantum dot near-
infrared light-emitting
diode. The preparation method comprises the following steps: adding OA, ODE and PbO
powder into a three-necked flask, then injecting
nitrogen into the three-necked flask, and thoroughly removing air; heating the three-necked flask until the PbO
powder completely disappears, and a
mixed solution becomescolorless; adding an Se-TOP solution containing Se
powder into the three-necked flask, and heating the three-necked flask to obtain PbSe QDs particles; adding methylbenzene into the three-necked flask, and immersing the three-necked flask in a room-temperature water bath to perform a complete
quenching reaction; precipitating and dispersing a PbSe QDs sample by using
methanol and ethane, purifyingthe PbSe QDs sample, then dispersing the purified PbSe QDs sample into
tetrachloroethylene; and injecting a PbSe QDs solution into a hollow hemisphere through an
injector, sealing the hollow hemisphere, and placing the hollow hemisphere containing the PbSe QDs solution on a GaN
chip. The near-
infrared light-emitting
diode prepared by the method has the characteristics of simplicity in manufacturing,
narrow band, small size and easiness in tuning.