Terahertz absorption switch from double-frequency band to wide-frequency band based on phase change principle
A broadband, terahertz technology, applied in the field of electromagnetic functional absorption materials, to achieve the effect of easy preparation and simple structure
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Embodiment 1
[0023] A dual-band to broadband terahertz absorption switch based on the principle of phase change, including a continuous metal mirror layer 2, a dielectric layer 1 and an artificial electromagnetic material structure layer 3, the dielectric layer 1 is made of polyimide, and its The thickness t=22 μm is on the order of microns. The metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are all aluminum, and the thickness t of the metal reflector layer 2 and the artificial electromagnetic material structure layer 3 is m =200nm; the dielectric layer 1 is located between the metal reflector layer 2 and the artificial electromagnetic material structure layer 3, and the artificial electromagnetic material layer 3 is a basic unit of periodically arranged metal / phase-change material micro-nano structures The basic unit is composed of a split ring resonator I4 and a split ring resonator II5, both the split ring resonator I4 and the split ring resonator ...
Embodiment 2
[0026] Compared with Example 1, the difference is only: the material of the dielectric layer 1 is silicon dioxide, the metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are copper,
Embodiment 3
[0028] Compared with Example 1, the only difference is that the material of the dielectric layer 1 is polyimide, and the metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are silver.
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