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Terahertz absorption switch from double-frequency band to wide-frequency band based on phase change principle

A broadband, terahertz technology, applied in the field of electromagnetic functional absorption materials, to achieve the effect of easy preparation and simple structure

Pending Publication Date: 2021-01-01
NORTHEAST GASOLINEEUM UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, most of the tunable modulations that have been reported focus on the modulation of the working frequency, and very few broadband modulations are realized at the expense of absorption efficiency. It is still tunable absorption to achieve broadband modulation under the premise of ensuring high absorption efficiency. However, high-efficiency dual-band to broadband absorbing switching devices in the terahertz band have not been found in the literature and patents based on metamaterial tunable absorbing devices.

Method used

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  • Terahertz absorption switch from double-frequency band to wide-frequency band based on phase change principle
  • Terahertz absorption switch from double-frequency band to wide-frequency band based on phase change principle
  • Terahertz absorption switch from double-frequency band to wide-frequency band based on phase change principle

Examples

Experimental program
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Effect test

Embodiment 1

[0023] A dual-band to broadband terahertz absorption switch based on the principle of phase change, including a continuous metal mirror layer 2, a dielectric layer 1 and an artificial electromagnetic material structure layer 3, the dielectric layer 1 is made of polyimide, and its The thickness t=22 μm is on the order of microns. The metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are all aluminum, and the thickness t of the metal reflector layer 2 and the artificial electromagnetic material structure layer 3 is m =200nm; the dielectric layer 1 is located between the metal reflector layer 2 and the artificial electromagnetic material structure layer 3, and the artificial electromagnetic material layer 3 is a basic unit of periodically arranged metal / phase-change material micro-nano structures The basic unit is composed of a split ring resonator I4 and a split ring resonator II5, both the split ring resonator I4 and the split ring resonator ...

Embodiment 2

[0026] Compared with Example 1, the difference is only: the material of the dielectric layer 1 is silicon dioxide, the metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are copper,

Embodiment 3

[0028] Compared with Example 1, the only difference is that the material of the dielectric layer 1 is polyimide, and the metal reflector layer 2 and the artificial electromagnetic material structure layer 3 are silver.

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Abstract

The invention provides a terahertz absorption switch from a double-frequency band to a wide-frequency band based on a phase change principle, which relates to the technical field of electromagnetic function absorption materials of terahertz frequency bands. The switch consists of a metal reflector layer, a dielectric layer and an artificial electromagnetic material structure layer to form an interlayer structure; the artificial electromagnetic material layer is composed of basic units of metal / phase-change material micro-nano structures which are arranged periodically, each basic unit is composed of a split ring resonator I and a split ring resonator II which are orthogonal to each other, and the split ring resonator I and the split ring resonator II are provided with a phase-change material block I and a phase-change material block II respectively. Compared with the prior art, the terahertz absorption switch device is suitable for a wider working spectrum modulation range: the absorption switch device based on the phase change principle can realize a terahertz absorption switch function from double frequency bands to wide frequency bands, and can be applied to temperature sensing;a high-efficiency absorption effect is achieved; the switch is widely applied to energy absorption; and the switch is small in size, simple in structure and easy to prepare.

Description

Technical field: [0001] The present invention relates to the technical field of electromagnetic function absorbing materials in the terahertz frequency band, in particular to controlling the switch control of absorbing materials for absorbing characteristics in different frequency bands, and realizing the dual-band to broadband terahertz absorbing switching function through temperature control, and specifically relates to phase-based Dual-band to broadband terahertz absorbing switch with variable principle. Background technique: [0002] Terahertz (THz) waves generally refer to electromagnetic waves with a frequency in the range of 0.1-10 THz, and its wave band is between millimeter waves and infrared waves. Terahertz waves have many superior properties, and have important research value and application prospects in the fields of security detection, medical imaging and communication technology. However, due to the weak interaction between most conventional natural materials...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/17H01P1/10H01Q17/00H01Q15/00
CPCG02F1/174H01P1/10H01Q17/008H01Q15/0086
Inventor 吕婷婷刘东明韩建付天舒高宇飞
Owner NORTHEAST GASOLINEEUM UNIV
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