7475 results about "Quantum mechanics" patented technology

Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g. <500° C.) relative to prior art techniques. The availability of a bias plasma power adjustment further enables adjustment of conformality of the formed polysilicon layer. When dopants are included in the high density plasma, they may be incorporated into the polysilicon layer in such a way that they do not require a separate activation step.

A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region. A layer of material of a desired thickness is deposited on the workpiece by: (a) applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region, and (b) applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region.

The present invention relates to detection of inorganic and biologic structures and / or disruption and / or augmentation functions of biologic structures using resonant acoustic and / or resonant acousto-EM energy.

There is elucidated a device (10) comprising first and second magnetic cores (30, 40; 30a, 30b, 30c, 40a, 40b, 40c) forming a magnetic circuit. The circuit includes a first set of electrical windings (300, 310) for magnetically coupling a first electrical signal through the device (10) via a first magnetic path (350) in the circuit. The circuit includes a second set of electrical windings (400, 410) for magnetically coupling a second electrical signal through the device (10) via a second magnetic path (450) in the circuit. The paths (350, 450) are partially spatially intersecting. The sets of windings (300, 310, 400, 410) are configured so that: (a) the first set of windings (300, 310) is sensitive to magnetic flux in the first magnetic path (350), and insensitive to magnetic flux in the second magnetic path (450); and (b) the second set of windings (400, 410) is sensitive to magnetic flux in the second magnetic path (450), and insensitive to magnetic flux in the first magnetic path (350). The first and second cores (30, 40; 30a, 30b, 30c, 40a, 40b, 40c) enable relative motion (50) there between whilst coupling the signals through the circuit. The device (10) is beneficially employed in a medical system (800).

A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE—TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at least one element selected from the group consisting of Gd, Tb, Dy, Ho, Er, Tm, and Yb. The RE and TM have respective sub-network moments such that the absolute magnitude of the RE sub-network moment is greater than the absolute magnitude of the TM sub-network moment. An additional layer of magnetic material may be used in combination with the tunnel barrier and the RE—TM alloy layer to form a magnetic tunnel junction. Still other layers of tunnel barrier and magnetic material may be used in combination with the foregoing to form a flux-closed double tunnel junction device.

A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.

A shielding method and apparatus for an antenna disposed on an elongated support adapted for disposal within a borehole. The shield providing predetermined attenuation of one or more electromagnetic energy field components as the field components interact with the shield. The shield composed of a flexible strip or cylindrical body and respectively comprising a transverse conductive element or a transverse slot therein. The shields being adapted to cover an antenna mounted on the support. The shields being compatible for use in conjunction with saddle, tilted coils or multi-layered tri-axial coils to produce a pure transverse magnetic dipole electromagnetic field. The shields are also used in methods for shielding an antenna disposed on a support to provide predetermined attenuation of an electromagnetic field component as the field components interact with the shield.

Freestanding particles comprising a plurality of segments, wherein the particle length is from 20 nm to 50 μm and the particle width is form 5 nm to 50 μm.