The invention provides a 3-5[mu]m
infrared band
avalanche photodiode detector (APD) and a production method thereof. The
infrared band APD comprises an antireflective film layer, a P+ type InSb
electrode contact layer, an N type InSb layer, a P type epitaxial Si layer and an N+ type Si layer which are stacked from top to bottom, wherein the N type InSb layer is taken as an
absorption layer, the Ptype epitaxial Si layer is taken as a multiplication layer, and the N type InSb layer and the P type epitaxial Si layer are an N type InSb layer and a P type epitaxial Si layer in an InSb / Si bonded
wafer respectively. Therefore, absorption of InSb on
infrared band lights is high, difference between
electron ionization rate and hole
ionization rate of an epitaxial Si material is relatively large, an excess
noise factor of the epitaxial Si material is small, and multiplication performance with lower
noise can be obtained; compared with the circumstance that the multiplication layer is InSb,
noise of an InSb / Si APD device can be lowered, responsibility of an APD
detector is improved, and high-speed and low-noise photoelectric detection effect can be realized by virtue of combination of the Ntype InSb layer as a relatively narrow
absorption layer and the P type epitaxial Si layer as a narrow multiplication layer; meanwhile, the InSb / Si bonding
wafer is used, so that thermal mismatch witha Si reading circuit is reduced.