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SiC-based tungsten disulfide ultraviolet-visible photoelectric detector and preparation method and application thereof

A photodetector, tungsten disulfide technology, applied in the field of ultraviolet-visible detection, can solve the problems of reducing the photosensitive area of ​​materials, prolonging the transmission distance of photogenerated carriers, reducing device sensitivity, specific detection rate and response time, etc., to achieve effective Conducive to commercial promotion, enhancing the performance of photoelectric detection, and promoting the effect of application development

Active Publication Date: 2021-07-09
ZHEJIANG XINKE SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, W 2 Most photodetectors are still based on SiO 2 / Si substrate and top metal-semiconductor contact, which greatly limits the further improvement of its electrical and optoelectronic properties
At the same time, most of the previous heterojunction stacks are WS 2 Combined with other two-dimensional materials, Si, GaAs, etc., these devices generally only use the conductivity and light absorption of another component, and do not achieve the effect of multifunctional regulation of optoelectronic properties
Most importantly, devices fabricated on materials with photolithographic patterns are prone to problems such as Fermi level pinning at the metal-semiconductor interface, resulting in large dark current, low open-circuit current density, and large noise The equivalent power also reduces the photosensitive area of ​​the material and prolongs the transmission distance of photogenerated carriers, thereby reducing the sensitivity, specific detectivity and response time of the device

Method used

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  • SiC-based tungsten disulfide ultraviolet-visible photoelectric detector and preparation method and application thereof
  • SiC-based tungsten disulfide ultraviolet-visible photoelectric detector and preparation method and application thereof

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Experimental program
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Embodiment 1

[0036] 1. Preparation:

[0037] (1) cleaning n - SiC(11μm) / n + SiC (360 μm) substrate. Ultrasonic the substrate with acetone, isopropanol, and deionized water for 20 minutes; then pass in oxygen with a flow rate of 50 sccm, and the power of the plasma is 100 W, and generate ozone for cleaning for 5 minutes;

[0038] (2) According to 49% hydrofluoric acid (HF) aqueous solution: 40% ammonium fluoride (NH 4 F) Aqueous solution = 1:6 (volume ratio) mixed to configure a buffered oxide etchant (BOE) solution. Washed n from step 1 - SiC(11μm) / n + Put the SiC (360 μm) substrate into the buffered oxide etching solution (BOE) solution for 4 minutes to etch the oxide on the surface of the SiC substrate;

[0039] (3) Use electron beam evaporation equipment to evaporate the back electrode Ni-Ag to the substrate n + SiC (360μm) surface, and then spin-coated as a positive photoresist of the German ALLRESISTARP-5350 model on n - On the SiC (11μm) surface, set the speed of the homogeni...

Embodiment 2

[0046] The difference from embodiment 1 is that: the back electrode is Ti-Au; the symmetrical electrode is Au.

Embodiment 3

[0048] The difference from Example 1 is that: the back electrode is Cr—Au.

[0049] The present invention combines WS for the first time 2 n transferred to the evaporated symmetric electrode - SiC(11μm) / n + On SiC (360μm) substrates, the Fermi level pinning effect at the metal-semiconductor interface is weakened, and SiC and WS are synergistically exerted 2 Both UV-Vis absorption properties. Realized highly sensitive ultraviolet-visible detection function under 405nm laser irradiation (photosensitivity up to 60A / W, specific detection rate up to 4.94×10 11 Jones, external quantum efficiency 238%). The SiC-based tungsten disulfide ultraviolet photodetector of the present invention has a larger optical switch ratio (10 4 ), fast photoresponse (20~40ms), high sensitivity (R up to 60A / W, specific detection rate up to 5×10 11 Jones, with an external quantum efficiency of 238%), and has a bottom-gate regulated WS 2 specialty.

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Abstract

The invention belongs to the technical field of ultraviolet-visible detection, and discloses a SiC-based tungsten disulfide ultraviolet-visible photoelectric detector and a preparation method and application thereof. The structure of the detector is a back electrode / n + SiC (360 [mu]m) / n-SiC (11 [mu]m) / symmetric electrode / WS2 nanosheet. The preparation method comprises the following steps: preparing a micron-sized irregular WS2 nanosheet on a SiO2 / Si substrate through mechanical stripping; transferring WS2 to the SiC substrate on which symmetrical electrodes are deposited through a photoetching evaporation process through a PVA dry method transfer process; and finally, putting the SiC substrate attached with the WS2 / PVA film into deionized water or dimethyl sulfoxide at the temperature of 50-60 DEG C to be heated so that the PVA film can be dissolved; and performing annealing at the temperature of 100-250 DEG C in a protective atmosphere to obtain the detector. The performance of the WS2 detector is improved, application and development of SiC-based two-dimensional material functional devices are promoted, and commercialized popularization is facilitated.

Description

technical field [0001] The invention belongs to the technical field of ultraviolet-visible detection, and more specifically relates to a SiC-based tungsten disulfide ultraviolet-visible photodetector and its preparation method and application. Background technique [0002] Photoelectric detection technology is one of the many technologies that affect modern human life. Optoelectronic devices with high sensitivity, low noise, fast response and wide-spectrum detection are urgent requirements for enriching and facilitating people's daily life; SiC is the third-generation wide bandgap semiconductor. , has the advantages of high thermal conductivity, high breakdown field strength, high saturation electron migration rate, and good UV-Vis detection. In the dark, SiC can act as an insulator as the dielectric layer of the device; under suitable light, SiC can act as a semiconductor as the epitaxial photosensitive layer of the device. However, at present, SiC-based photodetectors are...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/101H01L31/113H01L31/0224H01L31/18
CPCH01L31/1013H01L31/1136H01L31/022408H01L31/18Y02P70/50
Inventor 李京波张帅高伟张峰岳倩郑涛
Owner ZHEJIANG XINKE SEMICON CO LTD
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