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A kind of preparation method of bismuth oxygen sulfur two-dimensional material and photodetector

A photodetector, two-dimensional material technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of high reaction temperature, poor chemical stability and electron mobility, harsh preparation conditions, etc., and achieve good application prospects, The effect of good photodetection performance

Active Publication Date: 2021-03-09
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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Problems solved by technology

[0004] However, at the same time, these two-dimensional materials still have many disadvantages: unsuitable band gap, poor chemical stability and electron mobility, so it is necessary to seek other new two-dimensional materials to obtain better performance and devices stability
There have been reports on the preparation of bismuth oxygen sulfur two-dimensional materials and their photodetectors by chemical vapor deposition, and the purity and crystallinity of the two-dimensional materials are good, but the preparation conditions are harsh and the reaction temperature is high
Compared with other synthetic methods, the hydrothermal (solvothermal) method has mild reaction conditions and simple operation, and it is hoped to obtain layered semiconductor materials with high purity, uniform phase and controllable morphology; however, conventional bismuth nitrate pentahydrate is used as bismuth source Prepared Bi 2 o 2 S material, there are shortcomings such as too small lateral dimension and too large thickness

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  • A kind of preparation method of bismuth oxygen sulfur two-dimensional material and photodetector
  • A kind of preparation method of bismuth oxygen sulfur two-dimensional material and photodetector
  • A kind of preparation method of bismuth oxygen sulfur two-dimensional material and photodetector

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preparation example Construction

[0026] The invention discloses a bismuth oxysulfide (Bi 2 o 2 S) the preparation method of two-dimensional material, comprises the steps:

[0027] Step 1: Disperse thiourea in deionized water, stir magnetically until completely dissolved, then add ammonium bismuth citrate;

[0028] Step 2: Stir the solution in step 1 evenly, then add potassium hydroxide at a concentration of 0.2 to 4.0 mol / L, and stir at room temperature for 1 to 3 hours;

[0029] Step 3: Transfer the stirred mixed solution to a high-temperature-resistant p-polyphenylene (PPL) reactor, and keep it warm at 25 to 220°C for 3 to 48 hours; Step 3 uses a one-step hydrothermal method for the preparation of materials ;

[0030] Step 4: Wash the product alternately with two solvents of deionized water or absolute ethanol, and centrifuge at a speed of 3000 to 10000 rpm for 3 to 8 minutes, and alternately wash 2 to 6 times), thereby preparing Bi 2 o 2 S two-dimensional material;

[0031] As a preferred embodiment,...

Embodiment 1

[0039] Example 1: 12 mmol (5.821 g) of bismuth nitrate pentahydrate was weighed and dissolved in 50 ml of deionized water, and magnetically stirred at room temperature until uniformly mixed. Then add 6mmol (0.457g) of thiourea, and continue to stir until the solution is evenly mixed. Then add a certain concentration of KOH, continue to stir until the solution is evenly mixed, then transfer the above solution to the lining of a 100ml reactor, add deionized water to adjust the solution to 60% of the dissolved volume of the reactor, and finally put the reactor into oven. After the experiment, the obtained precipitate was alternately centrifuged with absolute ethanol and deionized water for 6 times, and centrifuged at 4500 rpm for 5 minutes. After repeated 6 times of cleaning, it was dried in an oven and ground into powder. It can be found that using bismuth nitrate pentahydrate as bismuth source, the prepared Bi 2 o 2 The morphology of the S product is long-sided, but the late...

Embodiment 2

[0040] Example 2: 6 mmol (0.457 g) of thiourea was weighed and dissolved in 50 ml of deionized water, and magnetically stirred at room temperature until uniformly mixed. Then add 12mmol (5.426g) of ammonium bismuth citrate, and continue to stir until the solution is evenly mixed. Then add a certain concentration of KOH, continue to stir until the solution is evenly mixed, then transfer the above solution to the lining of a 100ml reactor, add deionized water to adjust the solution to 60% of the dissolved volume of the reactor, and finally put the reactor into oven. After the experiment, the obtained precipitate was alternately centrifuged with absolute ethanol and deionized water for 6 times, and centrifuged at 4500 rpm for 5 minutes. After repeated 6 times of cleaning, it was dried in an oven and ground into powder. figure 1 It is the XRD pattern that the embodiment of the present invention provides. It can be found that when bismuth ammonium citrate is used as the bismuth s...

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Abstract

The invention provides a preparation method of a bismuth oxygen sulfur two-dimensional material and a photoelectric detector. The preparation method includes step 1: dispersing thiourea in deionized water, stirring magnetically until it is completely dissolved, and then adding ammonium bismuth citrate; step 2 : Stir the solution in step 1 evenly, add potassium hydroxide at a concentration of 0.2 to 4.0 mol / L, and stir at room temperature for 1 to 3 h; step 3: transfer the stirred mixed solution to a high temperature resistant parasite In a polyphenylene reactor, keep warm at 25 to 220°C for 3 to 48 h; Step 4: Wash the product alternately with deionized water or absolute ethanol for 2 to 6 times to prepare Bi 2 o 2 S Two-dimensional materials. The beneficial effect of the present invention is: Bi prepared by the present invention 2 o 2 S two-dimensional material has good photoelectric properties, and the prepared photodetector has the characteristics of high photo-dark current ratio and good cycle stability.

Description

technical field [0001] The invention relates to a preparation process of a two-dimensional material, in particular to a preparation method of a bismuth oxygen sulfur two-dimensional material and a photoelectric detector. Background technique [0002] In today's world, materials, as one of the pillars of social development, play an irreplaceable role in the development of economy, technology, energy and information. With the continuous improvement of the precision of integrated circuits, the development of devices tends to be miniaturized, highly integrated, high storage density, fast transmission, large capacity and intelligent control, so the requirements for the performance and size of materials are becoming more and more stringent. Two-dimensional materials originated in the 1980s and have developed rapidly in recent years, becoming one of the hottest research fields. Two-dimensional materials mean that electron transport is limited to a two-dimensional plane, and electr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/101H01L31/108H01L31/18H01L21/02
CPCY02P70/50
Inventor 汪桂根李梦秋
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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