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Perovskite nanowire array photoelectric detector and preparation method thereof

A nanowire array, photodetector technology, applied in nanotechnology, photovoltaic power generation, nanotechnology and other directions, can solve the problems of perovskite materials such as fear of water, degradation of stability and performance, etc.

Pending Publication Date: 2017-09-15
湖南纳昇电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although perovskite is regarded as a promising next-generation solar cell material, it has a serious shortcoming that needs to be overcome: perovskite materials are afraid of water, and their stability and performance will decrease rapidly in humid environments

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  • Perovskite nanowire array photoelectric detector and preparation method thereof
  • Perovskite nanowire array photoelectric detector and preparation method thereof
  • Perovskite nanowire array photoelectric detector and preparation method thereof

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Embodiment 1

[0039] An embodiment of the perovskite nanowire array photodetector and its preparation method of the present invention. The structure of the perovskite nanowire array photodetector is as follows: figure 1 shown. Depend on figure 1 It can be seen that it mainly includes a substrate 1, an organic-inorganic hybrid perovskite nanowire array 2 compounded on the upper surface of the substrate 1, and a 4,4'-cyclohexyl disulfide covering the organic-inorganic hybrid perovskite nanowire array 2. [N,N-bis(4-methylphenyl)aniline] protective layer 3 and composite on 4,4'-cyclohexyl bis[N,N-bis(4-methylphenyl)aniline] protective layer 3 Surface electrodes 4. Wherein, the substrate 1 is a glass sheet with a surface roughness (Ra) of 8nm, and a 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] protective layer 3 with a thickness of 45nm.

[0040] The preparation method of the perovskite nanowire array photodetector comprises the following steps:

[0041] (1) Substrate 1 was ultrasonic...

Embodiment 2

[0050] An embodiment of the perovskite nanowire array photodetector and its preparation method of the present invention. The structure of the perovskite nanowire array photodetector is as follows: figure 1 shown. Depend on figure 1It can be seen that it mainly includes a substrate 1, an organic-inorganic hybrid perovskite nanowire array 2 compounded on the upper surface of the substrate 1, and a 4,4'-cyclohexyl disulfide covering the organic-inorganic hybrid perovskite nanowire array 2. [N,N-bis(4-methylphenyl)aniline] protective layer 3 and composite on 4,4'-cyclohexyl bis[N,N-bis(4-methylphenyl)aniline] protective layer 3 Surface electrodes 4. Wherein, the substrate 1 is a quartz plate with a surface roughness (Ra) of 10 nm, and a 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] protective layer 3 with a thickness of 50 nm.

[0051] The preparation method of the perovskite nanowire array photodetector comprises the following steps:

[0052] (1) Substrate 1 was ultraso...

Embodiment 3

[0060] An embodiment of the perovskite nanowire array photodetector and its preparation method of the present invention. The structure of the perovskite nanowire array photodetector is as follows: figure 1 shown. Depend on figure 1 It can be seen that it mainly includes a substrate 1, an organic-inorganic hybrid perovskite nanowire array 2 compounded on the upper surface of the substrate 1, and a 4,4'-cyclohexyl disulfide covering the organic-inorganic hybrid perovskite nanowire array 2. [N,N-bis(4-methylphenyl)aniline] protective layer 3 and composite on 4,4'-cyclohexyl bis[N,N-bis(4-methylphenyl)aniline] protective layer 3 Surface electrodes 4. Among them, substrate 1 is polyethylene terephthalate (PET), its surface roughness (Ra) is 9nm, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl) Aniline] protective layer 3 had a thickness of 30 nm.

[0061] The preparation method of the perovskite nanowire array photodetector comprises the following steps:

[0062] (1) Substrate 1 wa...

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Abstract

The present invention discloses a perovskite nanowire array photoelectric detector and a preparation method thereof. The photoelectric detector comprises a substrate (1), an organic-inorganic hybrid perovskite nanowire array (2) composited at the upper surface of the substrate (1) and an electrode (4) arranged at the upper portion of the organic-inorganic hybrid perovskite nanowire array (2), a 4, 4'-cyclohexyl-2[N, N-2(4-methylphenyl)aniline] protective layer (3) is composited at the upper surface of the substrate (1), the upper portion of the organic-inorganic hybrid perovskite nanowire array (2) is coated with the 4, 4'-cyclohexyl-2[N, N-2(4-methylphenyl)aniline] protective layer (3), and the electrode (4) is arranged at the upper surface of the 4, 4'-cyclohexyl-2[N, N-2(4-methylphenyl)aniline] protective layer (3). The perovskite nanowire array photoelectric detector is good in photoelectric detection performance, stable in performance in the air and low in cost.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a perovskite nanowire array photodetector and a preparation method thereof. Background technique [0002] Photodetectors have the function of converting optical signals into electrical signals. They are basic devices supporting the field of optical information technology and have a wide range of applications in optical communication, sensing, security, and biosensing. Currently commercialized photodetectors are mainly based on inorganic semiconductor materials such as Si, GaN, and InGaAs. This type of detector has good performance in terms of response speed, sensitivity and stability, but at the same time, its preparation process is complicated and the cost is high. Therefore, the development of photodetectors with good performance and low cost is of great significance to the development of the field of optical information. [0003] With the rapid improvement of ...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48B82Y30/00
CPCB82Y30/00H10K85/00H10K85/30H10K30/80H10K30/00Y02E10/549
Inventor 童思超王琴尹莹
Owner 湖南纳昇电子科技有限公司
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