Method for realizing infrared photoelectric detection by regulating and controlling metal/semiconductor Schottky junction through pyroelectric effect of polar semiconductor

Abstract

The invention relates to a method for realizing infrared photoelectric detection by regulating and controlling a metal / semiconductor Schottky junction through a pyroelectric effect of a polar semiconductor. A metal electrode is prepared on the surface of a polar semiconductor material, a Schottky junction is formed on the surface of a semiconductor, ultraviolet light is utilized to excite free electrons to improve infrared light absorption of the semiconductor, infrared light is utilized to excite a pyroelectric field of the polar semiconductor, and the pyroelectric field is utilized to regulate and control the junction height of the Schottky junction of a heterogeneous interface to regulate and control a light current. Therefore, infrared light detection is realized. The method is easy to operate and low in equipment requirement, large-area operation of the semiconductor material can be achieved, surface modification of the semiconductor material cannot reduce the light responsivity of the semiconductor material, and the method can be suitable for various semiconductor materials with polarity. According to the invention, the regulation and control effect is obvious, the responsivity of the device reaches 13mA / W, the response speed reaches 0.5 s, and the performance of the device has good stability and repeatability.

Description

technical field [0001] The invention proposes a method for regulating the metal / semiconductor Schottky junction through the pyroelectric effect of the polar semiconductor to realize infrared photoelectric detection. Background technique [0002] The pyroelectric detector is prepared according to the pyroelectric effect. In order to maintain the neutral state of the surface of some materials, the surface of the material will absorb a certain charge. When the surface of the material is subjected to thermal radiation and the temperature changes, the electric dipole moment of these materials will also change accordingly. In order to maintain its electrically neutral state, the surface of the pyroelectric material will release charges, and the pyroelectric voltage is This phenomenon is called the pyroelectric effect. Generally speaking, the common pyroelectric materials are mostly ferroelectric materials, such as PbZrTiO 3 , LiTaO 3 , or BaSrTiO 3 . However, these material...

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Problems solved by technology

[0003] In 1999, JudithA.Ruffner and others prepared an uncooled thin-film pyroelectric infrared detector with airgel thermal isolation, but the structure of this device is complex

In 2002, Chong et al. designed four SiN / SiO 2 Pyroelectric sensor array composed of pyroelectric sensing elements, but this method has complex device structure and low responsivity

In 2012, Chun-Yi Hsieh et al. used ZnO / PZT to form a heterojunction, combined the photocurrent behavior in the ultraviolet range and the pyroelectric effect in the infrared range, and obtained a wide spectral response of the current, but this method device The structure is more complex and the responsiveness is lower

In 2017, Da Yuezhi provided a small pyroelectric infrared detection element that reliably detects multiple types of detection objects, but the device has a complex structure and low responsivity

In 2018, Hideki Fujiwara designed a new pyroelectric infrared detector, whose response sensitivity has a great relationship with the electrode structure, so the electrode structure is more complicated

In 2019, Ying Wang et al. used the pyroelectric effect of ZnO to enhance the transient photoresponse of Ag / ZnO. Although this method has high responsivity, the response wavelength is limited to the ultraviolet band.

This type of infrared detector requires a multi-layer structure, and the preparation of the device is relatively complicated, which is not suitable for large-scale applications, and the substrate material needs to have a high absorption rate for infrared light, and the material restrictions are large.

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