40results about How to "Control doping concentration" patented technology

The invention discloses a hydrothermal preparation method for a sulfur doping titanium dioxide photocatalyst with an anatase structure, comprising the following steps: 1)preparing a nano powder precursor solution by agitating and mixing 8-12ml butyl titanate, 55-65ml deionized water, 15-25ml absolute ethyl alcohol, 5-10ml trolamine and 0.38-4.56 gthiourea at a temperature of 10-40 DEG C; 2) preparing a nano powder in a hydrothermal condition by placing the nano powder precursor solution into a reaction kettle, rising temperature at a speed of 1-5 DEG C / min to 150-240 DEG C and keeping the temperature to perform the hydrothermal reaction, stopping heating after 2-5 hours, when the reaction kettle is naturally cooled to room temperature, taking out the reactants, washing with the deionized water and the absolute ethyl alcohol for 3-4 times, and finally drying the reactants in a vacuum drying oven at 50-80 DEG C. The invention is capable of synchronous achieving processes both of the preparation of TiO2 nano particle and sulfur doping, which makes the preparation technical line of the catalyst more reasonable, be suitable to product quantity control with low energy consumption.

The invention relates to a method for growth of a germanium nitrogen codoped silicon carbide single crystal material. A PVT method is adopted according to the method; in the germanium-doped silicon carbide single crystal growth process, nitrogen at a certain proportion is led into a growth atmosphere, argon is led in to serve as a carrier gas with the pressure controlled to be 700-850 mbar, argon flow is 15-30 sccm, and the nitrogen flow is 0.5-2 sccm; and the germanium nitrogen codoped silicon carbide single crystal is obtained. On the one hand, high-concentration germanium element doping is implemented, and on the other hand, by adjusting specific doping concentration of germanium and nitrogen, the goal of increasing silicon carbide crystal lattice fitness degree, reducing crystal stress and improving crystal quality is achieved. Application of the silicon carbide crystal material to visible light and infrared light wave bands is expanded.

The invention discloses a method for controlling N-type 4H-SiC homogenous epitaxial doping. The method includes steps of placing silicon carbide substrates into a reaction chamber; heating the reaction chamber in hydrogen stream; adding C<3>H<8> into the hydrogen stream after the temperature of the reaction chamber reaches 1400 DEG C; performing in-situ etching on the substrates for 10-30 minutes after the temperature of the reaction chamber reaches 1580 DEG C; keeping the temperature of the reaction chamber at the temperature of 1580 DEG C, keeping the pressure of the reaction chamber within the range of 300mbar-700mbar, adding SiH<4> at a flow rate of 15-24mL / min, C<3>H<8> at a flow rate of 5-10mL / min and N<2> at a flow rate of 2L / min into the hydrogen stream at a rate of 80L / min and growing epitaxial layers; cooling the silicon carbide substrates in the hydrogen stream after the epitaxial layers complete growing; filling argon into the reaction chamber until the pressure of the reaction chamber reaches the normal pressure. The method has the advantages that only the pressure of the reaction chamber is changed, operation is simple and convenient, and the manufactured silicon carbide epitaxial layers are doped uniformly, have smooth surfaces and can be used for manufacturing silicon carbide devices.

The invention provides a GaInP / GaAs / Ge / Ge four-junction solar cell, comprising a Ge substrate layer, wherein a first Ge sub cell, a first tunnel junction, a second Ge sub cell, a second tunnel junction, a GaAs sub cell, a third tunnel junction, a GaInP sub cell and a contact layer of (In) / GaAs or Ge are arranged on the Ge substrate in sequence. The invention also provides a preparation method for the GaInP / GaAs / Ge / Ge four-junction solar cell. The preparation method comprises the following steps: 1, the Ge substrate layer is provided; 2, the first Ge sub cell is grown on the surface of the Ge substrate layer; 3, the first tunnel junction is grown on the surface of the first Ge sub cell; 4, the second Ge sub cell is grown on the surface of the first tunnel junction; 5, the second tunnel junction is grown on the surface of the second Ge sub cell; 6, the GaAs sub cell is grown on the surface of the second tunnel junction; 7, the third tunnel junction is grown on the surface of the GaAs sub cell; 8, the GaInP sub cell is grown on the surface of the third tunnel junction; and 9, the contact layer is grown on the surface of the GaInP sub cell.

The invention discloses a shield gate MOSFET device with a uniformly doped channel and a processing technology, which are characterized in that on the basis of the existing shield gate MOSFET device,a heavily doped first conductive type polycrystalline silicon column region is formed in a groove etching heavily doped polycrystalline silicon filling mode, and then a first conductive type body region is formed in a rapid thermal annealing mode; by optimizing the doping concentration of the first conductive type body region, a mutation junction is formed between the first conductive type body region and the drift region, so that the threshold consistency of the device is improved, meanwhile, the problem that the first conductive type body region is excessively compensated by the drift regionis solved, the doping concentration of the body region is improved, and the possibility that a parasitic triode of the device is turned on is reduced; reliability of the device is improved.

The invention belongs to the technical field of a CIGS thin-film solar cell, and particularly discloses a preparation method of a CIGS absorbing layer film doped with alkaline metal elements. The preparation method comprises the steps of (1), firstly, preparing a silicon nitride barrier layer on a soda-lime glass substrate; (2), then depositing a back contact Mo layer on the substrate; (3), depositing a CIG metal prefabricated layer on the deposited back contact Mo layer doped with the alkaline metal elements; and (4), preparing the CIGS absorbing layer film doped with the alkaline metal elements. The preparation method has advantages of substrate material dependence reduction, controllable diffusion, simple and easy-realizing process, low roughness of the metal prefabricated layer, high adhesiveness, high element mixing uniformity, high crystallinity of the prepared film, and high band gap adjustability.

The invention provides a method for preparing an optical fiber quantum probe with controllable diamond particle doping concentration. The method comprises the following steps of: step 1, mixing a solution with a nano diamond particle aqueous solution containing NV color center; step 2, ultrasonically dissolving the prepared solution doped with the nano diamond particles containing NV color centerby a sol-gel method, sealing and standing, and fully hydrolyzing to form sol-gel; and step 3, uniformly coating the sol-gel prepared in the step 2) on the end surface of the optical fiber, holding theoptical fiber by a stepping motor, contacting the end surface of the optical fiber with the sol-gel for a period of time, pulling at a certain rate to form a hemispherical gel film with a certain thickness and a certain curvature on the end surface, and curing to obtain the prepared optical fiber quantum probe. The method can control the doping concentration of the nano diamond particles containing NV color center, and the mixing is uniform. In addition, the probe has the advantages of convenient manufacturing process and high repeatability, and can realize mass production.

The invention belongs to the field of novel energy source materials and devices, in particular relates to a preparation method of a semiconductor film solar cell and provides a CdS homojunction solar cell structure, wherein Cd2SnO4 serves as a transparent conducting layer, n type CdS serves as a window layer, Zn2SnO4 serves as a buffering layer material between the transparent conducting layer and the window layer, and p type CdS serves as an absorbing layer. On the basis of the CdS homojunction solar cell structure, a CdS solar cell is prepared by a dry process. Namely, the preparation method comprises the following steps of: performing radio-frequency sputtering on the borosilicate or aluminosilicate glass to form the transparent conducting layer Cd2SnO4; performing radio-frequency sputtering to form the buffering layer Zn2SnO4; performing radio-frequency sputtering to form the n type CdS serving as the window layer; depositing copper-doped CdS at room temperature through physical gas phase method and performing post treatment to form the p type CdS serving as the absorbing layer; or directly growing the p type copper-doped CdS serving as the absorbing layer at a certain temperature through the physical gas phase method; and depositing a metal electrode and connecting a lead. Through the structure and the process, sun light can be better collected and used; p type doping treatment can be effectively performed on the CdS; influences caused by lattice mismatch and interface state are eliminated; and then higher photoelectric conversion efficiency is achieved.

The invention discloses a high-catalytic activity probe material and a preparation method and application thereof. The high-catalytic activity probe material is rare-earth element co-coped high-catalytic activity SnO2 powder and is prepared from raw materials of tin chloride powder in 5-70 parts by weight and a rare-earth oxide in 1-10 parts by weight. The application is the application of the high-catalytic activity probe material in preparation of a supercapacitor negative electrode material. By co-doping of rare-earth elements in black tin dioxide and a surface of the black tin dioxide, a rare-earth salt solution is uniformly dissolved in a tin dioxide micronano structure; and by doping, the growth of a tin dioxide crystal can be effectively promoted, and a crystal phase interface is relatively good in bonding.

The invention discloses a single-matrix single-doping white light-emitting material and a preparation method and application thereof. The chemical composition expression formula of the material is Lu(1-x)DyxNbO4, wherein x is the mole percentage content of an active ion Dy3+ relative to a matrix rare earth ion Lu3+, and x is larger than or equal to 0.005 and smaller than or equal to 0.20. The white light-emitting material belongs to niobate and has preferable physical and chemical stability compared with other compounds. A matrix material LuNbO4 contains the rare earth ion Lu3+, so that Dy3+ ions are convenient to dope. By utilizing effective light-emitting of NbO4<3-> groups in a matrix, the crystallinity is high, and the light-emitting quality is good.

Aiming at the defects of high surface emissivity, great thermal radiation loss and the like of a current vanadium-titanium black porcelain coating, the invention provides a solar selective absorbing coating on a ceramic substrate surface and a preparation method thereof. The coating comprises three layers of a vanadium-titanium black porcelain absorbing layer, a silica ion barrier layer and an antimony-doped tin oxide infrared reflecting layer in sequence. The solar selective absorbing coating on the ceramic substrate surface and the preparation method thereof have the advantages that as glycol is used as a coordination stabilizer and a solvent, hydrolytic condensation of antimony ions can be effectively controlled, the antimony ions can be prevented from coagulating due to hydrolysis and thus the doping concentration of the antimony ions is effectively controlled so that the antimony-doped tin oxide infrared reflecting layer reflects infrared radiation between 2.5 microns and 25 microns and has the reflectivity as high as 80% to achieve the purpose of reducing the emissivity of the selective absorbing coating. The solar selective absorbing coating which has an absorptivity of more than 90% and an emissivity of less than 25% can be obtained, and has positive significance for resource recycling of wastes and effective thermal utilization of solar energy.

The invention discloses a solar selective absorption coating and a preparation method thereof. By preparing a spinel structure ceramic target material in advance and using a Ni target material to be subjected to radio frequency magnetron sputtering on a substrate, the Ni-doped CuCoMnOx spinel structure solar selective absorption coating is prepared. The coating can be applied in a high temperatureenvironment, the binding force between an absorption layer and the substrate can be effectively improved, the coating is prevented from peeling off, and in addition, the doping content of metal elements can be precisely controlled. The two adopted target materials are both connected with radio frequency sources, the two radio frequency sources can work simultaneously and can also work independently. The target distance, the sputtering power and the sputtering time of the two target materials can be separately adjusted as required. When the two target materials simultaneously work, atoms in the two target materials will be sputtered out at the same time, and accordingly, doping can be conducted in situ. The doping concentration is very conveniently controlled by adjusting the target distance and the sputtering power of the doping target.

The invention provides a preparation method of a nanometer silver / antimony doped tin oxide composite transparent conductive heat reflection coating. Ethylene glycol is adopted as a solvent and a coordination stabilizer in the preparation process of antimony doped tin oxide sol, hydrolysis and condensation of antimony ions can be effectively controlled, and therefore the doping concentration of the antimony ions is effectively controlled; in addition, when the antimony doped tin oxide sol and nanometer silver sol are mixed, nanometer silver will not be coagulated, and therefore effective doping of nanometer silver is achieved. The method specially comprises the following steps that the nanometer silver sol and the antimony doped tin oxide sol are prepared at first, then mixed sol is prepared, and finally, deposition is carried out on a substrate through a spraying technology to obtain the nanometer silver / antimony doped tin oxide composite transparent conductive heat reflection coating. The surface resistance of the coating prepared through the method reaches 20 or below, the infrared heat reflection rate reaches 80% or above, and the infrared reflection initial point can be adjusted from 2.5 micrometers to 1.5 micrometers so as to be applicable to different application occasions.

The invention provides a method for manufacturing amorphous silicon doped on the back surface of an HBC battery. The method comprises the following steps of: growing an intrinsic hydrogenated amorphous silicon layer on the back surface of an N-type polished silicon wafer; printing boron slurry on the hydrogenated amorphous silicon layer, and drying the silicon wafer; printing phosphorus slurry onthe hydrogenated amorphous silicon layer, and drying the silicon wafer; putting the printed silicon wafer into a laser for laser doping to obtain square resistance values required to be reached by a Pregion and an N region; plating a mask on the surface of a battery piece as a polishing barrier layer; and cutting the position between the P region and the N region by using laser, and removing themask in the middle. The method provided by the invention can ensure the uniformity and growth rate of back doped amorphous silicon.

The invention provides a GaInP / GaAs / InGaNAs / Ge four-junction solar cell, comprising a Si support substrate, wherein a first contact layer of Ge or GaInAs, a Ge sub cell, a first tunnel junction, an InGaNAs sub cell, a second tunnel junction, a GaAs sub cell, a third tunnel junction, a GaInP sub cell and a second contact layer of InGaNAs or GaAs are arranged on the surface of the Si support substrate in sequence. The invention also provides a preparation method of the GaInP / GaAs / InGaNAs / Ge four-junction solar cell. The preparation method comprises the following steps: 1, a GaAs substrate is provided; 2, the second contact layer, the GaInP sub cell, the third tunnel junction, the GaAs sub cell, the second tunnel junction, the InGaNAs sub cell, the first tunnel junction, the Ge sub cell and the first contact layer are grown on the surface of the GaAs substrate in sequence; 3, the Si support substrate is provided; 4, the Si support substrate is bonded to the surface of the first contact layer; and 5, the GaAs substrate is stripped from the second contact layer, so that the GaAs substrate is removed.

The invention discloses a device for regulating and controlling the thin film material growth through substrate electrification. The device is characterized in that on the basis of the existing CVD (chemical vapor deposition) reaction device, a substrate electrification system is added; the substrate electrification system comprises a conducting circuit, a metal pole plate, a plug and a power supply; the metal pole plate is positioned in a CVD reaction cavity; the plug and the power supply are positioned outside the CVD reaction cavity; the metal pole plate is connected with the plug and the power supply through the conducting circuit. By using the device, positive and negative static charges or current can be exerted on the conducting substrate; an insulation substrate is polarized, so that electrostatic charges can be controllably generated at the surface; the goal of regulating and controlling the electric potential, the adsorbability, the electron energy state and the catalytic activity of the freely grown substrate is achieved. By using device and the growth method, the monocrystal size, the uniformity, the doping concentration, the layer number, the interlayer stacking mode,the twist angle, the chirality, the cleanliness and the like can be conveniently controlled in the thin film material preparation process.

Luminescent layer of the device includes at least one organic main body material and at least one adulterant. Adulterant is 0.1ppm - 500ppm (mole) of main body material. The device can realizes modulations of light color or hue and luminous efficiency without influence on current and voltage characteristics of main body material. The device possesses better stability and luminescence. In the invention, the device is prepared through mixing doping method by using doping in advance and coating by vaporization with double sources. Comparing with prior art, the invention controls doping density of adulterant accurately. More over, evaporation rate of double sources can be controlled in procedure of coating by vaporization to adjust density of adulterant through more means. Thus, the invention is flexible.

The invention relates to a manufacturing process of a silicon heterojunction solar battery. The silicon heterojunction solar battery comprises a first electric silicon substrate, a first intrinsic silicon layer, a second intrinsic silicon layer, a second electric silicon layer and a first electric heavily-doping silicon layer, wherein the first intrinsic silicon layer and the second intrinsic silicon layer are respectively formed at two sides of the first electric silicon substrate and forms a heterojunction with the first electric silicon substrate; and the second electric silicon layer and the first electric heavily-doping silicon layer are respectively formed on the first intrinsic silicon layer and the second intrinsic silicon layer. According to the invention, the second electric silicon layer and the first electric heavily-doping silicon layer are formed in an ion implantation way so as to optimize the thicknesses and the doping qualities of the second electric silicon layer and the first electric heavily-doping silicon layer.

The invention discloses an MOS type device and a manufacturing method thereof. The MOS device comprises an epitaxial layer, a mesa above the epitaxial layer, and a well region which is arranged abovethe epitaxial layer and distributed at both sides of the mesa, wherein the well region is etched to acquire a trench region, a source region is acquired through epitaxial grow in the acquired trench region, a gate oxide layer and a gate electrode sequentially grow above the mesa, a source electrode is arranged above the well region, and a drain electrode is arranged below the epitaxial layer. TheMOS device is advantaged in that the well region and the source region are formed through the epitaxial process and the CMP process, the ion implantation process for preparing the well region and thesource region is not needed, crystal lattice damage caused by ion implantation can be reduced, doping concentration of the well region and the source region can be accurately controlled, and thereby length of channels is not restricted by photolithography accuracy.

The invention discloses a preparation method of a PEDOT:PSS (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)) based flexible ammonia sensor, which comprises the steps of preparing PEDOT:PSS into ink suitable for printing on an ordinary ink-jet printer, depositing an ammonia sensitive material layer on an interdigital electrode in an ink-jet printing manner, printing a ferric chloride aqueous solution on the ammonia sensitive material layer in an ink jet manner, and performing deposition to form a doping material to accomplish preparation of the ammonia sensor. The prepared ammonia sensor has better response to ammonia at different concentrations, is highly sensitive to the low-concentration ammonia and wide in detection range and has the characteristics of short response time, highstability and good gas selectivity; a lower detection limit of the ammonia reaches 1ppm; the sensor is suitable for highly sensitive detection of the ammonia at the room temperature; and the preparedammonia sensor is good in flexibility and low in working temperature, and can be combined with wearable equipment to be applied to the ammonia detection in a surrounding environment of a human body and detection of human body breathing gas so as to give an early warning for a human health condition.

The invention provides a GaInP / GaAs / Ge / Ge four-junction solar cell, comprising a Ge substrate layer, wherein a first Ge sub cell, a first tunnel junction, a second Ge sub cell, a second tunnel junction, a GaAs sub cell, a third tunnel junction, a GaInP sub cell and a contact layer of (In) / GaAs or Ge are arranged on the Ge substrate in sequence. The invention also provides a preparation method for the GaInP / GaAs / Ge / Ge four-junction solar cell. The preparation method comprises the following steps: 1, the Ge substrate layer is provided; 2, the first Ge sub cell is grown on the surface of the Ge substrate layer; 3, the first tunnel junction is grown on the surface of the first Ge sub cell; 4, the second Ge sub cell is grown on the surface of the first tunnel junction; 5, the second tunnel junction is grown on the surface of the second Ge sub cell; 6, the GaAs sub cell is grown on the surface of the second tunnel junction; 7, the third tunnel junction is grown on the surface of the GaAs sub cell; 8, the GaInP sub cell is grown on the surface of the third tunnel junction; and 9, the contact layer is grown on the surface of the GaInP sub cell.

The invention provides a method for making the back of an HBC cell doped with amorphous silicon, comprising: growing an intrinsic hydrogenated amorphous silicon layer on the back of an N-type polished silicon wafer; printing boron paste on the hydrogenated amorphous silicon layer, Drying; printing phosphorous paste on the hydrogenated amorphous silicon layer, drying; putting the printed silicon wafer into the laser for laser doping, to obtain the required square resistance of the P area and the N area; giving the surface of the cell A mask is plated as a polishing barrier; the position between the P region and the N region is cut with a laser, and the mask in the middle is removed. The method of the invention can ensure the uniformity and growth rate of the back doped amorphous silicon.

The invention provides a Zn in-situ doping P type hexagonal boron nitride film and a preparation method thereof, and belongs to the technical field of semiconductor material preparation and semiconductor doping. According to the method, a high-purity hBN target, a high-purity Zn target and a cleaned substrate are put into a magnetron sputtering growth chamber; a radio frequency magnetron double-target co-sputtering technology is used; Zn impurities are doped in situ in the hBN film growth process; after the growth completion, the film is subjected to in-situ annealing in the N2 atmosphere; thefilm is cooled to the chamber temperature under the N2 gas protection, so that the Zn in-situ doping P type hBN film is obtained on the substrate. The method is simple; the cost is low; safety and reliability are realized; the toxicity and harm do not exist; the doping concentration can be controlled through regulating the target distance and the sputtering power of the Zn target; the B atom lattice point position can be easily occupied by Zn in the hBN film and has the lower forming energy and smaller impurity activation energy as the substituting impurities, so that the Zn doping P type hBNfilm with lower resistivity can be obtained; the performance is stable.

A method for preparing an optical fiber quantum probe with controllable diamond particle doping concentration, comprising the following steps: step 1, mixing the solution with an aqueous solution of nano diamond particles containing NV color centers; step 2, by sol-gel method, Ultrasonically dissolve the solution doped with nano-diamond particles containing NV color centers, seal and let it stand until it is fully hydrolyzed to form a sol-gel; step 3, apply the sol-gel prepared in step 2) evenly on the The end face of the optical fiber is supported by a stepping motor, the end face of the optical fiber is in contact with the sol-gel and pulled at a certain rate after a certain period of time to form a hemispherical gel film with a certain thickness and a certain curvature on the end face, which is prepared after curing fiber optic quantum probe. The doping concentration of nano-diamond particles containing NV color centers can be controlled and mixed evenly. In addition, the manufacturing process of the probe is convenient, the repeatability is high, and mass production can be realized.

The invention provides a method for preparing amorphous silicon by ALD. The method comprises the following steps of: opening a furnace door of ALD equipment, putting a sample for preparing the amorphous silicon into a carrier, and vacuumizing the ALD equipment; enabling an equipment test leakage rate to be smaller than or equal to 5 mTorr, meanwhile, rising the temperature to 200-600 DEG C, and keeping the constant temperature for 5-20 min; and introducing a reaction source and nitrogen gas, and repeating the steps for several times to grow the amorphous silicon. According to the method, in-situ doping of low-temperature amorphous silicon is adopted, the problem of non-uniformity of an amorphous silicon coating film can be effectively solved through the method, meanwhile, the growth rate of amorphous silicon is high, and the method is suitable for large-scale mass production.

Disclosed in the present invention is a solar cell local-area doping method. The method comprises the steps: (a) molecular films with hydrophilic groups and / or hydrophobic groups are formed on the surface of a substrate; (b) doping sources are provided on the surface of the substrate said in the step (a), and the doping sources are distributed on the patterns formed by the molecular films; and (c) the thermal diffusion is conducted to the obtained substrate in the step (b), and therefore the substrate of the local-area doping solar cell is formed. According to the method in the present invention, the local-area doping structures with different patterns and sizes can be obtained, and the method is particularly suitable for building local-area emitter junctions and high-low surface fields of the solar cell.

The invention discloses an MOS type device and a manufacturing method thereof. The MOS device comprises an epitaxial layer, a mesa above the epitaxial layer, and a well region which is arranged abovethe epitaxial layer and distributed at both sides of the mesa, wherein the well region is etched to acquire a trench region, a source region is acquired through epitaxial grow in the acquired trench region, a gate oxide layer and a gate electrode sequentially grow above the mesa, a source electrode is arranged above the well region, and a drain electrode is arranged below the epitaxial layer. TheMOS device is advantaged in that the well region and the source region are formed through the epitaxial process and the CMP process, the ion implantation process for preparing the well region and thesource region is not needed, crystal lattice damage caused by ion implantation can be reduced, doping concentration of the well region and the source region can be accurately controlled, and thereby length of channels is not restricted by photolithography accuracy.

A manufacturing method of a rare earth-doped optical fiber preformed rod relates to the field of optical fiber preformed rods, and comprises the following steps: S1, mounting a cylindrical rare earth material preformed target rod at a gas inlet end in a quartz glass substrate tube, mounting the substrate tube on a chemical vapor deposition device; S2, focusing laser on the rare earth material preformed target rod, introducing mixed gas composed of oxygen, chlorine, silicon tetrachloride gas, germanium tetrachloride gas, and carbides of fluorine, performing deposition to form an optical fiber core rod preform; S3, melting the optical fiber core rod preform for contraction at a high temperature to form the transparent optical fiber preformed rod. The method increases the diameter of the optical fiber preformed rod, greatly improves the production manufacturing efficiency and the rare earth ion doping uniformity of the rare earth-doped optical fiber preformed rod, reduces the content of ineffective impurities of the optical fiber preformed rod, also reduces the production cost, and is suitable for popularization of large-scale production.