40results about How to "Control doping concentration" patented technology

The invention provides a GaInP / GaAs / InGaNAs / Ge four-junction solar cell, comprising a Si support substrate, wherein a first contact layer of Ge or GaInAs, a Ge sub cell, a first tunnel junction, an InGaNAs sub cell, a second tunnel junction, a GaAs sub cell, a third tunnel junction, a GaInP sub cell and a second contact layer of InGaNAs or GaAs are arranged on the surface of the Si support substrate in sequence. The invention also provides a preparation method of the GaInP / GaAs / InGaNAs / Ge four-junction solar cell. The preparation method comprises the following steps: 1, a GaAs substrate is provided; 2, the second contact layer, the GaInP sub cell, the third tunnel junction, the GaAs sub cell, the second tunnel junction, the InGaNAs sub cell, the first tunnel junction, the Ge sub cell and the first contact layer are grown on the surface of the GaAs substrate in sequence; 3, the Si support substrate is provided; 4, the Si support substrate is bonded to the surface of the first contact layer; and 5, the GaAs substrate is stripped from the second contact layer, so that the GaAs substrate is removed.

The invention discloses a preparation method of a PEDOT:PSS (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)) based flexible ammonia sensor, which comprises the steps of preparing PEDOT:PSS into ink suitable for printing on an ordinary ink-jet printer, depositing an ammonia sensitive material layer on an interdigital electrode in an ink-jet printing manner, printing a ferric chloride aqueous solution on the ammonia sensitive material layer in an ink jet manner, and performing deposition to form a doping material to accomplish preparation of the ammonia sensor. The prepared ammonia sensor has better response to ammonia at different concentrations, is highly sensitive to the low-concentration ammonia and wide in detection range and has the characteristics of short response time, highstability and good gas selectivity; a lower detection limit of the ammonia reaches 1ppm; the sensor is suitable for highly sensitive detection of the ammonia at the room temperature; and the preparedammonia sensor is good in flexibility and low in working temperature, and can be combined with wearable equipment to be applied to the ammonia detection in a surrounding environment of a human body and detection of human body breathing gas so as to give an early warning for a human health condition.

The invention relates to a method for manufacturing a double diffusion type optical avalanche diode with incident light on a back surface by adopting epitaxial equipment. MOCVD epitaxial equipment is used for carrying out epitaxial treatment once on an avalanche photodiode on an indium phosphide substrate; a double diffusion method of the MOCVD epitaxial equipment is used for doping; a sputteringmethod is used for manufacturing a P-surface electrode; the substrate is thinned and polished; a wet corrosion method is used for manufacturing a light incidence window and an anti-reflection layer; the sputtering method is used for manufacturing a N-surface electrode; and the N-surface electrode is alloyed. By using the double diffusion method, in the diffusion process, the invention realizes gradient doping of different regions and different concentration by controlling the flow rate of a diffusion source; and an abrupt junction is formed in diffusion. The invention has good diffusion uniformity and high rate of finished products of pieces; and the manufactured avalanche photodiode with incident light on the back surface has the characteristics of small dark current, high sensitivity, small series resistance, high reliability and the like.

The invention provides a GaInP / GaAs / Ge / Ge four-junction solar cell, comprising a Ge substrate layer, wherein a first Ge sub cell, a first tunnel junction, a second Ge sub cell, a second tunnel junction, a GaAs sub cell, a third tunnel junction, a GaInP sub cell and a contact layer of (In) / GaAs or Ge are arranged on the Ge substrate in sequence. The invention also provides a preparation method for the GaInP / GaAs / Ge / Ge four-junction solar cell. The preparation method comprises the following steps: 1, the Ge substrate layer is provided; 2, the first Ge sub cell is grown on the surface of the Ge substrate layer; 3, the first tunnel junction is grown on the surface of the first Ge sub cell; 4, the second Ge sub cell is grown on the surface of the first tunnel junction; 5, the second tunnel junction is grown on the surface of the second Ge sub cell; 6, the GaAs sub cell is grown on the surface of the second tunnel junction; 7, the third tunnel junction is grown on the surface of the GaAs sub cell; 8, the GaInP sub cell is grown on the surface of the third tunnel junction; and 9, the contact layer is grown on the surface of the GaInP sub cell.

The invention provides a method for making the back of an HBC cell doped with amorphous silicon, comprising: growing an intrinsic hydrogenated amorphous silicon layer on the back of an N-type polished silicon wafer; printing boron paste on the hydrogenated amorphous silicon layer, Drying; printing phosphorous paste on the hydrogenated amorphous silicon layer, drying; putting the printed silicon wafer into the laser for laser doping, to obtain the required square resistance of the P area and the N area; giving the surface of the cell A mask is plated as a polishing barrier; the position between the P region and the N region is cut with a laser, and the mask in the middle is removed. The method of the invention can ensure the uniformity and growth rate of the back doped amorphous silicon.

The invention provides a Zn in-situ doping P type hexagonal boron nitride film and a preparation method thereof, and belongs to the technical field of semiconductor material preparation and semiconductor doping. According to the method, a high-purity hBN target, a high-purity Zn target and a cleaned substrate are put into a magnetron sputtering growth chamber; a radio frequency magnetron double-target co-sputtering technology is used; Zn impurities are doped in situ in the hBN film growth process; after the growth completion, the film is subjected to in-situ annealing in the N2 atmosphere; thefilm is cooled to the chamber temperature under the N2 gas protection, so that the Zn in-situ doping P type hBN film is obtained on the substrate. The method is simple; the cost is low; safety and reliability are realized; the toxicity and harm do not exist; the doping concentration can be controlled through regulating the target distance and the sputtering power of the Zn target; the B atom lattice point position can be easily occupied by Zn in the hBN film and has the lower forming energy and smaller impurity activation energy as the substituting impurities, so that the Zn doping P type hBNfilm with lower resistivity can be obtained; the performance is stable.

A method for preparing an optical fiber quantum probe with controllable diamond particle doping concentration, comprising the following steps: step 1, mixing the solution with an aqueous solution of nano diamond particles containing NV color centers; step 2, by sol-gel method, Ultrasonically dissolve the solution doped with nano-diamond particles containing NV color centers, seal and let it stand until it is fully hydrolyzed to form a sol-gel; step 3, apply the sol-gel prepared in step 2) evenly on the The end face of the optical fiber is supported by a stepping motor, the end face of the optical fiber is in contact with the sol-gel and pulled at a certain rate after a certain period of time to form a hemispherical gel film with a certain thickness and a certain curvature on the end face, which is prepared after curing fiber optic quantum probe. The doping concentration of nano-diamond particles containing NV color centers can be controlled and mixed evenly. In addition, the manufacturing process of the probe is convenient, the repeatability is high, and mass production can be realized.

The invention discloses an MOS type device and a manufacturing method thereof. The MOS device comprises an epitaxial layer, a mesa above the epitaxial layer, and a well region which is arranged abovethe epitaxial layer and distributed at both sides of the mesa, wherein the well region is etched to acquire a trench region, a source region is acquired through epitaxial grow in the acquired trench region, a gate oxide layer and a gate electrode sequentially grow above the mesa, a source electrode is arranged above the well region, and a drain electrode is arranged below the epitaxial layer. TheMOS device is advantaged in that the well region and the source region are formed through the epitaxial process and the CMP process, the ion implantation process for preparing the well region and thesource region is not needed, crystal lattice damage caused by ion implantation can be reduced, doping concentration of the well region and the source region can be accurately controlled, and thereby length of channels is not restricted by photolithography accuracy.

A manufacturing method of a rare earth-doped optical fiber preformed rod relates to the field of optical fiber preformed rods, and comprises the following steps: S1, mounting a cylindrical rare earth material preformed target rod at a gas inlet end in a quartz glass substrate tube, mounting the substrate tube on a chemical vapor deposition device; S2, focusing laser on the rare earth material preformed target rod, introducing mixed gas composed of oxygen, chlorine, silicon tetrachloride gas, germanium tetrachloride gas, and carbides of fluorine, performing deposition to form an optical fiber core rod preform; S3, melting the optical fiber core rod preform for contraction at a high temperature to form the transparent optical fiber preformed rod. The method increases the diameter of the optical fiber preformed rod, greatly improves the production manufacturing efficiency and the rare earth ion doping uniformity of the rare earth-doped optical fiber preformed rod, reduces the content of ineffective impurities of the optical fiber preformed rod, also reduces the production cost, and is suitable for popularization of large-scale production.