Method for preparing amorphous silicon by ALD

An amorphous silicon, reaction source technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve the problems of high production cost, complex process flow, etc., achieve simple production, increase window , suitable for thinning effect

Active Publication Date: 2020-10-23
普乐新能源科技(泰兴)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, HBC&TopCon solar cells have not yet achieved large-scale industrialization, and its complicated process flow and high production cost are the main reasons for the lack of large-scale production.

Method used

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  • Method for preparing amorphous silicon by ALD
  • Method for preparing amorphous silicon by ALD
  • Method for preparing amorphous silicon by ALD

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A method for making amorphous silicon by ALD, comprising the following steps:

[0023] (1) Open the furnace door of the ALD (atomic layer deposition) equipment, put the sample made of amorphous silicon into the carrier, and vacuumize the equipment;

[0024] (2) The leakage rate of the equipment test is ≤5mTorr / min, and the temperature is raised to 200°C and kept at a constant temperature for 10 minutes;

[0025] (3) Feed the reaction source trimethylsilane and nitrogen, and grow amorphous silicon several times in this way according to the growth thickness, and the feeding amount of trimethylsilane and nitrogen is determined according to the actual situation;

[0026] (4) Pass N 2 Purge the special gas pipeline and pass N at the same time 2 Return the furnace tube to normal pressure;

[0027] (5) The sample of the furnace door is opened.

[0028] Table 1 Example 1 prepared amorphous silicon thickness and uniformity results

[0029]

Embodiment 2

[0031] A method for making amorphous silicon by ALD, comprising the following steps:

[0032] (1) Open the furnace door of the ALD (atomic layer deposition) equipment, put the sample made of amorphous silicon into the carrier, and vacuumize the equipment;

[0033] (2) Equipment test leakage rate = 3mTorr, while raising the temperature to 300°C and keeping the temperature constant for 15min;

[0034] (3) Feed the reaction source dichlorodiethylsilane and nitrogen, and grow amorphous silicon in this way several times according to the growth thickness;

[0035] (4) Pass N 2 Purge the special gas pipeline and pass N at the same time 2 Return the furnace tube to normal pressure;

[0036] (5) The sample of the furnace door is opened.

[0037] Table 2 The thickness and uniformity results of the amorphous silicon prepared in Example 2

[0038]

Embodiment 3

[0040] A method for making amorphous silicon by ALD, comprising the following steps:

[0041] (1) Open the furnace door of the ALD (atomic layer deposition) equipment, put the sample made of amorphous silicon into the carrier, and vacuumize the equipment;

[0042] (2) Equipment test leakage rate = 2mTorr, while raising the temperature to 500°C and keeping the temperature constant for 5min;

[0043] (3) Feed in the reaction source disilane and nitrogen, and grow amorphous silicon several times in this way according to the growth thickness;

[0044] (4) Pass N 2 Purge the special gas pipeline and pass N at the same time 2 Return the furnace tube to normal pressure;

[0045] (5) The sample of the furnace door is opened.

[0046] The amorphous silicon thickness and uniformity result that table 3 embodiment 3 prepares

[0047]

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PUM

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Abstract

The invention provides a method for preparing amorphous silicon by ALD. The method comprises the following steps of: opening a furnace door of ALD equipment, putting a sample for preparing the amorphous silicon into a carrier, and vacuumizing the ALD equipment; enabling an equipment test leakage rate to be smaller than or equal to 5 mTorr, meanwhile, rising the temperature to 200-600 DEG C, and keeping the constant temperature for 5-20 min; and introducing a reaction source and nitrogen gas, and repeating the steps for several times to grow the amorphous silicon. According to the method, in-situ doping of low-temperature amorphous silicon is adopted, the problem of non-uniformity of an amorphous silicon coating film can be effectively solved through the method, meanwhile, the growth rate of amorphous silicon is high, and the method is suitable for large-scale mass production.

Description

technical field [0001] The invention relates to the field of high-efficiency solar energy amorphous silicon manufacturing, in particular to an ALD method for manufacturing amorphous silicon. Background technique [0002] Amorphous silicon is a direct energy-band semiconductor. Its structure has many so-called "dangling bonds", that is, electrons that do not form bonds with surrounding silicon atoms. These electrons can generate current under the action of an electric field and do not The help of phonons is needed, so amorphous silicon can be made very thin, and has the advantage of low production cost. [0003] Solar cells based on crystalline silicon (monocrystalline silicon and polycrystalline silicon) have always occupied a leading position in installed capacity due to their earlier development history and relatively mature technology. Although the cost of crystalline silicon solar cells has been continuously reduced due to technological progress and market expansion, du...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20H01L21/02
CPCH01L31/202H01L21/02532H01L21/02592H01L21/0262Y02P70/50
Inventor 欧文凯
Owner 普乐新能源科技(泰兴)有限公司
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