Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

405results about How to "Reduced growth rate" patented technology

Methods and compositions for reducing activity of the atrial natriuretic peptide receptor and for treatment of diseases

Methods, compositions and devices are provided by the present invention for reducing activity of a natriuretic peptide receptor and other signals. Therapeutic treatments are provided by use of polynucleotides encoding a natriuretic peptide or by regulating the expression of natriuretic peptide receptor, such as NPRA and NPRC, or combinations of these therapies. Routes used for delivering polynucleotides encoding a natriuretic peptide, or, for example, siRNA that down regulates natriuretic peptide receptor include subcutaneous injection, oral gavage, transdermal and intranasal delivery routes. Compositions can include chitosan, chitosan derivatives, and chitosan derivative and a lipid. Transdermal delivery can use a transdermal cream. Intranasal delivery can use a dropper or an aspirator for delivery of a mist. Oral gavage delivers equivalent to oral delivery. Delivery permits cell and tissue specific targeting of gene therapies resulting in expression of a natriuretic peptide or down regulation of natriuretic peptide receptor. A variety of cancers, asthma and viral diseases can be treated therapeutically using the methods and compositions of the present invention.
Owner:MOHAPATRA SHYAM S +4

Method of Regulating Hair Growth

Method for regulating hair growth, comprising the steps of applying a composition to keratinous tissue comprising the hair in need of regulation, said composition comprising at least one PARP-1 inhibiting compound; and delivering energy to the keratinous tissue by means of an energy delivery device.
Owner:THE PROCTER & GAMBNE CO

Three-dimensional surface shot peening jet electrodeposition manufacturing method and device

The invention provides a three-dimensional surface shot peening jet electrodeposition manufacturing method and device. According to the manufacturing method and device, a deposition solution and hard particles are mixed and deposit on a conductive substrate in a spraying manner, so that the rapid manufacturing technology of electrodeposition is realized, the growth rate of grains in the electrodeposition process is slowed down, the purpose of refining the grains is reached, and the quality of a deposition layer is dramatically improved; with combination of the shot peening strengthening technology and the electrodeposition technology, the defects of loose texture, pockmarks, pits and the like of the deposition layer caused by single electrodeposited cathode hydrogen evolution and impurity adhesion can be effectively overcome, and the hardness and the compactness of the deposition layer are improved; meanwhile, by introducing a five-axis linkage numerical control machining system, processing formation of a three-dimensional space can be realized, and the uniformity and the shape accuracy of the deposition layer are improved; and the technology can be widely applied to production of noble metal devices and parts in complex shapes and can also be used for surface rapid coat-plating, a strengthening technology and the like.
Owner:JIANGSU UNIV

Vertical hydride vapor phase epitaxy growth system

The invention relates to a vertical hydride vapor phase epitaxy growth system, which comprises a reaction chamber, a graphite support, epitaxy growth substrates and a heating system, wherein the graphite support is arranged in a growth region of the reaction chamber, and the reaction chamber is of a vertical structure; a plurality of epitaxy growth substrates are arranged above the graphite support or inversely arranged below the graphite support; a tail gas outlet is positioned at the lower part of the reaction chamber, wherein the reaction chamber is of an axial sleeve structure and is formed by sleeving a chamber pipe with a gas conduit, wherein the gas conduit is positioned at the inlet part of the chamber pipe, and a plurality of separating gas path structures are arranged inside the inlet part of the gas conduit and axially and uniformly distributed and are used for conveying a reaction gas to the epitaxy growth substrates of the growth region; and the outer conduit wall of the gas conduit extends to exceed the position of the graphite support. The vertical hydride vapor phase epitaxy growth system disclosed by the invention can be used for effectively preventing deposition and blockage caused by pre-reaction and reaction of tail gases, prolonging the sustained growing time of an HVPE (Hydride Vapor Phase Epitaxy) system and obtaining a GaN body single crystal material which cannot exist naturally and cannot grow by a conventional method.
Owner:NANJING UNIV

Manufacturing method for cilicon epitaxial wafer for 6'' VDMOS tube

The present invention relates to a preparation method of silicon epitaxial wafer for power VDMOS tube. Firstly, selection and usage of substrate are important, the selected substrate not only can meet the requirements for device, but also can meet the requirements for epitaxy. Its preparation method includes the following steps: selecting proper gas corrosion flow and gas corrosion time, reducing concentration of gas corrosion impurity in epitaxial reactor so as to reduce self-doping in epitaxial growth process; first layer epitaxial growth, on the substrate surface with high concentration utilizing lower temperature to grow a layer of purity epitaxial layer, encapsulating substrate surface and edge, controlling its growth temperature, growth rate and epitaxial time so as to make encapsulating layer obtain ideal effect, at the same time, selecting proper epitaxial condition to make the deformation of epitaxial wafer be minimum; and second layer epitaxial growth, utilizing tower temperature to grow a layer of epitaxial layer whose resistivity and thickness can meet requirements for device.
Owner:NANJING GUOSHENG ELECTRONICS

Tyrosine kinase receptor antagonists and methods of treatment for pancreatic and breast cancer

A method of treatment is disclosed whereby cancer cells are brought into contact with a formulation comprising an inhibitor of tyrosine kinase receptors. The formulation may be comprised of an injectable carrier and two or more tyrosine kinase receptor inhibitors which may be nordihydrogluaiaretic acid (NDGA) and doxyrubicine.
Owner:RGT UNIV OF CALIFORNIA

Modulation of meiotic recombination

The invention provides methods of modifying the level of expression or functional activity of factors such as enzymes or other catalytic proteins or structural proteins, alone or in concert, to modify the frequency of meiotic homologous recombination involving the exchange of genetic information between non-sister chromatids from homologous maternal and paternal chromosomes. The steps at which modulation may occur include: homologous chromosome pairing, double-strand break formation; resection; strand invasion; branch migration; and resolution. Methods of plant and animal breeding are also provided that utilize the modulation of meiotic homologous recombination.
Owner:AGRI & AGRI FOOD +1
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products