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Method for preparing epitaxial graphene by thermal cracking silicon carbide

A graphene and silicon carbide technology, applied in the field of materials, can solve the problems of reducing the quality and uniformity of epitaxial graphene

Inactive Publication Date: 2013-07-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

However, the introduction of argon is a double-edged sword. On the one hand, it can slow down the growth rate of graphene, but at the same time, it will introduce gas flow and temperature disturbance during the pyrolysis process, which will reduce the quality and uniformity of epitaxial graphene.

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  • Method for preparing epitaxial graphene by thermal cracking silicon carbide

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Embodiment Construction

[0013] Attached below figure 1 and specific examples to further illustrate specific embodiments of the present invention.

[0014] The 5×5 mm silicon carbide substrate 1 was washed successively with acetone, isopropanol, and hydrofluoric acid solution, rinsed with deionized water, and dried with a nitrogen gun. Place the cleaned substrate 1 in the epitaxial region 2 of the graphite boat 3, and put it into the pyrolysis silicon carbide system until the vacuum degree reaches 1×10 -5 After Pa, 0.7-0.9 atmospheric pressure of high-purity hydrogen is introduced, and the temperature is kept at 1550° C. for 15-20 minutes to etch the surface of the substrate 1 to form a regular step shape. Naturally cool down to room temperature under the protection of hydrogen, and discharge hydrogen. Fasten the graphite cap 4 with pores 5 on top of the silicon carbide substrate 1 . It is then put into a pyrolysis silicon carbide system. When the vacuum reaches 1×10 again -5 Pa, through the 0.7 ...

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Abstract

The invention relates to a method for preparing epitaxial graphene by thermal cracking silicon carbide, and belongs to the technical field of materials. According to the method improved based on method for preparing epitaxial graphene by argon assistant thermal cracking silicon carbide, in the process for preparing epitaxial graphene by argon assistant thermal cracking silicon carbide, a graphite cover (4) with a plurality air holes (5) covers a silicon carbide substrate (1) in an electric induction heating graphite boat, so that the disturbance of air flow and temperature is reduced, and graphene with a greater domain area can be obtained. Due to air holes (5), on the one hand, sublimation of Si is not affected, and on the other hand, the sublimating speed of Si is appropriately controlled to appropriately reduce the growing speed of graphene so as to better control growth thickness of graphene. The air holes (5) are consistent in aperture and uniformly distributed. The uniformity and the electronic mobility of graphene prepared are greatly improved.

Description

technical field [0001] The invention belongs to the technical field of materials, and relates to a method for preparing epitaxial graphene by thermally cracking silicon carbide, in particular a method for preparing epitaxial graphene by thermally cracking silicon carbide with slight disturbance of airflow and temperature Background technique [0002] The method of pyrolyzing silicon carbide to prepare epitaxial graphene was first proposed by a research team led by Professor Walter de Heer of the Georgia Institute of Technology. The principle is to use an induction heating device in an ultra-high vacuum environment The graphite induction heating boat is heated to 1400°C to sublimate the Si atoms on the surface of the silicon carbide substrate in the graphite boat, and the enriched C atoms on the surface of the silicon carbide are restructured to form graphene with a hexagonal honeycomb structure. The disadvantage of this method is that in an ultra-high vacuum environment, Si ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/188
Inventor 陈远富郝昕王泽高李萍剑刘竞博张万里李言荣
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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