35 results about "Epitaxial graphene" patented technology

A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having a monolayer. A stressor layer is formed on the spreading layer, and the stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein the closest monolayer remains on the stressor layer.

A method for reducing graphene film thickness on a donor substrate and transferring graphene films from a donor substrate to a handle substrate includes applying a bonding material to the graphene on the donor substrate, releasing the bonding material from the donor substrate thereby leaving graphene on the bonding material, applying the bonding material with graphene onto the handle substrate, and releasing the bonding material from the handle substrate thereby leaving the graphene on the handle substrate. The donor substrate may comprise SiC, metal foil or other graphene growth substrate, and the handle substrate may comprise a semiconductor or insulator crystal, semiconductor device, epitaxial layer, flexible substrate, metal film, or organic device.

Graphene, can be used to make an implantable neuronal prosthetic which can be indefinitely implanted in vivo. Graphene electrodes are placed on a 3C—SiC shank and electrical insulation is provided by conformal insulating SiC. These materials are not only chemically resilient, physically durable, and have excellent electrical properties, but have demonstrated a very high degree of biocompatibility. Graphene also has a large specific capacitance in electrolytic solutions as well as a large surface area which reduces the chances for irreversible Faradaic reactions. Graphene can easily be constructed on SiC by the evaporation of Si from the surface of that material allowing for mechanically robust epitaxial graphene layers that can be fashioned into electrodes using standard lithography and etching methods.

Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si substrate; an under layer formed on the Si substrate; and at least one epitaxial graphene layer formed on the under layer.

The invention discloses a method for graphene epitaxial growth on 4H-SiC silicon surface, mainly solving the problems of small graphene area and poor homogeneity during graphene epitaxial growth on the 4H-SiC silicon surface. The method is as follows: a 4H-SiC silicon surface is cleaned to remove organic remains and ionic contaminants on the surface; hydrogen and propane are led in to carry out hydrogen corrosion to the 4H-SiC silicon surface to remove surface scratches so as to form regular step-shaped stripes; silane is led in to remove oxide formed by hydrogen corrosion on the surface; under the circumstance of argon, silicon atoms are evaporated to ensure carbon atom to reconstruct and form epitaxial graphene in the form of sp<2> by heating. The invention can be used for manufacturing epitaxial graphene materials.

In a method of making graphite devices, a thin-film graphitic layer disposed against a preselected face of a substrate is created on the preselected face of the substrate. A preselected pattern is generated on the thin-film graphitic layer. At least one functionalizing molecule is attached to a portion of the graphitic layer. The molecule is capable of interacting with π bands in the graphitic layer.

A semiconductor component (1, 20, 30) comprising a semiconductor substrate (3) composed of silicon carbide and comprising separate electrodes (4, 5) applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene (11) on silicon carbide, in such a way that a current channel is formed between the electrodes (4, 5) through the semiconductor substrate (3).

The invention relates to a method for preparing epitaxial graphene by thermal cracking silicon carbide, and belongs to the technical field of materials. According to the method improved based on method for preparing epitaxial graphene by argon assistant thermal cracking silicon carbide, in the process for preparing epitaxial graphene by argon assistant thermal cracking silicon carbide, a graphite cover (4) with a plurality air holes (5) covers a silicon carbide substrate (1) in an electric induction heating graphite boat, so that the disturbance of air flow and temperature is reduced, and graphene with a greater domain area can be obtained. Due to air holes (5), on the one hand, sublimation of Si is not affected, and on the other hand, the sublimating speed of Si is appropriately controlled to appropriately reduce the growing speed of graphene so as to better control growth thickness of graphene. The air holes (5) are consistent in aperture and uniformly distributed. The uniformity and the electronic mobility of graphene prepared are greatly improved.

The invention discloses a preparation method of metal atom-doped large-area regular epitaxial graphene, and applied to the technical field of microelectronics. Metal atoms are introduced to a SiC pyrolysis process and Ar atmosphere is adopted for protection in an auxiliary manner, so that the large-area regular epitaxial graphene can be prepared, external metal atoms also can be guided to be directly participated in a graphene lamination layer growth process, thereby promoting atom intercalation or hybridization between metal atoms and C atoms to realize doping of metal atoms, and avoiding damage to the overall structure of graphene caused by ion implantation; pretreatment of metal atom beams is the important premise of realizing doping, and by virtue of the Ar atmosphere environment, generate of surface holes can be suppressed, so that regular and uniform surface appearance of the epitaxial graphene sample is ensured; and the preparation method is simple in technical idea, high in operability, is a stable and effective metal atom doping method, and capable of providing significant guidance and reference to optimization preparation and performance improvement of epitaxial graphene.

The invention relates to a method for epitaxially preparing graphene and graphene devices by pretreating SiC substrates. It includes the steps of: performing hydrogen etching on the SiC substrate, and then performing oxidation treatment on the SiC substrate after hydrogen etching, at a temperature of 800-1300° C., and a treatment time of 15-120 minutes; The temperature of the substrate is raised to 1450-1700°C for graphene growth. The present invention passivates the surface of SiC through oxidation pretreatment, reduces the nucleation density of SiC substrate epitaxial growth graphene, thereby obtains the graphene material with larger size and better performance, and on this basis SiC epitaxial graphene The wafer undergoes deposition, photolithography, doping and integration procedures to prepare corresponding graphene devices.

The invention discloses a large-area single-layer graphene preparation technology. The buffer layer is intercalated with In atoms by using the intercalation technology. Originally, only the surface of the buffer layer is used, and the In atoms are inserted between the buffer layer and the SiC substrate to make the buffer layer Converting to graphene, on the one hand, a single layer of large-area graphene is prepared, and on the other hand, the preparation temperature of graphene is reduced. On the surface where the original buffer layer and single-layer epitaxial graphene coexist, In atoms are inserted between the buffer layer and the SiC substrate, the buffer layer becomes graphene and is perfectly connected with the original epitaxial graphene, forming a large-area single-layer graphene . In addition, the intercalation-formed graphene has a weak interaction with the substrate, and it is separated graphene, which achieves the effect of ionization. This technology can not only prepare large-area graphene, but also control the layer thickness of graphene, which provides important guidance and reference value for applications in related fields such as microelectronics, superconductivity, and strain engineering.