Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for graphene epitaxial growth on 4H-SiC silicon surface

An epitaxial growth and graphene technology, applied in the field of microelectronics, can solve the problems of difficult to control the growth process, difficult to obtain large-scale uniform samples, and low uniformity.

Inactive Publication Date: 2009-12-16
XIDIAN UNIV
View PDF0 Cites 92 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Disadvantages: the growth process is difficult to control, and it is difficult to obtain large-scale uniform samples
Using this epitaxial growth method, although Graphene with high quality and large size can be obtained, there are many factors that make the area of ​​the grown Graphene too small and the uniformity is not high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for graphene epitaxial growth on 4H-SiC silicon surface
  • Method for graphene epitaxial growth on 4H-SiC silicon surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Embodiment 1, the steps of the present invention to epitaxially grow Graphene on the 4H-SiC silicon surface are as follows:

[0017] Step 1, remove sample surface pollutants.

[0018] For surface cleaning of 4H-SiC silicon surface, first use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0019] Step 2, performing hydrogen etching on the 4H-SiC silicon surface.

[0020] Place the 4H-SiC silicon surface in a vacuum of 2.4×10 -6 mbar CVD furnace chamber, and feed hydrogen gas with a flow rate of 60l / min, when the temperature rises to 1400°C, then feed propane with a flow rate of 8ml / min, heat up to 1500°C, pressure 90mbar, keep for 10 minutes, and then cool down to room temperature Finally, take it out to remove surface scratches and form regular...

Embodiment 2

[0025] Embodiment 2, the steps of the present invention to epitaxially grow Graphene on the 4H-SiC silicon surface are as follows:

[0026] Step 1, remove sample surface contaminants.

[0027] For surface cleaning of 4H-SiC silicon surface, first use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0028] Step 2, performing hydrogen etching on the 4H-SiC silicon surface.

[0029] Place the 4H-SiC silicon surface in a vacuum of 2.4×10 -6 mbar CVD furnace chamber, and feed hydrogen with a flow rate of 100l / min, when the temperature rises to 1500°C, then feed propane with a flow rate of 12ml / min, raise the temperature to 1650°C, press 100mbar, keep for 20 minutes, and then cool down to room temperature Finally, take it out to remove surface scratches and ...

Embodiment 3

[0034] Embodiment 3, the steps of the present invention to epitaxially grow Graphene on the 4H-SiC silicon surface are as follows:

[0035] Step A, remove sample surface contaminants.

[0036] For surface cleaning of 4H-SiC silicon surface, first use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0037] Step B, performing hydrogen etching on the 4H-SiC silicon surface.

[0038] Place the 4H-SiC silicon surface in a vacuum of 2.4×10 -6 mbar CVD furnace cavity, and feed hydrogen with a flow rate of 90l / min, when the temperature rises to 1450°C, then feed propane with a flow rate of 10ml / min, heat up to 1600°C, pressure 96mbar, keep for 15 minutes, and then cool down to room temperature Finally, take it out to remove surface scratches and form regular ste...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for graphene epitaxial growth on 4H-SiC silicon surface, mainly solving the problems of small graphene area and poor homogeneity during graphene epitaxial growth on the 4H-SiC silicon surface. The method is as follows: a 4H-SiC silicon surface is cleaned to remove organic remains and ionic contaminants on the surface; hydrogen and propane are led in to carry out hydrogen corrosion to the 4H-SiC silicon surface to remove surface scratches so as to form regular step-shaped stripes; silane is led in to remove oxide formed by hydrogen corrosion on the surface; under the circumstance of argon, silicon atoms are evaporated to ensure carbon atom to reconstruct and form epitaxial graphene in the form of sp by heating. The invention can be used for manufacturing epitaxial graphene materials.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to the manufacture of semiconductor materials, in particular to a method for preparing graphene epitaxially grown on a 4H-SiC (0001) surface. Background technique [0002] The microfabrication technology based on silicon material marked by integrated circuit has created the contemporary information society. It is generally believed that the processing limit of silicon materials is 10nm line width. Restricted by physical principles, it is impossible to produce products with stable performance and higher integration if the thickness is smaller than 10nm. Therefore, current technological advances on silicon materials will appear increasingly difficult, and people are pinning their hopes on electronics based on carbon-based materials. The first to attract attention is carbon nanotubes, which have high mobility, high thermal conductivity, and good current capability, etc., but ca...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B31/04C30B29/02
Inventor 张玉明郭辉王党朝张义门汤晓燕王悦湖王德龙
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com