Method for regulating electronic band gap in SiC-based epitaxial graphene

Abstract

The invention discloses a method for regulating an electronic band gap in SiC-based epitaxial graphene. The method comprises the following steps of (a) calculating the damage distribution as well as electronic and nuclear energy loss distribution of irradiation ions in SiC crystals through SRIM software, and calculating an energy band structure of defected graphene; (b) irradiating an SiC-based epitaxial graphene sample by using an ion beam to form epitaxial graphene with the defected structure; (c) respectively observing metallographic structures of irradiated and non-irradiated graphene by using a metallographic microscope, and observing the surface folding changes of the irradiated and non-irradiated graphene by using a scanning electron microscope; (d) calculating the lattice defect amount of the graphene sample under different irradiation conditions through the formula as shown in the specification; and (e) testing the band gap in the epitaxial graphene by virtue of an infrared spectrum to achieve the aim of regulating the band gap. A controllable defected structure is generated in the graphene by using an ion irradiation method, furthermore, the electronic band gap in the graphene is regulated, and therefore, the defects of poor controllability and repeatability in the traditional process are overcome.

Description

Technical field [0001] The invention relates to a method for regulating the electronic band gap of SiC-based epitaxial graphene. Background technique [0002] Graphene is a single-layer carbon atom film, which is a typical two-dimensional crystal material. Because of its superior physical and chemical properties, its research field has penetrated into electronic devices, sensors, energy storage, modulators, etc. Because graphene has a unique electronic structure near the Dirac point, it has many unique properties. Some scientists boldly predict that graphene will eventually replace silicon as the material of choice in the field of electronic information. However, its zero electronic band gap has severely restricted its application range. Therefore, opening and regulating the electronic band gap of graphene is a key issue that determines whether it can be successfully applied in the field of electronic information. At present, the research on regulating the energy gap of graphe...

AI Technical Summary

Problems solved by technology

This invention has the following disadvantages: the type of implanted ions is limited to P ions, which requires the use of a dedicated ion source, which increases the cost of implantation; the purpose of this invention patent is to open the band gap, and does not explain the controllability of the electronic band gap, which limits its Value