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Method for realizing epitaxial growth of wafer level graphene on 4H/6H-SiC carbon surfaces

An epitaxial growth, wafer-level technology, applied in the field of microelectronics, can solve the problems of low uniformity and small graphene area, and achieve the effect of improving the area and uniformity

Inactive Publication Date: 2012-06-20
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Using this epitaxial growth method, although graphene with high quality and large size can be obtained, there are many factors that make the grown graphene area too small and the uniformity is not high.

Method used

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  • Method for realizing epitaxial growth of wafer level graphene on 4H/6H-SiC carbon surfaces
  • Method for realizing epitaxial growth of wafer level graphene on 4H/6H-SiC carbon surfaces
  • Method for realizing epitaxial growth of wafer level graphene on 4H/6H-SiC carbon surfaces

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Experimental program
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Effect test

Embodiment 1

[0020] Embodiment 1, the present invention is in 4H-SiC Carbon surface epitaxial growth of wafer-scale graphene:

[0021] Step 1, remove sample surface pollutants.

[0022] to 4H-SiC The surface of the carbon surface is cleaned, that is, the SiC is placed in the ultrasonic wave of deionized water for 15 minutes, taken out, and rinsed repeatedly; the SiC is soaked in ammonia water: hydrogen peroxide: deionized water = 1:2:5 solution, boiled, soaked for 15 minutes, and used Repeated cleaning with deionized water; immerse SiC in a solution of hydrochloric acid: hydrogen peroxide: deionized water = 1:2:8 and boil for 15 minutes, then wash repeatedly with deionized water; put SiC in 5% HF solution for 1 minute, rinse with deionized water Rinse; place the SiC in deionized water for ultrasonic cleaning for 15 minutes, rinse repeatedly, take it out and dry it.

[0023] Step 2, in 4H-SiC The carbon surface is hydrogen etched.

[0024] The cleaned 4H-SiC The carbon surface is ...

Embodiment 2

[0029] Embodiment 2, the present invention is in 6H-SiC Carbon surface epitaxial growth of graphene:

[0030] Step 1, for 6H-SiC The surface of the carbon surface is cleaned to remove pollutants on the sample surface.

[0031] 1a) Place the SiC in deionized water for ultrasonic cleaning for 15 minutes, take it out, and rinse repeatedly;

[0032] 1b) Soak the SiC in a solution of ammonia water: hydrogen peroxide: deionized water = 1:2:5, boil, soak for 15 minutes, and wash repeatedly with deionized water;

[0033] 1c) Immerse the SiC in a solution of hydrochloric acid: hydrogen peroxide: ionized water = 1:2:8 and boil for 15 minutes, then wash it repeatedly with deionized water;

[0034] 1d) Put SiC in 5% HF solution for 1 min, and rinse with deionized water;

[0035] 1e) Place the SiC in deionized water for ultrasonic cleaning for 15 minutes, rinse repeatedly, take it out and dry it.

[0036] Step 2, in 6H-SiC The carbon surface is hydrogen etched.

[0037] The cleaned...

Embodiment 3

[0042] Embodiment 3, the steps of the present invention to epitaxially grow Graphene on the 6H-SiC carbon surface are as follows:

[0043] Step A, for 6H-SiC The surface of the carbon surface is cleaned to remove pollutants on the sample surface.

[0044] Place the SiC in the ultrasonic wave of deionized water and clean it for 15 minutes, take it out, and rinse it repeatedly;

[0045] Soak SiC in a solution of ammonia: hydrogen peroxide: deionized water = 1:2:5, boil, soak for 15 minutes, and wash repeatedly with deionized water;

[0046] Immerse SiC in a solution of hydrochloric acid: hydrogen peroxide: deionized water = 1:2:8, boil for 15 minutes, and wash with deionized water repeatedly;

[0047] Put SiC in 5% HF solution for 1min, rinse with deionized water;

[0048] Place the SiC in deionized water for ultrasonic cleaning for 15 minutes, rinse repeatedly, take it out and dry it.

[0049] Step B, in 6H-SiC The carbon surface is hydrogen etched.

[0050] The cleaned...

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Abstract

The invention discloses a method for realizing epitaxial growth of wafer level graphene on 4H / 6H-SiC carbon surfaces, which aims to realize that when epitaxial growth of wafer level graphene is realized by an existing method, the area of produced graphene is too small and uniformity of the graphene is low. The method includes steps of cleaning and treating the 4H / 6H-SiC carbon surfaces to remove organic residues and ion pollutant on the surfaces, filling hydrogen to realize hydrogen etching for the 4H / 6H-SiC carbon surfaces to remove scratches of the surfaces, and forming regular step-shaped strips; feeding silane to remove oxide caused by hydrogen etching on the surfaces; feeding argon flow to realize sublimation of silicon atoms under the condition of pressure of 2mbar by the aid of heating, and realizing reconstitution of surfaces of substrate in a sp2 mode by the aid of carbon atoms to form epitaxial graphene. The graphene prepared by the aid of the process method has larger area and fine uniformity, and the method can be applied to preparing wafer level epitaxial graphene materials.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to the manufacture of semiconductor materials, specifically in 4H / 6H-SiC Preparation method of wafer-scale graphene grown by carbon surface epitaxial growth. Background technique [0002] Graphene is composed of single layer sp 2 The material with hexagonal planar lattice structure composed of carbon atoms has excellent physical properties, mainly in the following aspects: (1) Strong bipolar electric field effect: only an external electric field is applied, and its charge carrier density is It can continuously change from n-type to p-type; (2) Near the Dirac point, electrons and holes show a linear dispersion relationship like photons. At low temperatures, the speed of electrons and holes is close to three times the speed of light in vacuum (3) At room temperature, the mobility of graphene electrons and holes reaches 2×10 4 cm 2 / V·s, whose value is 10 times higher than ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/188
Inventor 张玉明王党朝王航雷天民张义门王悦湖汤晓燕雷军
Owner XIDIAN UNIV
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