Vertical hydride vapor phase epitaxy growth system

Abstract

The invention relates to a vertical hydride vapor phase epitaxy growth system, which comprises a reaction chamber, a graphite support, epitaxy growth substrates and a heating system, wherein the graphite support is arranged in a growth region of the reaction chamber, and the reaction chamber is of a vertical structure; a plurality of epitaxy growth substrates are arranged above the graphite support or inversely arranged below the graphite support; a tail gas outlet is positioned at the lower part of the reaction chamber, wherein the reaction chamber is of an axial sleeve structure and is formed by sleeving a chamber pipe with a gas conduit, wherein the gas conduit is positioned at the inlet part of the chamber pipe, and a plurality of separating gas path structures are arranged inside the inlet part of the gas conduit and axially and uniformly distributed and are used for conveying a reaction gas to the epitaxy growth substrates of the growth region; and the outer conduit wall of the gas conduit extends to exceed the position of the graphite support. The vertical hydride vapor phase epitaxy growth system disclosed by the invention can be used for effectively preventing deposition and blockage caused by pre-reaction and reaction of tail gases, prolonging the sustained growing time of an HVPE (Hydride Vapor Phase Epitaxy) system and obtaining a GaN body single crystal material which cannot exist naturally and cannot grow by a conventional method.

Description

technical field [0001] The invention relates to a hydride vapor phase epitaxy HVPE growth system, which is used for growing semiconductor materials such as GaN-based materials, and is a vertical hydride vapor phase epitaxy growth system. Background technique [0002] Group III-V nitride materials (also known as GaN-based materials) mainly composed of GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have attracted much attention in the world in recent years. [0003] There are many methods for the growth of GaN-based materials, such as metal organic vapor phase epitaxy (MOCVD), high temperature and high pressure synthesis GaN single crystal, molecular beam epitaxy (MBE), sublimation method and hydride vapor phase epitaxy (HVPE), etc. Due to the limitations of the physical properties of GaN-based materials, the growth of GaN bulk single crystals is very difficult and has not been put into practical use. Hydride vapor phase epitaxy can be used for hom...

AI Technical Summary

Problems solved by technology

In addition, in the HVPE system, due to the ammonium chloride in the reaction product, when it is lower than 340 degrees Celsius, it is easy to become dust deposition to block the reaction chamber, resulting in the termination of the reaction and short system running time, which is very critical in the HVPE growth system There is currently no effective way to solve the problem

In the vertical HVPE system, due to the pre-reaction of ammonia and GaCl, the pipeline will be blocked, resulting in the termination of the transport of GaCl reaction gas, which hinders the further progress of the reaction

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