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Method for growth of germanium nitrogen codoped silicon carbide single crystal material

A technology of silicon carbide single crystal and growth method, which is applied in the growth of polycrystalline materials, single crystal growth, single crystal growth and other directions, can solve the problems of inability to reduce stress, low germanium concentration, low crystal quality, etc., and achieves reduction of crystal stress. , the effect of increasing lattice adaptation and improving crystal quality

Active Publication Date: 2017-07-21
SHANDONG UNIV
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Problems solved by technology

[0004] Aiming at the technical defect of directly doping germanium in the PVT method, the present invention provides a growth method of germanium-nitrogen co-doped silicon carbide single crystal material, which makes up for the failure of single-doped germanium element to increase the lattice fitness of silicon carbide and the low germanium doping concentration. low disadvantage
Solve the problem that the concentration of germanium is low during the growth process of germanium-doped silicon carbide single crystal, and the degree of lattice fit is not high, which leads to the problem that the stress cannot be reduced and the crystal quality is not high

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  • Method for growth of germanium nitrogen codoped silicon carbide single crystal material

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Embodiment Construction

[0011] A method for growing a silicon carbide single crystal material co-doped with germanium and nitrogen, which is grown by a PVT method in a single crystal growth furnace, comprising:

[0012] -In the growth crucible placed in the furnace chamber, provide silicon carbide source powder, germanium dopant, and silicon carbide seed crystals in a spaced relationship with the source powder; place the germanium dopant in a small crucible and place it on the The center of the bottom of the growth crucible or near the center of the bottom of the growth crucible is buried by the silicon carbide source powder;

[0013] - evacuating the furnace chamber, induction heating the growth crucible to establish a temperature gradient, and providing a growth environment;

[0014] First raise the temperature to 1200-1400°C, feed argon as a carrier gas, and feed nitrogen into the furnace chamber at the same time; control the pressure at 700-850 mbar, the flow rate of argon gas is 15-30 sccm, and ...

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Abstract

The invention relates to a method for growth of a germanium nitrogen codoped silicon carbide single crystal material. A PVT method is adopted according to the method; in the germanium-doped silicon carbide single crystal growth process, nitrogen at a certain proportion is led into a growth atmosphere, argon is led in to serve as a carrier gas with the pressure controlled to be 700-850 mbar, argon flow is 15-30 sccm, and the nitrogen flow is 0.5-2 sccm; and the germanium nitrogen codoped silicon carbide single crystal is obtained. On the one hand, high-concentration germanium element doping is implemented, and on the other hand, by adjusting specific doping concentration of germanium and nitrogen, the goal of increasing silicon carbide crystal lattice fitness degree, reducing crystal stress and improving crystal quality is achieved. Application of the silicon carbide crystal material to visible light and infrared light wave bands is expanded.

Description

technical field [0001] The invention relates to a growth method of a silicon carbide single crystal material co-doped with germanium and nitrogen, belonging to the technical field of crystal materials. Background technique [0002] As a member of the third-generation wide bandgap semiconductor materials, compared with common semiconductor materials such as silicon (Si) and gallium arsenide (GaAs), silicon carbide materials have a large band gap, high carrier saturation migration speed, and thermal conductivity. High efficiency, high critical breakdown field strength and many other excellent properties. Based on these excellent characteristics, silicon carbide materials are ideal materials for preparing high-temperature electronic devices and high-frequency and high-power devices. [0003] At present, there are still some shortcomings in the application of silicon carbide crystal materials. For example, when used as a substrate epitaxial nitride, a large number of defects wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/00C30B29/36
Inventor 陈秀芳李天徐现刚胡小波
Owner SHANDONG UNIV
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