76results about How to "Change the electric field distribution" patented technology

The invention provides a surface wave plasma device. A connection cavity is used to connect a resonant cavity and a rectangular waveguide. A screw probe extends into the resonant cavity via the rectangular waveguide and the connection cavity, so that microwave energy is fed in the connection cavity and the resonant cavity. By arranging a plurality of quartz windows in the bottom wall of the resonant cavity, the electric field of a standing wave formed in the resonant cavity by a microwave, and plasma is activated in the vacuum cavity. The plurality of quartz windows are equal to a plurality of plasma sources, which achieves uniformization of the plasma in the vacuum cavity in a large area compared with the conventional single plasma source, so as to meet the processing requirement for large-scale wafers.

The invention provides an auxiliary anode mask micro electrolytic machining array micro-pit system and method, and belongs to the technical field of micro electrolytic machining. The system comprises an upper clamp (1), a lower clamp (7), a tool cathode (2) which is arranged on the upper clamp (1), a tool anode (6) which is arranged on the lower clamp (7), mask plates (5) which are arranged on the surface of the tool anode (6) and of group drilling structures, and auxiliary anodes (4) which are fixed on the lower clamp (7) and surround edges of the tool anode (6); an electrolyte flow pass is formed between the tool cathode (2) and the tool anode (6), and the system further comprises a main power supply (9) and an auxiliary power supply (8), wherein the positive pole of the main power supply (9) and the positive pole of the auxiliary power supple (8) are connected with the tool anode (6) and the auxiliary anode (4) respectively, and the negative pole of the main power supply (9) and the negative pole of the auxiliary power supple (8) are both connected with the tool cathode (2). The auxiliary anode mask micro electrolytic machining array micro-pit system and a method are characterized in that an auxiliary power supply voltage is smaller than a main power supply voltage, and a potential difference exists between the auxiliary power supply voltage and the main power supply voltage, so that the electric current density in all mask holes of the work piece surface is consistent, and the dimensional homogeneity of array micro-pits is improved.

The invention provides an array substrate, a preparation method and an application thereof and a performance improvement method. The array substrate comprises a substrate, a shielding layer, a thin film transistor and a compensation layer, wherein the shielding layer is arranged on one surface of the substrate; the thin film transistor is arranged on the substrate and covers the shielding layer; and the compensation layer is arranged on one side, far from the substrate, of the thin film transistor and used for forming a second electric field in an active layer of the thin film transistor. Therefore, by changing the electric field distribution in the active layer of the thin film transistor, influence of the first electric field to the characteristic of the thin film transistor can be compensated, so that a technical effect of improving or eliminating an abnormal phenomenon of output characteristic curved saturation region warping can be realized, and current normal output can be ensured; and meanwhile, the adverse influence caused by change of a threshold voltage of the thin film transistor due to the first electric field can be improved and compensated, the problem of threshold voltage drifting and the like can be solved, and the thin film transistor can recover to the working state when the active layer is not influenced by the first electric field, and even a higher level.

The invention discloses a composite gate floating field plate trench-gate AlGaN / GaN HEMT device structure and a manufacturing method thereof. The composite gate floating field plate trench-gate AlGaN / GaN HEMT device structure comprises a substrate, a GaN buffer layer, an AlN isolating layer, a GaN channel layer, an intrinsic AlGaN layer and an AlGaN doped layer which are sequentially compounded from bottom to top, wherein both ends on the AlGaN doped layer are respectively provided with a source and a drain, a LiF layer is arranged on the AlGaN doped layer at a position close to the drain, and a floating field plate is arranged on the LiF layer; an organic insulating dielectric layer is arranged between the LiF layer and the source, and a gate field plate is arranged on and beside the organic insulating dielectric layer; and a passivation layer is arranged in a bare area on the AlGaN doped layer. According to the trench-gate AlGaN / GaN HEMT device structure and the manufacturing method thereof, the breakdown voltage of a device is increased by utilizing the PTFE layer and the ITO gate field plate, the on resistance between the gate and the source of the device is decreased by utilizing the LiF layer and the Al floating field plate, and the breakdown voltage of the device is further increased by utilizing the gate field plate and the floating field plate.

The invention discloses a electrodeposition craft controlling device, which is characterized by the following: settling loading trough and conditioning tank in container; connecting with control board main units circuit; separating the loading trough to several station with frame; setting anode support and negative pole rotating device on each station; connecting the loading trough with groove outer filter and measuring pump through conduit line; connecting conditioning tank with measuring pump; connecting the control board main units with part circuit of temperature controller, acidness controller, master salt control, sedimentary deposit thickness control, negative pole rotating control, cycle filtering control through communication bus; adopting supplementary negative pole technology to negative rotating device; changing electric field distribution in the electrolytic solution. This device increases availability, which can be produced with large scale.

The invention discloses a depletion AlGaN / GaN MISHEMT high voltage device and a manufacturing method thereof. The device sequentially comprises a substrate, a GaN buffer layer, an intrinsic AlGaN (or GaN) channel layer, an AlN isolated layer and an AlGaN barrier layer from bottom to top; the AlGaN barrier layer is provided with a source, a grid and a drain, and an insulating medium layer is arranged between the grid and the AlGaN barrier layer; a linear AlGaN layer, a P-type GaN (or InGaN) epitaxial layer and a base are sequentially extended on the AlGaN barrier layer between the grid and the drain. The depletion AlGaN / GaN MISHEMT high voltage device and the manufacturing method have the advantages that when the device is switched on, the concentration of 2-dimensional electron gas in a first area and a second area between the grid and the drain is increased, and resistance is reduced; when the device is switched off, the concentration of the 2-dimensional electron gas in the first area is reduced, the concentration of the 2-dimensional electron gas in the second area is the same as that when the device is switched on, the width of a depletion area of the device is increased, electric field distribution is changed, and the breakdown voltage of the device is improved; an insulated gate structure prevents the grid from leaking current, and the performance of the device is improved.

The invention relates to a differential feed directional diagram reconfigurable dielectric patch antenna, which comprises a lower dielectric substrate, a metal reflection floor, an upper dielectric substrate and a dielectric patch which are sequentially stacked from bottom to top, and is characterized in that the metal reflection floor is provided with three parallel coupling gaps which are positioned right below the dielectric patch; each coupling slot is loaded with a PIN diode, and the lower layer of the lower dielectric substrate is provided with a microstrip feed line orthogonal to the coupling slots, and the microstrip feed line is used for receiving constant-amplitude and reverse-phase radio frequency signals to achieve differential feed. The feed structure of the antenna is controlled by switching the on-off state of the PIN diode, and the electric field distribution of the high-order mode TE12 can be effectively changed. Therefore, under the condition that the size of the antenna is not increased, five different wave beams can be obtained only by using three PIN diodes, and the five PIN diodes have good radiation performance.

The invention relates to a millimeter wave antenna module and an electronic device. The millimeter wave antenna module comprises a dielectric substrate, a grounding plate, a radiation patch, a feed structure and a conductor structure. The radiation patch generates a first current of the surface through feeding of the feeding structure, and meanwhile, coupled feeding excitation between the conductor structure and the radiation patch generates a second current perpendicular to the plane where the radiation patch is located. According to the millimeter wave antenna module, a capacitive loading conductor structure is introduced, so that the module has a relatively small size, and thinning of the antenna module is realized, and due to the first current and the second current, the electric fielddistribution of the module is changed, so that the module has a relatively wide beam width, a monopole mode of the feed structure is suppressed, and a differential mode of the radiation patch is enhanced, thereby suppressing a cross polarization component and increasing the isolation of a dual polarization port.

The invention discloses a transverse high-voltage metal oxide semiconductor (MOS) device, which is formed by burying an inversion buried layer into a drifting region of the device. The invention also discloses a method for manufacturing the transverse high-voltage MOS device, which comprises the following steps of: forming a first conduction type buried layer, a first conduction type epitaxial layer and a sacrifice oxide layer on a silicon substrate, and determining an implantation position of the inversion buried layer in the drifting region by adopting a photoetching process; performing second conduction type foreign ion implantation by taking photoresist as a mask to form an inversion impurity region; manufacturing a field oxide layer, and activating and boosting inversion impurities simultaneously in the thermal process of growing the field oxide layer to form the shallow inversion buried layer in the drifting region; and forming a channel region, a source oxide layer, a drain oxide layer, a gate oxide layer and a gate. Electric-field distribution in the drifting region can be changed, a surface electric field of a device can be reduced and withstand voltage performance and reliability can be improved.

The invention discloses a composite drain-based AlGaN / GaN MIS-HEMT (Metal-Insulator-Semiconductor High-Electron-Mobility Transistor) high-voltage device and a fabrication method thereof. The structure of the device comprises a substrate, a GaN buffer layer, an intrinsic GaN channel layer, an AlN isolating layer and an AlGaN barrier layer sequentially from the bottom up, a source, a grid and a composite drain are arranged on the AlGaN barrier layer, and an insulating medium layer is arranged between the grid and the AlGaN barrier layer; a linear AlGaN layer, a P-type GaN epitaxial layer and a base are sequentially epitaxially arranged on the top of the AlGaN barrier layer between the grid and the composite drain. The invention has the advantages that: when the device is switched on, the 2DEG (2-dimensional electron gas) concentration of a first region and a second region between the grid and the drain increases, and the resistance decreases; when the device is switched off, the 2DEG of the first region is reduced, the 2DEG of the second region is the same as when the device is switched on, the width of the depletion region of the device is increased, the distribution of an electric field is changed, and the breakdown voltage of the device is increased; the composite grid structure prevents the electric field peak from appearing at the edge of the drain, thus increasing the breakdown voltage of the device; an insulated grid structure prevents grid leakage current, and thereby the performance of the device is enhanced.

The invention discloses an NLDMOS device. A drift region is composed of a first N-type ion injection region which is formed in an N-type epitaxial layer, a first P-type ion injection region which is arranged on the bottom part of the first N-type ion injection region, and an N-type epitaxial layer. The first N-type ion injection region can greatly increase conduction current and reduce conduction resistance; and longitudinal exhausting can be performed on the first N-type ion injection region from the bottom part by the first P-type ion injection region so that electric field distribution in the drift region can be changed, a device surface electric field can be reduced, voltage-withstanding performance of the device can be enhanced and reduction of breakdown voltage of the device can be avoided when conduction current increases. The invention also discloses a manufacturing method for the NLDMOS device. The NLDMOS device is great in compatibility with an existing BCD technology platform, stable in technology and relatively low in cost.

The invention discloses a compact low-coupling extensible MIMO antenna based on an orthogonal mode, which comprises a microstrip line feed port, a coaxial line feed port, a grounding metal plate, a metal microstrip feed line, a dielectric plate and a rectangular radiation metal patch, wherein the dielectric plate is arranged above the grounding metal plate, and the rectangular radiation metal patch is attached to the dielectric plate; the rectangular radiation metal patch is connected to the microstrip line feed port through a metal microstrip feed line, and the rectangular radiation metal patch is connected to the coaxial line feed port through a coaxial probe. The invention further discloses a compact low-coupling extensible MIMO antenna system based on the orthogonal mode. The two excitation ports are utilized to excite the radiator at different positions to obtain two radiation modes with orthogonality so as to obtain a low coupling characteristic; and the antenna unit can be expanded into a compact low-coupling antenna array with any number of ports.

The invention discloses a groove charge compensation Schottky semiconductor device which is provided with a charge compensation structure. When the semiconductor device is connected with certain back bias voltage, a first conducting semiconductor material and a second conducting semiconductor material can form charge compensation and the back blocking property of a device is improved. A polycrystal semiconductor material is led into the upper portion of the groove so that strength of a peak electric field of Schottky junction surface can be reduced when the semiconductor device is connected with the back bias voltage and the back blocking property of the device is further improved. The invention further provides a manufacturing method of the groove charge compensation Schottky semiconductor device.

The invention relates to an MOSFET device with a silicon carbide inverted T-shaped marking layer structure and a preparation method thereof. The MOSFET device comprises a gate dielectric layer, a base region, a masking layer, a drift layer, a substrate layer, a drain electrode, a polycrystalline silicon layer, a grid electrode, a first source region, a second source region and a source electrode, wherein the base region is located at two sides of the gate dielectric layer; the masking layer is located on the lower surface of the gate dielectric layer; the drift layer is located on the lower surfaces of the base region and the masking layer; the substrate layer is located on the lower surface of the drift layer; the drain electrode is located on the surface of the substrate layer; the polycrystalline silicon layer is located on the inner surface of the gate dielectric layer; the grid electrode is located on the upper surface of the polycrystalline silicon layer; the first source region is located on the upper surface of a part of the base region; the second source region is located on the upper surface of the rest of the base region; and the source electrode is located on the upper surfaces of the first source region and the second source region. According to the MOSFET device, the electric field distribution at the corner of the gate dielectric layer is changed through the P+ type masking layer at the bottom of the trench gate, the electric field concentration at the corner of the device is reduced, the breakdown voltage of the device is improved, and the reliability of the device is improved.

The invention relates to an enhanced HEMT radio frequency device with a gate-drain composite step field plate structure, and a preparation method thereof. A p-GaN region is arranged on the surface of a barrier layer, a gate is arranged on the p-GaN region, a gate step field plate is arranged on the side wall, facing a drain, of the p-GaN region, and a drain step field plate is arranged on the side wall, facing the p-type GaN region, of the drain. The step field plate comprises at least two sub-field plates, and the width of each sub-field plate is gradually reduced from top to bottom. Through the arrangement of the gate-drain composite step field plate, the electric field distribution of the side, close to the drain, of the gate and the electric field distribution of the side, close to the gate, of the drain are changed, the average electric field intensity between the gate and the drain is improved, and the voltage withstanding performance and reliability of the device are improved; and the p-GaN region is arranged below the gate, and the enhanced HEMT radio frequency device has smaller gate-drain capacitance and shows higher cut-off frequency in combination with the gate-drain composite step field plate structure.

The invention relates to a field stop type insulated gate bipolar transistor and a manufacturing method of the field stop type insulated gate bipolar transistor. The manufacturing method of the field stop type insulated gate bipolar transistor sequentially comprises the following steps of (1) forming a buffer layer, wherein an N+ buffer layer is formed on the obverse side of a wafer; (2) forming an N-type device layer, wherein the N-type device layer is formed on the N+ buffer layer through epitaxial growth; (3) forming an IGBT structure, wherein an obverse side structure of the IGBT is formed on the N-type device layer; (4) forming a collector, wherein the collector is formed on the reverse side of the wafer. According to the manufacturing method of the field stop type insulated gate bipolar transistor, the ultra-thin field stop type insulated gate bipolar transistor can be manufactured without sheet processing equipment, the manufacturing method of the field stop type insulated gate bipolar transistor has the advantages of being simple in technology, high in efficiency and low in cost, and the field stop type insulated gate bipolar transistor manufactured through the manufacturing method of the field stop type insulated gate bipolar transistor has the lower conduction voltage drop and the lower application temperature.

The invention discloses an AlGaN / GaN high-voltage device based on a super junction leakage field plate and a manufacturing method thereof. The high-voltage device structurally comprises a substrate, a GaN buffer layer, an intrinsic GaN (or AlGaN) channel layer, an A1N isolation layer and an A1GaN barrier layer from bottom to top. A source electrode, a grid electrode and a composite drain electrode are arranged on the A1GaN barrier layer. The composite drain electrode comprises a drain electrode and a drain electrode field plate. A linear A1GaN layer, a grid source field plate, a P-type GaN (or InGaN) layer and a base electrode are arranged between grid sources and between the grid leaks. The AlGaN / GaN high-voltage device based on the super junction leakage field plate has the advantages that the 2DEG concentration of a first area, the 2DEG concentration of a second area, and the 2DEG concentration of a third area are increased at the device breakover time, so that resistance is reduced, and device breakover resistance is reduced; the 2DEG concentration of the first area, the 2DEG concentration of the second area, and the 2DEG concentration of the third area at device cut-off time are the same as the 2DEG concentration of the first area, the 2DEG concentration of the second area, and the 2DEG concentration of the third area at the device breakover time, so that the width of an device exhausted area is increased, the distribution of an electric field is changed, and device breakdown voltage is increased; a composite drain electrode structure and a grid source field plate ensure that electric field peak value cannot occur at the edge of the drain electrode and the boundary of a source close to a grid, so that the breakdown voltage is increased.

The invention discloses a super-junction-based AlGaN / GaN MIS-HEMT (Metal-Insulator-Semiconductor High-Electron-Mobility Transistor) high-voltage device and a fabrication method thereof. The structure of the high-voltage device comprises a substrate, a GaN buffer layer, an intrinsic GaN (or AlGaN) channel layer, an AlN isolating layer and an AlGaN barrier layer sequentially from the bottom up, a source, a grid, a drain, a linear AlGaN layer, a grid-source field plate, a P-type GaN (or InGaN) layer and a base are arranged on the AlGaN barrier layer, and an insulating medium layer is also arranged between the grid and the AlGaN barrier layer. The invention has the advantages that: when the device is switched on, the 2DEG (2-dimensional electron gas) concentration of a first region, a second region and a fourth region increases, the resistance decreases, and thereby the purpose of decreasing the on resistance of the device is achieved; when the device is switched off, the 2DEG of the first region is reduced, the 2DEG of the second region and a third region is the same as that when the device is switched on, the width of the depletion region of the device is increased, and thereby the purpose of increasing the breakdown voltage of the device is achieved; the grid-source filed plate ensures that the electric field peak cannot appear at the boundary where the grid is close to the source, thus increasing the breakdown voltage; an insulated grid structure prevents grid leakage current, and thereby the performance of the device is enhanced.

The invention discloses a method for controlling a field emission electronic divergence angle by using a nano carbon tube. The method comprises the steps of: applying a voltage between the carbon tube and a positive pole to form electron field emission by using the multi-wall nano carbon tube as an electron source of field emission; and changing the electric-field distribution of a port of the nano carbon tube through regulating and selecting the length of the extracted outer wall of the nano carbon tube and the voltage applied to the nano carbon tube, controlling the field emission electronic divergence angle, collimation or convergence, and controlling the focusing distance of an electron beam. According to the invention, under the condition without any additional focusing device, the divergence, focusing or collimation of field-emitted electronics is controlled.

The invention discloses an anti-radiation MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) structure having a P-type island buffer layer structure. The anti-radiation MOSFET structure is characterized in that: a buffer layer with a P-type island structure is added between a substrate and a drift region of a conventional power MOSFET structure; the concentration of the buffer layer is between a doping concentration of the drift region and a doping concentration of the substrate, the concentrate and the size of the P-type island are controlled strictly, so that an unipolar mode is ensured when a device is in a conducting state; at the same time, when the device is in a blocking state, the P-type island can adjust an electric field adjacent to a buffer layer-substrate high-low junction, so as to improve a feedback effect induced by a parasitic BJT (Bipolar Junction Transistor) when the device is subjected to single particle radiation, thereby raising an SEB (Single Event Burnout) threshold. The invention provides a novel structure capable of improving an anti-SEB capacity for a spacial power MOSFET.

The invention provides a gallium nitride lateral transistor with an AlGaN / GaN heterojunction and a manufacturing method of the gallium nitride lateral transistor. A partial drift region of the transistor is an AlGaN / GaN heterojunction; the AlGaN / GaN heterojunction forms high-density two-dimensional electron gas (2DEG) at the interface of the heterojunction through spontaneous polarization and piezoelectric polarization effects; and the two-dimensional electron gas has very high mobility, so that the novel gallium nitride lateral transistor with the AlGaN / GaN heterojunction has very low on-resistance. When the transistor is turned off, the 2DEG is exhausted; and meanwhile, a new electric field peak is introduced to the surface of the transistor, so that the peak electric field at the edge of the gate of the lateral transistor is reduced, and the breakdown voltage of the transistor is improved.

The invention discloses a power cable fault simulation device and method utilizing electric arc ignition, and aims to solve technical problems that a requirement of a power cable fault simulation teston test equipment is too high and the test is difficult to carry out in a general laboratory in the prior art. The method comprises the steps that two electrodes are fixedly installed at the two endsof a power cable, a plurality of conductive areas are arranged on the area between the two electrodes at equal intervals through a conductive mixture, the electrodes are connected into a pre-built high-voltage test platform, and an electric arc is generated on the power cable by adjusting the voltage. According to the invention, the gap between the conductive areas can be broken down under a lowvoltage, a continuous and stable arc is generated, and a fault simulation test of igniting the cable by the fault arc is realized.

The invention discloses an array tubular anode assisted laser electrochemical combined machining method and device based on a variable electric field, and relates to the field of micromachining in a non-traditional machining technology. According to the method, an electrochemical loop is formed between tubular anodes and a cathode substrate, the input voltage of a single tubular anode can be adjusted through a voltage adjusting controller, laser penetrates through a liquid crystal mask plate to enter the tubular anodes distributed in an array mode, and a computer controls the liquid crystal mask plate to display a gray level image; the outline of the laser reaching the processing deposition area is the same as the image on the liquid crystal mask plate; in a laser irradiation micro-area, due to the heat effect and the force effect of laser, and the electro-deposition rate is greatly increased; and machining of the whole micro parts or array micro structures is achieved through the array of the tubular anodes. The method is suitable for machining of the micro parts or the array micro structures with complex continuous structures, and is applied to the machining fields of micro manufacturing of micro machinery, micro electro mechanical systems, metal forms, medical treatment, electronics, spaceflight and the like.

The invention discloses a novel cavel combination gap. The novel cavel combination gap comprises an H-shaped steel base, a first base sliding block, a second base sliding block, a third base sliding block, a cavel gap combination, an adjustable supporting column, a metal plate and a metal plate supporting seat. The first base sliding block, the second base sliding block and the third base sliding block are respectively embedded in the H-shaped steel base, and can slide along the H-shaped steel base; a first supporting column insulator is carried by the first base sliding block; the second base sliding block is used for supporting a second supporting column insulator; the metal plate is fixed to the second supporting column insulator through the metal plate supporting seat; the third base sliding block is used for carrying the adjustable supporting column; the cavel gap combination comprises a first insulator supporting column, a first cavel electrode arranged on the first insulator supporting column, the adjustable supporting column and a second cavel electrode arranged on the adjustable supporting column. Due to the implement of the novel cavel combination gap, the metal plate is additionally arranged between the cavel electrodes, and accordingly gap thunder and lightning withstand voltages of the gap under the same gap length condition can be increased and the power-frequency breakdown voltages of the gap can be reduced.

The invention discloses a double 90-degree deflection quadrupole plasma mass spectrometer in the technical field of plasma mass spectrometers. Double 90-degree ion deflection focusing assemblies are introduced, so that positive ions pass through a first 90-degree deflection focusing assembly after passing through an interception cone and are separated from electrons and neutral particles in a large amount of ICP ; the separated ions pass through a collision pool and then pass through a second 90-degree deflection focusing assembly, to-be-detected positive ions are separated from interference components newly introduced into the collision pool, and finally the to-be-detected positive ions reach a quadrupole mass analyzer and a detection system for detection of the to-be-detected ions. According to the invention, background noise of instruments is greatly reduced, irrelevant components cannot enter a precise quadrupole separation system, so that the quadrupole separation system and a detection system are not polluted, the device does not need to be frequently cleaned and maintained, long-term reliability of an instrument is ensured, and great convenience is brought to a user.

The invention provides a vertical field effect transistor with AlGaN / GaN heterojunction and a manufacturing method thereof. The device has two characteristics: one is that the two-dimensional electron gas formed by the AlGaN / GaN heterojunction is used to form a lateral low-resistance conductive channel of the device; the other is that a vertical low-resistance conductive channel is introduced in the drift region of the device. When the device is turned off, due to the introduction of new charges by the two-dimensional electron gas, the electric field distribution in the device is changed, the breakdown voltage is increased, and the contradictory relationship between the breakdown voltage and the concentration of the drift region is alleviated. When the device is turned on, since the new conductive channel changes the current distribution of the traditional vertical field effect transistor, a lower on-resistance can be achieved even when the concentration of the drift region is lower. Combining the above advantages, the present invention has higher withstand voltage and lower conduction loss under the condition of the same drift region length.

The invention provides an AlGaN / GaN heterojunction vertical type field effect transistor with a P type shielding layer and a manufacturing method of the field effect transistor. The device is mainly characterized in that the P type shielding layer is adopted, and meanwhile, a current low-resistance conducting channel is formed by virtue of the two-dimensional electron gas and a special drift region of the AlGaN / GaN heterojunction. Due to the effect of the P type shielding layer, the concentration of the channel can be reduced to obtain a proper threshold voltage. When the device is switched off, the P type shielding layer effectively reduces the peak electric field in a gate dielectric layer, and the reliability of the device is improved; the two-dimensional electron gas introduces new charges, so that the electric field distribution in the device is changed, the breakdown voltage is improved, and meanwhile, the contradiction between the breakdown voltage and the drift region concentration is weakened. When the device is conducted, the current distribution of the traditional vertical type field effect transistor is changed due to the new conductive channel, so that the relatively low on resistance can be realized under the condition that the concentration of the drift region is relatively low.

The invention discloses a high-gain antenna with a microstrip patch antenna loaded with periodic structure, which comprises a dielectric plate, a metal radiator, a metal floor and a periodic leaky wave structure, wherein the structural parameters of the periodic leaky wave structure are set as determined values in an adjustable or solidified manner; and at least one frequency point generated by the periodic leaky wave structure is enabled to be the same as a resonance point of the antenna. The periodic leaky wave structure is embedded in the dielectric plate of the microstrip patch antenna, and the effective dielectric constant of the dielectric plate is changed, so that the electric field distribution of the metal radiator is changed, a relatively high gain can be achieved, and the antenna can obtain a high gain characteristic by adjusting the periodic leaky wave structure. In addition, the high-gain antenna with the microstrip patch antenna loaded with the periodic structure is of a planar structure, the structure is simple, and batch processing and production are facilitated. The high-gain antenna is applied to the technical field of wireless communication.

The invention discloses a special shielding device for the routine test of a lightning arrester, which comprises a ring-shaped insulating plate, and the said ring-shaped insulating plates are two, namely a large ring plate and a small ring plate, and the diameters of the inner rings of the two are equal , the end faces of the large ring plate and the small ring plate are arranged parallel to each other and a supporting ring plate is arranged between them, and the large ring plate, the small ring plate and the supporting ring plate form an annular inner cavity, which can The insulator is clamped and fixed, and the inner ring surface of the large ring plate and the small ring plate is respectively provided with an insulating layer and a metal layer. The large ring plate, the small ring plate and the supporting ring plate are all split combined structures, respectively. Two split bodies are combined, and a guiding mechanism and a connecting mechanism are arranged between the two split bodies. The invention greatly improves the influence of external unfavorable factors on the data during the test, not only ensures the accuracy of the data, but also saves manpower, shortens the working time, greatly improves the working efficiency, and provides a guarantee for the safe operation of the power grid equipment .