Super-junction-based AlGaN/GaN MIS-HEMT (Metal-Insulator-Semiconductor High-Electron-Mobility Transistor) high-voltage device and fabrication method thereof

Abstract

The invention discloses a super-junction-based AlGaN / GaN MIS-HEMT (Metal-Insulator-Semiconductor High-Electron-Mobility Transistor) high-voltage device and a fabrication method thereof. The structure of the high-voltage device comprises a substrate, a GaN buffer layer, an intrinsic GaN (or AlGaN) channel layer, an AlN isolating layer and an AlGaN barrier layer sequentially from the bottom up, a source, a grid, a drain, a linear AlGaN layer, a grid-source field plate, a P-type GaN (or InGaN) layer and a base are arranged on the AlGaN barrier layer, and an insulating medium layer is also arranged between the grid and the AlGaN barrier layer. The invention has the advantages that: when the device is switched on, the 2DEG (2-dimensional electron gas) concentration of a first region, a second region and a fourth region increases, the resistance decreases, and thereby the purpose of decreasing the on resistance of the device is achieved; when the device is switched off, the 2DEG of the first region is reduced, the 2DEG of the second region and a third region is the same as that when the device is switched on, the width of the depletion region of the device is increased, and thereby the purpose of increasing the breakdown voltage of the device is achieved; the grid-source filed plate ensures that the electric field peak cannot appear at the boundary where the grid is close to the source, thus increasing the breakdown voltage; an insulated grid structure prevents grid leakage current, and thereby the performance of the device is enhanced.

Description

technical field [0001] The invention relates to a high-voltage device and a manufacturing method thereof, in particular to a superjunction-based AlGaN / GaN MISHEMT high-voltage, low-on-resistance high-voltage device and a manufacturing method thereof, which can be used to manufacture high-voltage and low-on-resistance AlGaN / GaN A high electron mobility transistor belongs to the technical field of microelectronics. Background technique [0002] In recent years, the third-generation wide bandgap semiconductors represented by SiC and GaN have the characteristics of large bandgap, high breakdown electric field, high thermal conductivity, high saturated electron velocity and high concentration of two-dimensional electron gas at the heterojunction interface. Widespread concern. In theory, high electron mobility transistor HEMT, light emitting diode LED, laser diode LD and other devices made of these materials have obvious superior characteristics than existing devices, so in recen...

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Problems solved by technology

[0006] However, the high-voltage devices with the above two structures all have the disadvantage of large on-resistance

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