AlGaN/GaN heterojunction vertical type field effect transistor with P type shielding layer and manufacturing method of field effect transistor
A field effect transistor, vertical field effect technology, applied in the field of power semiconductor devices, can solve the problems of oxide layer cracking or even breakdown, device life and reliability reduction, etc., to change current distribution, improve reliability, and improve breakdown voltage. Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0047] The present invention will be described below by taking an N-channel AlGaN / GaN heterojunction vertical field effect transistor with a P-type shielding layer as an example in conjunction with the accompanying drawings.
[0048] like figure 1 As shown, in the structure of this embodiment, the drift region is divided into two parts: the lightly doped drift region 11 epitaxially grown on the substrate and the heavily doped drift region 14 formed by ion implantation in the middle of the lightly doped drift region. Corresponding to the middle part of the device, an ALGaN layer 5 is heteroepitaxially grown on the surface of the heavily doped drift region 14 and the adjacent lightly doped drift region 10 on both sides; the surface of the ALGaN layer is provided with an active dielectric layer 7 covering the interface of the 2DEG ; The three sources are connected together. Using the AlGaN / GaN heterojunction as part of the conductive channel improves the contradictory relationsh...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com