Field stop type insulated gate bipolar transistor and manufacturing method thereof

Abstract

The invention relates to a field stop type insulated gate bipolar transistor and a manufacturing method of the field stop type insulated gate bipolar transistor. The manufacturing method of the field stop type insulated gate bipolar transistor sequentially comprises the following steps of (1) forming a buffer layer, wherein an N+ buffer layer is formed on the obverse side of a wafer; (2) forming an N-type device layer, wherein the N-type device layer is formed on the N+ buffer layer through epitaxial growth; (3) forming an IGBT structure, wherein an obverse side structure of the IGBT is formed on the N-type device layer; (4) forming a collector, wherein the collector is formed on the reverse side of the wafer. According to the manufacturing method of the field stop type insulated gate bipolar transistor, the ultra-thin field stop type insulated gate bipolar transistor can be manufactured without sheet processing equipment, the manufacturing method of the field stop type insulated gate bipolar transistor has the advantages of being simple in technology, high in efficiency and low in cost, and the field stop type insulated gate bipolar transistor manufactured through the manufacturing method of the field stop type insulated gate bipolar transistor has the lower conduction voltage drop and the lower application temperature.

Description

technical field [0001] The present invention relates to the field of integrated circuit manufacturing, in particular to a method for manufacturing a Field Stop (Field Stop, FS for short) insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT for short) and a field stop manufactured by the method. Discontinued insulated gate bipolar transistor. Background technique [0002] IGBT is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), which has both high input impedance of MOSFET and low conduction voltage drop of GTR. The advantages. The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, w...

AI Technical Summary

Problems solved by technology

However, the general 600V / 1200V FS type IGBT is an ultra-thin sheet. At present, there is no domestic company that can manufacture it. However, some large foreign companies may use a full-line thin-sheet circulation technology, so the cost is very high.

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