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Depletion AlGaN/GaN MISHEMT high voltage device and manufacturing method thereof

A high-voltage device and depletion-type technology, which is applied in the field of microelectronics, can solve the problems of large on-resistance, etc., and achieve the effects of increasing breakdown voltage, changing electric field distribution, and improving device performance

Inactive Publication Date: 2014-04-23
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the high-voltage devices with the above two structures all have the disadvantage of large on-resistance

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  • Depletion AlGaN/GaN MISHEMT high voltage device and manufacturing method thereof
  • Depletion AlGaN/GaN MISHEMT high voltage device and manufacturing method thereof

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Embodiment Construction

[0038] The present invention will be specifically introduced below in conjunction with the accompanying drawings and specific embodiments.

[0039] First, the structure of the depleted AlGaN / GaN MISHEMT high voltage device of the present invention is introduced.

[0040] refer to figure 1 , the depletion mode AlGaN / GaN MISHEMT high-voltage device of the present invention, its structure comprises from bottom to top: substrate 1, GaN buffer layer 2, intrinsic GaN channel layer 3 (intrinsic GaN channel layer 3 can also be used AlGaN channel layer replacement), AlN isolation layer 4 and AlGaN barrier layer 5, AlGaN barrier layer 5 is composed of lower i-type AlGaN layer 501 and upper n-type AlGaN layer 502, wherein, the upper edge of AlGaN barrier layer 5 In the horizontal direction, there are: source 6, gate 7 and drain 8, and an insulating dielectric layer 9 is arranged between the gate 7 and the AlGaN barrier layer 5. The insulating dielectric layer 9 is preferably made of SiN...

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Abstract

The invention discloses a depletion AlGaN / GaN MISHEMT high voltage device and a manufacturing method thereof. The device sequentially comprises a substrate, a GaN buffer layer, an intrinsic AlGaN (or GaN) channel layer, an AlN isolated layer and an AlGaN barrier layer from bottom to top; the AlGaN barrier layer is provided with a source, a grid and a drain, and an insulating medium layer is arranged between the grid and the AlGaN barrier layer; a linear AlGaN layer, a P-type GaN (or InGaN) epitaxial layer and a base are sequentially extended on the AlGaN barrier layer between the grid and the drain. The depletion AlGaN / GaN MISHEMT high voltage device and the manufacturing method have the advantages that when the device is switched on, the concentration of 2-dimensional electron gas in a first area and a second area between the grid and the drain is increased, and resistance is reduced; when the device is switched off, the concentration of the 2-dimensional electron gas in the first area is reduced, the concentration of the 2-dimensional electron gas in the second area is the same as that when the device is switched on, the width of a depletion area of the device is increased, electric field distribution is changed, and the breakdown voltage of the device is improved; an insulated gate structure prevents the grid from leaking current, and the performance of the device is improved.

Description

technical field [0001] The invention relates to a high-voltage device and a manufacturing method thereof, in particular to a depletion-type AlGaN / GaN high-voltage, low-on-resistance high-voltage device and a manufacturing method thereof, which can be used to manufacture high-voltage and low-on-resistance AlGaN / GaN MISHEMT high An electron mobility transistor belongs to the technical field of microelectronics. Background technique [0002] In recent years, the third-generation wide bandgap semiconductors represented by SiC and GaN have the characteristics of large bandgap, high breakdown electric field, high thermal conductivity, high saturated electron velocity and high concentration of two-dimensional electron gas at the heterojunction interface. Widespread concern. In theory, high electron mobility transistor HEMT, light emitting diode LED, laser diode LD and other devices made of these materials have obvious superior characteristics than existing devices, so in recent ye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/335
CPCH01L29/0634H01L29/42356H01L29/66462H01L29/7786
Inventor 冯倩杜锴杜鸣张春福梁日泉郝跃
Owner XIDIAN UNIV
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