The invention provides a production method of a graphene field-effect transistor. The production method comprises the steps as follows: a semiconductor substrate with a silicon dioxide layer formed on the surface is provided; a floating potential alternating current dielectrophoresis structure is formed and comprises a first electrode part, a second electrode part and a third electrode part, wherein the first electrode part at least comprises a first sub-electrode, the second electrode part at least comprises a second sub-electrode and a sub-electrode connecting wire, the third electrode part at least comprises a third sub-electrode, the sub-electrode connecting wire is connected with each second sub-electrode in a penetrating manner, and top ends of each second sub-electrode and each third sub-electrode are in one-to-one correspondence; a carbon nanotube suspension is formed; a carbon nanotube is connected between each second sub-electrode and each third sub-electrode which are opposite to each other by utilizing an alternating current dielectrophoresis technology; each carbon nanotube is fixed; metal layers are formed by utilizing a sputtering technology; and metal is removed and graphene nanoribbons are formed. According to the production method, the perfect alignment of single carbon nanotubes is realized in a batch manner, and single-walled carbon nanotubes are cut into graphene nanoribbons, so that the graphene nanoribbons can present typical semiconductor characteristics.