Preparation method of graphene field effect transistor

Abstract

The invention belongs to the technical field of field effect transistors, and particularly relates to a preparation method of a graphene field effect transistor. The method comprises the steps of: providing a substrate through which infrared rays can penetrate; carrying out chemical vapor deposition on graphene to form a graphene channel layer; constructing a pattern on the graphene channel layer to form a grid medium layer; and constructing a pattern on the grid medium layer to form a grid end, wherein the graphene channel layer generates a photoconductive effect operatively under the radiation of the infrared rays so as to lead the electric characteristic of the graphene field effect transistor to be changed. In the preparation method, the technique is simple in process and is compatible with an integrated circuit manufacturing technique, the prepared field effect transistor has the advantages that the sensitivity is high, the power consumption is low, the infrared detection function is ultra-light and ultra-stable, the infrared absorbing belt is wide and the adjustability can be achieved according to the practical application needs.

Description

technical field [0001] The invention belongs to the technical field of field effect transistors, in particular to a preparation method of graphene field effect transistors. Background technique [0002] With the continuous extension and depth of Moore's Law, the device size of silicon-based integrated circuits is getting closer and closer to the physical limit, and the international semiconductor technology community has proposed Beyond Silicon (Beyond Silicon) technology, among which graphene is considered to be the The most promising material to replace silicon. [0003] Graphene is a two-dimensional crystal composed of carbon atoms on a single-layer honeycomb crystal lattice, and the thickness of a single-layer graphite is about 0.35 nanometers. figure 1 Shown is a schematic diagram of the basic structure of graphene. Currently, graphite with less than ten layers is regarded as graphene. Because graphene has superconducting properties, high-strength mechanical properti...

AI Technical Summary

Problems solved by technology

In the prior art, infrared detectors of various bands, whether it is InGaAs-based, InSb-based, or quantum well-type detection QWIP and mercury cadmium telluride (MCT)-based, all need to work at low temperature and require an additional refrigeration system, which limits improve its application and increase the application cost

Moreover, their production process is complicated, the production process is highly toxic, and it is not easy to be compatible with the preparation process of large-scale integrated circuits

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