132 results about "Furnace anneal" patented technology

A method is provided, the method comprising forming a first dielectric layer above a first structure layer, forming a first opening in the first dielectric layer, and forming a first copper structure above the first dielectric layer and in the first opening. The method also comprises annealing the first copper structure using one of a furnace anneal process performed at a temperature ranging from approximately 100-400° C. for a time ranging from approximately 10-90 minutes and a rapid thermal anneal (RTA) process performed at a temperature ranging from approximately 100-400° C. for a time ranging from approximately 10-180 seconds.

(issue) It is an issue to suppress variation in threshold voltage due to deterioration in shot channel characteristics and improve the slow trap characteristics of the MOS transistor for suppressing variation in threshold voltage of the transistor for a long-term use.(means for solving the issue) fluorine ions are implanted into a surface of a silicon substrate 1 but a peripheral region of a gate electrode on a p-MOS formation region. A first heat treatment is carried out for removing inter-lattice silicon atoms generated upon ion-implantation. Thereafter, a second heat treatment is carried out for diffusing fluorine ions into a region directly under the gate electrode. The first heat treatment is a lamp anneal such as RTA, and the second heat treatment is a furnace anneal.

An IrOx film is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the PLZT film is promoted, and annealing treatment is performed for the IrOx film. Thereafter, furnace annealing at 600° C. or higher, for example, 650° C. is performed for 60 minutes in, for example, an O2 atmosphere as recovering annealing to recover oxygen deficiency in the PLZT film. Subsequently, an IrO2 film is formed as a second conductive oxide film on the IrOx film by a sputtering method.

This invention relates to a process of producing 450MPa cold rolled steel magnet. It includes steps as follows: (1)to heat plate body to 1160-1230DEG C;(2)hot rolling steps: the start rolling temperature 1070-1130DEG C,end rolling temperature 870-930DEG C,cooling to 620-680DEG C for coiling. (3)cooling to 70DEG C below for acid picking. (4)cold rolling steps; (5) bell furnace anneal; controlling temperature 620-680DEG C (6) temper rolling, then the products. Account to weight the main chemical composition is: C 0.06-0.1%,Si 0.10-0.30%,Mn 0.80-1.20%,Nb 0.025-0.045 %,Ti:0.025-0.045%,Als 0.02-0.07%,P <=0.025%,S <=0.010%, Fe the rest.

The invention discloses a 5182 aluminum alloy. The aluminum alloy is composed of Si, Fe, Cu, Mn, Mg, Cr, Zn, Ti, and remaining Al and some inevitable impurities. A preparing technology of a tank cover material strip through the 5182 aluminum alloy comprises the steps of firstly, taking of the 5182 aluminum alloy; secondly, hot rolling, cooling and obtaining a blank for cold rolling; thirdly, primary cold rolling, and obtaining a cold-rolled intermediate product, wherein the total deformation amount ranges from 66% to 78%; fourthly, air cushion furnace annealing; fifthly, secondary cold rolling, wherein the total deformation amount ranges from 71% to 76%; sixthly, stretch bending and correcting. According to the 5182 aluminum alloy and the preparing technology of the tank cover material strip through the 5182 aluminum alloy, through high alloying, the alloy strength is improved, meanwhile, the content of Fe and Si is reasonably controlled, and bank mark generation is restrained; continuous air cushion furnace annealing is adopted, through high-temperature short-time annealing, the grains are adjusted and controlled, uniformity of the strip performance is improved, and meanwhile the strip surface quality is ensured.

There is provided a method in which a TFT with superior electrical characteristics is manufactured and a high performance semiconductor device is realized by assembling a circuit with the TFT. The method of manufacturing the semiconductor device includes: a step of forming a crystal-containing semiconductor film by carrying out a thermal annealing to a semiconductor film; a step of carrying out an oxidizing treatment to the crystal-containing semiconductor film; a step of carrying out a laser annealing treatment to the crystal-containing semiconductor film after the oxidizing treatment has been carried out; and a step of carrying out a furnace annealing treatment to the crystal-containing semiconductor film after the laser annealing. The laser annealing treatment is carried out with an energy density of 250 to 5000 mJ / cm2.

The invention relates to a production method of an anti-aging tinning black plate with hardness HR30Tm of 55+ / -4 and discloses a production method of an anti-aging tinning black plate. The method comprises the following steps: smelting: adopting KR desulfurization, smelting in a converter, RH vacuum treatment and continuous casting; hot rolling: carrying out the hot rolling of a continuous castingblank comprising the following chemical components in percentage by weight: C: 0.02-0.06, Si: smaller than or equal to 0.025, Mn: smaller than or equal to 0.50, P: smaller than or equal to 0.020, S:smaller than or equal to 0.030, Als: 0.005-0.040, Ti: 0.005-0.020, N: smaller than or equal to 0.005, the balance of Fe and inevitable impurities; and carrying out pickling, cold rolling, electrolyticdegreasing, full-hydrogen bell furnace annealing and leveling of a tinning black plate with hardness HR30Tm of 51-59. The invention has the advantages of small production control difficulty and low cost and hardness value, is beneficial for users to use the anti-aging tinning black plate to manufacture deep drawing cans and can lids with complicated deformation, lessens the canning defects of cracks, crazing slip lines or corded bent surfaces, and the like and improves the canning yield rate and the canning qualified rate.

Single-crystal devices and a method for forming semiconductor film single-crystal domains are provided. The method comprises: forming a substrate, such as glass or Si; forming an insulator film overlying the substrate; forming a single-crystal seed overlying the substrate and insulator; forming an amorphous film overlying the seed; annealing the amorphous film; and, forming a single-crystal domain in the film responsive to the single-crystal seed. The annealing technique can be (conventional) laser annealing, a laser induced lateral growth (LiLAC) process, or conventional furnace annealing. In some aspects forming a single-crystal seed includes forming a nanowire or a self assembled monolayer (SAM). For example, a Si nanowire can be formed having a crystallographic orientation of <110> or <100>. When, the seed has a <100> crystallographic orientation, then an n-type TFT can be formed. Likewise, when a single-crystal seed has a <110> crystallographic orientation, a p-type TFT can be formed.

The invention relates to a combined cover annealing method and annealing furnace device thereof. At least two cover furnaces are installed in series, protecting gas central heater and matched feeding device are provided, using the heated protecting gas, preheat, heat, heat-insulate and cool the annealing material inside of the protective cover, the protecting gas circularly flows in the cover furnace during the annealing process, the excessive heat at high temperature stage is transferred to the next low temperature stage, the low temperature protecting gas returns to the protecting gas heater after the cooling stage, the turbid gas returns to the protecting gas system for used after filtering. Compared with current technology, the advantages of the invention reside in: the heat during the annealing process is recycling, which saves 30% to 40% of energy; no heating cover or cooling cover is used during the annealing process, heat or cool material inside the protective cover by protecting gas, which simplifies the operation process, saves equipment cost and operation expense, and the annealed material has good quality.

The invention discloses a groove filling method. The width of a groove is above 1 mu m and the depth of the groove is above 3 mu m. The method comprises the following steps: step 1, using TEOS as a raw material to deposit a layer of SiO2 on the surface of a silicon slice with a groove by an LPCVD process; step 2, using TEOS and O3 as raw materials to deposit a layer of SiO2 again on the surface of the silicon slice by an APCVD or SACVD process; and step 3, using TEOS and O2 as raw materials to deposit a layer of SiO2 again on the surface of the silicon slice by the PECVD process. After the groove is filled according to the method of the invention, fillers in the groove are of a multilayer film structure; and the multilayer film structure is not cracked in a subsequent high-temperature furnace annealing process.

The invention discloses a 390MPa grade cold-rolled phosphorus-containing IF high-strength steel strip and an LF-RH duplex production process thereof, and belongs to the technical field of production of interstitial-free steel. The steel strip comprises, by weight, less than or equal to 0.0050% of C, 0.030-0.055% of Si, 0.55-0.60% of Mn, 0.055-0.070% of P, less than or equal to 0.008% of S, 0.020-0.040% of Als, 0.035-0.050% of Nb, 0.015-0.035% of Ti, 0.0005-0.0010% of B and the balance Fe, Ca, Cr and inevitable trace elements. The production process flow comprises the steps of blast furnace hotmetal smelting, converter molten steel smelting, LF molten steel refining, RH molten steel refining, CSP sheet billet continuous casting and rolling, pickling cold continuous rolling, cover furnace annealing, leveling and inspection, packaging and storage. The composition design thoughts of micro-carbon smelting, [Nb, Ti] microalloying and solid solution strengthening of P and Mn are adopted, the390MPa grade cold-rolled phosphorus-containing IF high-strength steel strip with stable chemical compositions and stable mechanical properties is obtained through an LF-RH duplex refining process, hot rolling, cold rolling and an annealing process, the production cycle is short, the production cost is low, the steel strip is stable in quality, and the requirements of the automobile industry on the high-strength steel strip can be met.

The invention discloses a production method for ultra-thin cold-rolled enamelled steel strips. The production method is characterized in that the ultra-thin cold-rolled enamelled steel strips have thicknesses of 0.18-0.20mm, and are obtained through the steps of carrying out hot-rolling production for cold-rolled materials, chlorohydric acid pickling, primary cold-rolling, primary intermediate annealing, and secondary cold-rolling to prepare ultra-thin cold and hard steel strips, and then carrying out smoothing and texturing, rewinding and tension losing, secondary intermediate annealing, and strip shape straightening. According to the method, the products have excellent deep drawing properties, and have no fish-scaling phenomenon, and moreover, with the adoption of a 950mm single-stand six-roll reversible cold-rolling mill, single-stand smoothing and texturing, severe-convection full-hydrogen bright bell-type annealing furnace annealing, the equipment is simplified, and the products achieve high-accuracy and ultra-thin requirements; the surfaces are smooth, and free from bonding, chromatic aberration, black spots, dots, oil stain and other defects; and the production method achieves the quality requirements of ultra-thin deep-drawn cold-rolled enamelled steel strips, is suitable for the fields of kitchen sanitary ware and ovens, water heater liners, decoration panels and the like, and has a broad market prospect.

A method for fabricating transistor structures for DRAM semiconductor components includes forming gate conductor structures in a cell array of a DRAM semiconductor component and covering the structures with a spacer liner. The gate conductor structures lie on a silicon semiconductor substrate. A masked spacer etch produces a spacer mask with horizontal sections and vertical spacer structures from the spacer liner for aligning implantation steps and for self-aligned formation of silicide structures at the surface of the semiconductor substrate. A CB contact implantation step is provided prior to the filling of trenches between the gate conductor structures with dielectric silicate glass fillings, and this obviates the need for an isolated high-temperature activation anneal for the CB contact implantation as well as reducing the thermal stresses on regions of the semiconductor substrate which have already been doped. A reflow heating step for partially melting the silicate glass is controlled as a final furnace anneal for annealing lattice defects in the semiconductor substrate. The contact resistance of a bit contact structure is lowered, while at the same time the thermal stresses are reduced.

The invention discloses a production method of an aluminum alloy base material used for LED (light emitting diode) television sets. During batching, on the basis of existing manufacturing components of 3104 aluminum alloy, the method readjusts the mass fractions of each chemical component in aluminum alloy raw materials, and adopts a box-type furnace annealing process during annealing treatment, as well as adjusts an annealing system so as to make the prepared aluminum alloy base material have stable mechanical properties and a surface with a uniform color. Meanwhile, the strength and elongation percentage of the aluminum alloy base material are improved. The method of the invention employs a unique stretching, bending and straightening technology while straightening an aluminum alloy finished product so as to guarantee the flatness of the aluminum alloy base material and stabilize its yield tensile ratio, thus guaranteeing that the aluminum alloy base material is difficult to crack during punching.

The invention discloses a method for promoting growth of GOSS textures of silicon steel strips by using pulse current. The method comprises the following steps of: conveying the silicon steel strips at the speed of 2 to 10 meters per minute under the drive of a conveying device; and guiding the pulse current of a pulse power supply to a moving silicon steel strip electrifying zone through a pair of electric contact devices, and performing electric stimulation treatment on the silicon steel strip electrifying zone in air atmosphere to promote the generation of a large amount of GOSS textures in the primary re-crystallization process, wherein the silicon steel strips are in a high magnetic induction cold-rolled state, the thickness of the silicon steel strips is 0.1 to 0.5 millimeter, the width of the silicon steel strips is 10 to 150 millimeters and the silicon content of the silicon steel strips is 0.5 to 6.5 percent. Compared with the traditional thermal treatment furnace annealing treatment process, the method has the advantages of low energy consumption, high production efficiency and low production cost, and the GOSS textures in the primary re-crystallization process have manycomponents. By electron back-scattered diffraction (EBSD) detection, the GOSS texture content of the silicon steel strips treated by adopting electric stimulation of the pulse current reaches 15 to 25 percent.

The invention discloses a copper strip cover-type furnace annealing technology and belongs to the field of heat treatment of metal materials. The technology comprises the following steps: 1, sealing and locking a cover-type furnace; 2, filling the cover-type furnace with safe gas; 3, carrying out a heating stage of the cover-type furnace, wherein the heating time is 4-5 h so that the temperature in an inner cover reaches 420-450 DEG C, and protective gas is introduced continuously in the heating process; 4 carrying out a heat preservation stage of the cover-type furnace; 5, carrying out a cooling stage of the cover-type furnace, wherein air cooling is carried out before water cooling, and protective gas is introduced continuously in the air cooling and water cooling stages; 6, filling the cover-type furnace with safe gas; and 7, unlocking the cover-type furnace and taking out a product. Through the adoption of the technical scheme of the invention, an annealed copper strip with better surface quality and more stable properties can be obtained, and the consumption of the protective gas resource in the annealing process can be reduced so as to reduce the production cost and improve the productivity effect.

The invention discloses a 42CrMo steel cold-rolled plate and its production method, and the 42CrMo steel cold-rolled plate comprises the following chemical components by mass: 0.38-0.45% of C, 0.17-0.37% of Si, 0.50-0.90% of Mn, less than 0.035% of P, less than 0.035% of S, 1.02-1.14% of Cr, 0.15-0.25% of Mo, and balance of Fe. The production method comprises molten steel smelting, continuous casting, hot rolling, cold rolling, bell-type furnace annealing, finishing and other processes, and is characterized in that, the hot rolled steel billet heating temperature is 1170-1270 DEG C, the finish rolling temperature is 850-950 DEG C, the coiling temperature is 700-750 DEG C, the cold rolling ratio down press rate is 25%-55%, the annealing temperature is Ac1-(10-30) DEG C, the heat insulation time is 8-14h, air cooling is performed when the billet is heat insulated to 400 DEG with a bell, and the flat elongation is 0.5%-1.2%. The 42CrMo steel cold-rolled plate is good in plasticity, toughness and cutting performances, and helps a user to perform cutting, stamping process and subsequent heat treatment.

A method of producing a seminconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form an n-type disorder reduction region. As such, the n-type field stop layer and the n-type disorder reduction region are formed by the proton implantation. Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device.

The invention relates to a cold-rolled tin plate for an easy-to-open lid and a production method of the cold-rolled tin plate, and mainly aims at solving the technical problems that an existing cold-rolled tin plate for the easy-to-open lid cracks in the stamping and forming processes of manufacturing the easy-to-open lid, and is low in yield strength. The production method sequentially comprises the following steps: smelting according to the ingredients; carrying out molten iron desulfuration and converter top-bottom composite blowing, blowing argon from the ladle bottom or refining by an LF furnace; blowing Ar to protect pouring in the whole course; heating by virtue of a slab heating furnace; descaling, roughly rolling, carrying out finish rolling, and rolling to obtain hot-rolled steel coils; decoiling again; and carrying out acid pickling, cold rolling, vertical continuous annealing furnace annealing, electrotinning and rolling to obtain the finished product, wherein the precision rolling and finish rolling temperature is 820-850 DEG C, the hot rolling and coiling temperature is 630-660 DEG C, the cold rolling reduction ratio is 85%-90%, the temperature range of cold-rolled strip steel in a hard state in a soaking zone of a vertical continuous annealing furnace is 570-590 DEG C, and the soaking time of the strip steel in the vertical continuous annealing furnace is 30-45s. The cold-rolled tin plate is mainly used for fabricating the easy-to-open lid.

A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350.degree. C. to 750.degree. C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon <10.sup.20 cm.sup.-3, the as-grown p- or n-type dopant profile can withstand furnace anneals to temperatures of 850.degree. C. and rapid thermal anneal temperatures to 1000.degree. C.

The invention relates to steel for battery steel shells and a manufacturing method thereof. The invention mainly solves the defects of large plane anisotropy, poor secondary processing embrittlement resistance, high production cost and the like existing in the existing steel for battery shells. The steel for battery case with excellent planar isotropy of the present invention has the following chemical element components by weight percentage: C: ≤0.01-0.05%, Si: ≤0.03%, Mn: 0.10-0.50%, P: ≤0.02%, S: ≤0.015%, Al: 0.01-0.10%, N: 0.002-0.007%, Ti: 0.005-0.02%, and the rest are iron and inevitable inclusions. The manufacturing method includes the following steps: molten iron pretreatment, converter smelting, post-furnace refining, hot rolling, pickling, cold rolling, bell annealing, leveling, finishing into finished coils, and is characterized by: heating temperature: ≤1270°C , Finish rolling temperature: 860~930℃, coiling temperature: ≤640℃; cold rolling deformation is controlled at 75%~90%, bell furnace annealing temperature: 650~800℃; others are carried out according to conventional processes. The product is used for stamping after electroplating nickel or directly stamping into battery case.

The present invention relates to a thick-gauge ultra-deep drawing cold rolled steel plate and a manufacturing method thereof. In the prior art, when the cold rolling reduction rate is insufficient, the stamping performance of the ultra-deep drawing cold rolled steel plate with the thickness of 1.2-2.0 mm and produced by using the bell furnace annealing process does not meet the standard. A purpose of the present invention is to solve the technical problem in the prior art. The chemical components of the thick-gauge ultra-deep drawing cold rolled steel plate comprise, by weight, less than or equal to 0.003% of C, less than or equal to 0.03% of Si, 0.1-1.0% of Mn, less than or equal to 0.02% of P, less than or equal to 0.02% of S, less than or equal to 0.005% of N, less than or equal to 0.05% of Alt, and the balance of Fe and unavoidable impurities, wherein the content of Ti% satisfies the equation that (Ti%)-3.4*(N%)-1.5*(S%)-4*(C%) is (0.004-0.03). According to the present invention, the thick-gauge ultra-deep drawing cold rolled steel plate is mainly used for outer covers, shells and other members of mechanical and electrical products.

The invention discloses a 590 MPa semi-cold hardened steel strip and a cover furnace production process thereof, and belongs to the technical field of cold hardened steel production. The steel strip comprises the following chemical components in percentage by weight: C not more than 0.0050%, Si not more than 0.05%, Mn not more than 0.30%, P not more than 0.010%, S not more than 0.020%, 0.030-0.050% of Als, and the balance iron, Ca and inevitable microelements. The production process comprises the flow of blast furnace molten iron smelting, converter molten steel smelting, LF molten steel refining, RH molten steel refining, CSP sheet blank continuous casting and continuous rolling, acid washing and cold continuous rolling, cover furnace annealing, leveling and inspection, packing and warehousing. The smelting, rolling, annealing and finishing process with ultralow carbons, CSP sheet blank continuous casting and continuous rolling production lines and cover furnace annealing as a core isadopted to obtain the semi-hard steel strip with stable chemical components and mechanical performance, high strength and hardness and a certain of plasticity to meet the requirements of 590 MPa coldhardened steel strip DC03-C590 for vehicle sealing strip substrates.

The invention belongs to the field of electron devices and particularly relates to a metallic oxide semiconductor film which is obtained by adopting of laser annealing craft, and application of the metallic oxide semiconductor film in a thin film transistor (TFT) device and an organic light emitting diode (OLED) device. The method of preparing of the metallic oxide semiconductor film includes of (1) preparing the metallic oxide semiconductor film which is based on zinc oxide and formed by adding of other metallic elements; (2), under oxygen atmosphere, the metallic oxide semiconductor film which is obtained in the step (1) conducting laser annealing for 3-6min, and the needed metallic oxide semiconductor film forming. Performance of the metallic oxide semiconductor film, such as migration rate and stability of threshold voltage, is greatly improved, compared with a traditional manner which uses a high-temperature annealing furnace for annealing, efficiency is higher, and stability is better.

The invention relates to the technical field of ferrous metallurgy information technology, and particularly relates to a combinatorial optimization method of steel coil stacking of a hood-type annealing furnace. According to the characteristics of an annealing process of a hood-type annealing furnace, based on the analysis of the effect of steel coil overall dimensions (external diameter, width, thickness, etc.) and steel grades on annealing time and the restriction of various constraint conditions, and aiming at the optimization objects of minimizing stacking number and maximizing furnace stage production efficiency, the invention establishes a mathematical model for the optimization of hood-type furnace stacking, and provides a hybrid genetic algorithm (FGSA) combining algorithms of a first fit decreasing algorithm (FFD), a genetic algorithm (GA), and a simulated annealing algorithm (SA) for the solution of the model. The method can realize the informatization and the automation of hood-type furnace annealing production, reduce the labor intensity of scheduling personnel, increase the production efficiency of production factories, and has the effect of energy saving and consumption reduction.

The invention discloses a method for controlling the temperature of an annealing furnace area, which includes the steps of information collection, data processing, and temperature setting. The speed information of the steel strip is collected at the PLC controller, and the time is integrated according to the speed value to obtain The location information of the specific furnace area where the steel strip is located; the information matching system calculates the required annealing temperature value of the steel strip according to the steel type and thickness information, and when the steel strip arrives at the furnace area, the temperature of the furnace area is adjusted accordingly The adjustment and change of the steel strip can avoid the phenomenon of hysteresis or advance in the temperature control and the position of the steel strip, and ensure that the steel strip is annealed at the correct set temperature, thereby protecting the annealing quality of the steel strip and improving the qualified rate of the product. In addition, when the steel strip is broken, the distributed control system can quickly search and calculate the location information of the steel strip, quickly perform positioning, shorten the processing time of the broken strip, and improve work efficiency.