33 results about "Proton implantation" patented technology

Hydrogen atoms and crystal defects are introduced into an n− semiconductor substrate by proton implantation. The crystal defects are generated in the n− semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.

A method for producing a semiconductor device includes providing a semiconductor substrate having a first conductivity type; implanting protons through a rear surface of the semiconductor substrate of the first conductivity type; and forming a first semiconductor region of the first conductivity type in the semiconductor substrate by performing an annealing process in an annealing furnace in a hydrogen atmosphere having a volume concentration of hydrogen that is equal to or greater than 0.5% and less than 4.65%, the first semiconductor region having a higher impurity concentration than that of the semiconductor substrate after the implantation step. The method reduces crystal defects in the generation of donors during proton implantation and improves the rate of change into a donor.

A method for producing a semiconductor device includes an implantation step of performing proton implantation from a rear surface of a semiconductor substrate of a first conductivity type and a formation step of performing an annealing process for the semiconductor substrate in an annealing furnace to form a first semiconductor region of the first conductivity type which has a higher impurity concentration than the semiconductor substrate after the implantation step. In the formation step, the furnace is in a hydrogen atmosphere and the volume concentration of hydrogen is in the range of 6% to 30%. Therefore, it is possible to reduce crystal defects in the generation of donors by proton implantation. In addition, it is possible to improve the rate of change into a donor.

The invention discloses a vertical cavity surface emitting laser. The vertical cavity surface emitting laser comprises a first electrode, a substrate, a first reflector layer, a quantum dot layer, a first limiting layer, a transition layer, a doping layer, a second limiting layer, a second reflector layer, an embossment layer and a second electrode which are sequentially stacked from bottom to top. Proton implantation regions are distributed in the transition layer and the doped layer, the embossment layer comprises an etching region and a non-etching region, and the intersection point of thecenter line of the vertical cavity surface emitting laser and the embossment layer is located in the etching region or the non-etching region. Different modes of lasing of the VCSEL array unit are realized by introducing the offset of the non-coaxial embossment layer, the wavelength of the long-wavelength VCSEL can be adjusted, the manufacturing process is simple, and the problem that the center of a surface embossment needs to be strictly aligned with the center of a VCSEL tabletop in the design and preparation process of an existing surface embossment technology is solved. The invention further provides a manufacturing method of the vertical cavity surface emitting laser with the advantages.

A semiconductor device is disclosed in which proton implantation is performed a plurality of times to form a plurality of n-type buffer layers in an n-type drift layer at different depths from a rear surface of a substrate. The depth of the n-type buffer layer, which is provided at the deepest position from the rear surface of the substrate, from the rear surface of the substrate is more than 15 μm. The temperature of a heat treatment which is performed in order to change a proton into a donor and to recover a crystal defect after the proton implantation is equal to or higher than 400° C. In a carrier concentration distribution of the n-type buffer layer, a width from the peak position of carrier concentration to an anode is more than a width from the peak position to a cathode.

After the proton implantation (16), hydrogen-induced donors are formed by furnace annealing treatment, thereby forming an n-type electric field stop layer (3), and the disorder generated in the proton passing region (14) is further reduced by laser annealing treatment, thereby forming an n-type disordered Sequentially reduce the area (18). In this way, the present invention can provide an n-type electric field stop layer (3) based on proton injection (16) and an n-type disorder-reducing region (18), which has low on-resistance and can improve electrical characteristics such as leakage current, and is stable and inexpensive. Semiconductor device and manufacturing method thereof.

A silicon carbide semiconductor device includes a semiconductor substrate and a first semiconductor layer of the first conductivity type; a second semiconductor layer of a second conductivity type; a first semiconductor region of the first conductivity type; a gate electrode provided opposing at least a surface of the second semiconductor layer between the first semiconductor region and the first semiconductor layer, across a gate insulating film; and a first electrode provided on surfaces of the first semiconductor region and the second semiconductor layer. Protons are implanted in a first region of the semiconductor substrate, spanning at least 2 μm from a surface of the semiconductor substrate facing toward the first semiconductor layer; and in a second region of the first semiconductor layer, spanning at least 3 μm from a surface of the first semiconductor layer facing toward the semiconductor substrate. The protons having a concentration in a range from 1×1013 / cm3 to 1×1015 / cm3.

The invention discloses a vertical cavity surface emitting semiconductor laser structure, comprising: an optical oxidation confinement layer located at the antinode of the standing wave of the laser to play the role of optical confinement; an electrical oxidation confinement layer located at the node of the standing wave of the laser to play the role of optical confinement; The role of current confinement; the proton injection layer, located on the electrical oxidation confinement layer and the optical oxidation confinement layer, improves the information transmission rate of the laser; and the epitaxial growth buffer layer, N-face electrode, N-type DBR, N-type space layer, organic The source region, the P-type space layer, the P-type DBR layer and the P-surface electrode constitute the laser resonator cavity. The vertical cavity surface emitting laser adopts proton injection and separation limited oxidation structure, which improves the uniformity of current injection, reduces the parasitic capacitance of the device, has low threshold current, stable single transverse mode or multi-transverse mode output, The high-speed performance of the device is improved.

The invention discloses a method using proton irradiation to prepare a terminal structure. The method comprises the steps that a main junction and a P type field limiting ring of a chip are prepared on a substrate; an element package structure is prepared on the chip on which the main junction and the P type field limiting ring are formed; after metal electrode deposition is carried out on the chip on which the element package structure is formed, a cathode is formed through etching; after proton implantation is carried out on the chip on which the cathode is formed, an N type well is formed through annealing, and a front process of the chip is finished; and after P type ion implantation is carried out on the back of the chip whose front process is finished to form a P collector, metal electrode deposition is carried out to form an anode and a product is acquired. According to the method using proton irradiation to prepare the terminal structure, which is provided by the invention, voltage withstanding is ensured, and at the same time the chip terminal area is reduced; proton irradiation is used to form donor impurities, and the N type well is formed; the implantation damage is smaller compared with common high energy particle implantation; and the reliability of a device can be improved.

After the front component structure is formed, from n ‑ P-type impurities are ion-implanted into the back surface (11b) of the silicon carbide substrate (11). Next, from n ‑ The back surface (11b) of the silicon carbide substrate (11) is irradiated with laser light to activate the p-type impurities to form a p-type collector layer (4). Next, in n ‑ A barrier metal layer is formed on the back surface (11b) of the silicon carbide substrate (11), and the barrier metal layer is sintered. Next, from n ‑ Proton implantation (16) with a range (17) at a position deeper than the p-type collector layer (4) is performed on the back surface (11b) side of the type silicon carbide substrate (11). Next, n is subjected to furnace annealing ‑ The entire silicon carbide substrate (11) is heated to convert protons into donors to form n-type silicon carbide substrates (11). + type field cutoff layer (3). At this time, n is reduced by reducing the disorder remaining in the proton passage region (14). ‑ Crystal state recovery of type silicon carbide substrate (11). This makes it possible to stably avoid electrical characteristic defects.

The present invention relates to methods for forming semiconductor devices and semiconductor devices. A method for forming a semiconductor device includes implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of a defined dose of protons and a defined temperature profile is selected depending on a carbon-related parameter indicative of information about a carbon concentration within at least a portion of the semiconductor substrate.

A method for efficiently eliminating the wrinkles of graphene by chemical vapor deposition, using controllable proton injection in a high-temperature environment, through precise control of the temperature environment and the hydrogen plasma power and time for generating protons, on various metals such as copper and nickel and Its alloys, on various non-metal substrates such as silicon oxide and silicon carbide, directly grow wrinkle-free ultra-flat graphene films, or eliminate wrinkles on wrinkled graphene; the plasma-assisted chemical vapor deposition system includes Plasma generator, vacuum system, and heating system; among them, the power of the plasma generator is 5-1000W, and the vacuum system is 10 ‑5 ~10 5 Pa, the controllable heating temperature range of the system is 25-1000°C; protons are injected into various substrates at the same time, and ultra-smooth non-wrinkled graphene is directly grown, including proton injection of wrinkled graphene grown by traditional methods Post-processing to reduce and eliminate wrinkles.