Vertical cavity surface emitting semiconductor laser structure

Abstract

The invention discloses a vertical cavity surface emitting semiconductor laser structure, comprising: an optical oxidation confinement layer located at the antinode of the standing wave of the laser to play the role of optical confinement; an electrical oxidation confinement layer located at the node of the standing wave of the laser to play the role of optical confinement; The role of current confinement; the proton injection layer, located on the electrical oxidation confinement layer and the optical oxidation confinement layer, improves the information transmission rate of the laser; and the epitaxial growth buffer layer, N-face electrode, N-type DBR, N-type space layer, organic The source region, the P-type space layer, the P-type DBR layer and the P-surface electrode constitute the laser resonator cavity. The vertical cavity surface emitting laser adopts proton injection and separation limited oxidation structure, which improves the uniformity of current injection, reduces the parasitic capacitance of the device, has low threshold current, stable single transverse mode or multi-transverse mode output, The high-speed performance of the device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a structure of a vertical cavity surface emitting semiconductor laser. Background technique [0002] High-speed vertical-cavity surface-emitting lasers (VCSELs) are one of the most promising light sources for next-generation optical communications and optical Internet. With the development of informatization, optical communication puts forward higher requirements for speed and bandwidth. In 2002, IEEE proposed the 802.3ae Ethernet standard with a speed of 10Gb / s. Especially in high-speed local area networks, the vertical cavity surface emitting laser with many advantages has great market prospects and great social significance. In the optical communication network, after the long-distance transmission of the backbone network, the signal mainly reaches the user terminal through a short-distance or very short-distance local area network. This short distance can make the connec...

AI Technical Summary

Problems solved by technology

The parasitic capacitance of the device is the series connection of the oxide capacitance and the capacitance from the active area below the oxide hole. The thickness of the single oxide layer is thin and the capacitance is large, which affects the high-speed performance of the device.

On the other hand, the single oxide layer affects the uniformity of current injection, causing space hole burning and thermal lens effect, thereby reducing the performance of VCSEL

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