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Method for forming semiconductor device and semiconductor device

A semiconductor and device technology, applied in the field of semiconductor manufacturing

Active Publication Date: 2019-04-30
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Realization of semiconductor substrates with differently doped regions is often a challenging task

Method used

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  • Method for forming semiconductor device and semiconductor device
  • Method for forming semiconductor device and semiconductor device
  • Method for forming semiconductor device and semiconductor device

Examples

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Embodiment Construction

[0016] Various example embodiments will now be described more fully with reference to the accompanying drawings, in which some example embodiments are shown. In the drawings, the thickness of lines, layers and / or regions may be exaggerated for clarity.

[0017] Accordingly, while the example embodiments are capable of various modifications and alternative forms, embodiments thereof are shown as examples in the drawings and will be described in detail herein. It should be understood, however, that there is no intention to limit example embodiments to the particular forms disclosed, but on the contrary, example embodiments are to cover all modifications, equivalents, and alternatives falling within the scope of the disclosure. Throughout the description of the figures, like numerals refer to like or analogous elements.

[0018] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled ...

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Abstract

The present invention relates to methods for forming semiconductor devices and semiconductor devices. A method for forming a semiconductor device includes implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of a defined dose of protons and a defined temperature profile is selected depending on a carbon-related parameter indicative of information about a carbon concentration within at least a portion of the semiconductor substrate.

Description

technical field [0001] Embodiments relate to semiconductor fabrication techniques, and in particular, to a method for forming a semiconductor device and a semiconductor device. Background technique [0002] Many semiconductor devices include a semiconductor substrate having regions of different conductivity types and different doping concentrations. Realization of semiconductor substrates with differently doped regions is often a challenging task. One way to generate donors in semiconductors is to implant protons to generate hydrogen-induced donors. It is desirable to increase the doping efficiency of donors by proton implantation. Contents of the invention [0003] Some embodiments relate to methods for forming semiconductor devices. The method includes implanting a defined dose of protons into the semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of a defined dose of protons and a defined temper...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265H01L21/331H01L29/739
CPCH01L21/265H01L29/66325H01L29/7393H01L21/263H01L22/12H01L22/14H01L22/20H01L29/66333H01L29/66348H01L29/7397H01L29/7395H01L29/36H01L21/324H01L29/1095
Inventor M.耶利内克J.G.拉文H.厄夫纳H-J.舒尔策W.舒斯特雷德
Owner INFINEON TECH AG
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