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Semiconductor device with a cz semiconductor body and method for producing a semiconductor device with a cz semiconductor body

A semiconductor, body technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc.

Pending Publication Date: 2019-03-01
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Front-of-line-of-line (FEOL) processing may lead to formation of undesired complexes including additional impurities

Method used

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  • Semiconductor device with a cz semiconductor body and method for producing a semiconductor device with a cz semiconductor body
  • Semiconductor device with a cz semiconductor body and method for producing a semiconductor device with a cz semiconductor body
  • Semiconductor device with a cz semiconductor body and method for producing a semiconductor device with a cz semiconductor body

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Embodiment Construction

[0013] In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which are shown by way of illustrations specific embodiments in which the disclosure may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. For example, features illustrated or described for one embodiment can be used on or in conjunction with other embodiments to yield still further embodiments. It is intended that the present disclosure cover such modifications and variations. The examples are described using specific language that should not be construed as limiting the scope of the appending claims. Drawings are not to scale and are for illustrative purposes only. For the sake of clarity, the same elements have been designated by corresponding references in the different drawings if not stated otherwise.

[0014] The t...

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Abstract

A method of manufacturing a semiconductor device includes reducing an oxygen concentration in a first part of a CZ semiconductor body by a thermal treatment. The first part adjoins a first surface ofthe semiconductor body. The semiconductor body is processed on the first surface. A thickness of the semiconductor body is reduced by thinning the semiconductor body at a second surface relative to the first surface. Thereafter, in the semiconductor body, a field stop zone is formed by proton implantations through the second surface and annealing of the semiconductor body. The field stop zone extends into the first part of the CZ semiconductor body.

Description

Background technique [0001] In semiconductor devices such as Insulated Gate Bipolar Transistors (IGBTs), Insulated Gate Field Effect Transistors (IGFETs) or diodes, low doping concentration substrate materials such as MCZ (Magnetically Pulled) silicon wafers are used for To achieve the desired DC voltage blocking requirements of semiconductor devices. In addition to the dopants which determine the initial doping concentration in the substrate material, there may also be additional impurities eg caused by growth processes of the substrate material, such as magnetic pull growth of silicon ingots. Front-end-of-line (FEOL) processing can lead to the formation of undesired complexes including additional impurities. An example of an undesired compound is an electroactive compound such as a carbon-oxygen-hydrogen compound that may act as a donor and may counteract, for example, a precisely set doping concentration of a functional semiconductor region such as a field stop region. C...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/322H01L21/331H01L29/739H01L29/32
CPCH01L21/322H01L29/32H01L29/66325H01L29/739H01L29/66712H01L29/7395H01L29/7802H01L29/861H01L29/36H01L29/66333H01L21/26506
Inventor H.厄夫纳H-J.舒尔策A.苏西蒂T.韦本
Owner INFINEON TECH AG
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