30 results about "Cd element" patented technology

The invention relates to a transparent oxyfluoride tellurite glass, which comprises the following components by mole ratio: 55-75mol% of TeO2, 5-25mol% of Al2O3, 0-18mol% of CaF2, 0-15mol% of LaF3. The oxyfluoride tellurite glass uses a traditional glass melting process for melting and molding. The oxyfluoride tellurite glass possesses excellent thermal stability, and is an ideal rare earth doped up-conversion luminescence matrix material which is capable of enhancing the permeability of the matrix, improving the treatment load of a land infiltration system and improving the denitrification efficiency, the oxyfluoride tellurite glass does not contain toxic heavy metals Pb and Cd elements which are harmful to human body and environment.

The invention provides a heatproof and anticorrosion rare earth magnesium alloy with high obdurability and a preparation method thereof, belonging to the technical field of light metal material. The rare earth magnesium alloy comprises the following components in proportion by weight: 3-5% of aluminum (Al), 0.1-0.4% of manganese (Mn), 0.8-2.5% of yttrium (Y), 0.3-1.0% of stibium (Sb), 0.3-1% of cadmium (Cd) and balance of magnesium (Mg). The invention has the advantages of solving the problem of reduction of mechanical properties caused by the splitting effect of a bulky Al2Y relative matrix in the alloy structure, improving the obdurability of the alloy and the mechanical properties of the alloy under room temperature and high temperature by making the most of the solution strengthening effect and refined crystalline strengthening effect of the Sb, Y and other elements and the dispersion strengthening effect of the high melting point YSb particle phase mass points, further improving the mechanical properties of the alloy by the grain refinement effect and the solution strengthening effect of the Cd element, and improving the anticorrosion performance of the alloy by improving theelectrode potential of the alloy matrix by the Cd element, so that the obdurability, heatproof performance and anticorrosion performance of the alloy are higher than that of the existing AE series magnesium alloy. The technological requirements for the preparation method provided by the invention are not harsh, and the preparation method can meet the industrialized enlarged production requirements and ensure thorough embodiment of the two technical effects.

The invention discloses a bearing and a preparation technology thereof, and belongs to the technical field of metal materials. The bearing comprises 0.05%-0.07% of Cd, 0.5%-1.5% of Mn, 0.4%-0.8% of C,0.08%-0.12% of Tl, 0.01%-0.05% of Cu, 0.03%-0.07% of Co and the balance Fe and impurities. The Cd element in raw materials can react with Cu in the materials to form hard copper alloy phases dispersed in steel, so that the tensile strength and abrasion resistance of alloy steel are improved obviously. Tl is very important for the alloy steel, not only the alloy strength can be improved, but alsothe alloy hardness and the corrosion resistance of the alloy can be improved, and the Tl is essential for the effect of prolonging the service life of a product. Meanwhile, with the method that the bearing body is combined with polymer layers outside the bearing body, the product has extremely high resistance in complex and variable environment.

The invention relates to a quantum dot and a preparation method and application thereof; the quantum dot comprises an inner core and a shell layer covering the inner core, the material of the inner core is CdZnSe, and the material of the shell layer is CdZnS, wherein the Cd element in the shell layer and the The molar ratio of the S element is 0.15:1 to 0.4:1. The preparation method includes: preparing an inner core, mixing the inner core with a first zinc precursor, aliphatic amine, and a solvent to form a first precursor solution, and then adding the first cadmium precursor and the first sulfur precursor to the first precursor separately or together at a uniform speed. The precursor solution is used to form a second precursor solution, and the molar ratio of Cd element and S element in the second precursor solution is 0.15:1 to 0.4:1; the second precursor solution is reacted at the first temperature to The surface of the inner core is coated to form a shell, resulting in quantum dots. The energy level structure of the quantum dots better matches the hole and electron transport layers, and the carrier injection barrier is lower. 2 At the same working current, the EQE reaches the maximum value, and the optoelectronic device has a longer life and is more suitable for commercialization.

The invention belongs to the technical field of metal material preparation, and discloses a high-strength and corrosion-resistant aluminum alloy and its preparation method and application, including Mg 0.6-1.0%, Si 0.8-1.2%, Cu 0.1-0.3%, and Mn by weight percentage 0.4‑1.0%, Cr 0.15‑0.35%, Cd 0.05‑0.1%, and Fe≤0.5%. The present invention adds Cd, adopts three-stage homogenization heat treatment, and the Cd element is preferentially homogenized and diffused, and then the Mn and Cr elements take the Cd atomic cluster as the nucleation site, and precipitate to form a highly dispersed AlMnCr phase containing Cd elements, which can be used as a deformation regenerated phase. The nucleation particles of the crystallization realize the grain refinement of the second phase particle-induced recrystallization; the present invention optimizes the design of the aluminum alloy alloy composition based on the principle of alloying, that is, the mass ratio of Mg to Si is (0.65‑0.9):1 The mass ratio of Cu and Si is (0.15‑0.25): 1, and the Mg of highly dispersed distribution is obtained 2 Si strengthening phase and higher strength without forming a Cu-containing phase with poor corrosion resistance; through the present invention, an aluminum alloy with medium and high strength, high plasticity and high corrosion resistance can be obtained, which is suitable as an aluminum alloy for automotive structural parts or applied in its profile.

The invention discloses a method for increasing the phase inversion temperature of a Cu2Se base thermoelectric material. A Cd element is mixed into a Cu position of Cu2Se, and the method specifically comprises the following steps that 1, raw materials are weighed on the basis of a stoichiometric ratio of CdxCu2-xSe(0.004<=x<=0.012), and tableted after being mixed to be uniform; 2, column bodies obtained after tableting are subjected to vacuum sealing, then, self-propagating reaction is caused, and after the reaction is completed, natural cooling is performed; 3, reaction products obtained in the step 2 are ground to be fine powder, then, plasma activated sintering is performed, and a dense CdxCu2-xSe block is obtained. The method is simple, high in repeatability, capable of effectively increasing the phase inversion temperature of the Cu2Se base thermoelectric material, and suitable for being applied and popularized.