81results about How to "Stable temperature characteristics" patented technology

An emitter follower circuit applies to an input terminal of a second amplifying device a voltage according to a reference voltage applied to a reference terminal. First and second resistors are connected in series between the reference terminal and an input terminal of a first amplifying device. The collector of a first transistor is connected to the reference terminal and a control voltage is applied to the base of the first transistor. A third resistor is connected between the emitter of the first transistor and a grounding point. A current mirror circuit draws a current proportional to a current input from the collector of the first transistor from a connection point of the first and second resistors.

The present disclosure is directed to a thin film resistor having a first resistor layer having a first temperature coefficient of resistance and a second resistor layer on the first resistor layer, the second resistor layer having a second temperature coefficient of resistance different from the first temperature coefficient of resistance. The first temperature coefficient of resistance may be positive while the second temperature coefficient of resistance is negative. The first resistor layer may have a thickness in the range of 50 and 150 angstroms and the second resistor layer may have a thickness in the range of 20 and 50 angstroms.

The invention discloses a manufacturing process for an optical fiber coupler, which includes: firstly, respectively grinding two optical fibers; secondly, combining two grinded surfaces; fusing the grinded surfaces by a high-temperature heating source; and finally, precisely controlling the splitting ratio of the coupler by the process of continuous fusing or biconical taper. The manufacturing process can be used for manufacturing a high-performance polarization maintaining optical fiber coupler, a single-mode optical fiber coupler, a multi-mode optical fiber coupler and a multi-mode coupler with a splitting ratio unrelated to an input wavelength and an activation pattern, the polarization maintaining optical fiber coupler and the single-mode optical fiber coupler manufactured by the manufacturing process have the advantages of short coupled area, high reliability, fine temperature property, polarization independence, wavelength independence and the like, and the multi-mode optical fiber coupler manufactured by the manufacturing process has quite high reliability besides quite low added loss.

A crystal oscillator of the present invention includes: a substrate provided in a package; a heating device arranged as surrounding an internal area of the substrate on at least one of the surfaces of the substrate; a crystal resonator or a crystal element and an oscillation circuit unit provided in an area enclosed by the heating device; a thermosensitive element which detects a temperature in an area enclosed by the heating device; and a control unit for controlling a heating value applied to the heating device based on a detection result of the thermosensitive element.

The invention provides a polymorphic organic resistive random access memory and a preparation method, and belongs to the technical field of a super-large-scale integrated circuit. The organic resistive random access memory comprises a substrate, a bottom electrode on the substrate, a middle organic function layer and a top electrode; and the middle organic function layer is a titanyl phthalocyanine film which contains a metal Cu or Ag nano filament. Two resistance switching mechanisms are introduced: the first one is that the metal Cu or Ag nano filament is fused to form a closed state by adding enough positive pressure to the top electrode, and after negative pressure is added, the metal Cu or Ag nano filament is formed again to be converted into an open state; and the second one is that the resistance switching is realized by the positive operation and the reverse operation of an oxidation reduction reaction of the top electrode and the organic film. The polymorphic organic resistive random access memory realizes the polymorphic resistance switching characteristic and the multi-value memory function, and has very high application value in the aspect of the organic memory with low cost and high performance.

An emitter follower circuit applies to an input terminal of a second amplifying device a voltage according to a reference voltage applied to a reference terminals. First and second resistors are connected in series between the reference terminal and an input terminal of a first amplifying device. The collector of a first transistor is connected to the reference terminal, and a control voltage is applied to the base of the first transistor. A third resistor is connected between the emitter of the first transistor and a grounding point. A current mirror circuit draws a current proportional to a current input from the collector of the first transistor from a connection point of the first and second resistors.

The invention belongs to the technical field of electronic circuits and particularly relates to a band-gap reference circuit with high-order temperature compensation. The band-gap reference circuit with the high-order temperature compensation comprises the band-gap reference circuit and a voltage regulation circuit. According to the band-gap reference circuit with the high-order temperature compensation, with addition of nonlinear temperature compensation and a feedback regulation circuit, a temperature coefficient is better improved; reference output voltage can be more stable through negative feedback action of the voltage regulation circuit, and thus band-gap reference voltage with high-order temperature compensation is obtained; and compared with the traditional band-gap reference voltage, the band-gap reference voltage with the high-order temperature compensation has lower temperature coefficient and is more accurate and stable in the reference output voltage. The band-gap reference circuit with the high-order temperature compensation can be applied to various analog integrated circuits including oscillators, data converters and the like.

The invention provides a ceramic electric heating assembly which comprises a ceramic matrix, heating film resistors, at least two groups of electrodes, screw holes and a protective layer. The heating film resistors are arranged on the ceramic matrix; the electrodes are arranged on the ceramic matrix and are electrically connected with the heating film resistors; the screw holes are formed in the ceramic matrix and are electrically connected with the electrodes; the protective layer covers the outer surfaces of the heating film resistors. The ceramic electric heating assembly has the advantages that the structures of the screw holes are formed in the electric heating assembly, accordingly, braze welding can be omitted during lead wire connection, and the ceramic electric heating assembly is simple in manufacture and low in cost.

It is an object to reduce the region of a photoelectric conversion element which light does not reach, to suppress deterioration of power generation efficiency, and to suppress manufacturing cost of a voltage conversion element. The present invention relates to a transmissive photoelectric conversion device which includes a photoelectric conversion element including an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer; a voltage conversion element which is overlapped with the photoelectric conversion element and which includes an oxide semiconductor film for a channel formation region; and a conductive element which electrically connects the photoelectric conversion element and the voltage conversion element. The photoelectric conversion element is a solar cell. The voltage conversion element includes a transistor having a channel formation region including an oxide semiconductor film. The voltage conversion element is a DC-DC converter.

Disclosed is a composite contact which comprises a first layer which contains a Cu-Cr mixture and a second layer which contains Cu, wherein, Cr power or particles with mean diameter of 0.1-150 mum and Cu power or particles with mean diameter of 0.1-150 mum are mixed according to the scaling ratio of 15-60145402070f Cr by weight to allowance of Cu to form the first layer.The first layer and the second layer are bonded with each other, at the same time, Cu in the first layer enters a range of 20-100 mum of the second layer from the interface of the first layer and the second layer, and Cu in the second layer enters a range of 20-100 mum of the first layer from the interface.

A piezoelectric vibration module includes a piezoelectric element, a wiring member connected to the piezoelectric element and drawn out to the outside, and an elastic plate bonded to one surface of the piezoelectric element, wherein the elastic plate is made of a silicone rubber.

A dispersion-compensated optical fiber which does not cause an increase in a loss if it is wound in a small reel and has a stable temperature characteristics is provided. A dispersion-compensated optical fiber is formed such that, in at least a wavelength between 1.53 to 1.63 μm, a bending loss of 20 mm bending diameter is 5 dB / m or lower, a wavelength dispersion is −120 ps / nm / km or lower, a cut-off wavelength under a usage condition is 1.53 μm or lower, an outer diameter of the cladding is 80 to 100 μm, an outer diameter of a coating is 160 to 200 μm, a viscosity of a surface of a coating resin is 10 gf / mm or lower. It is set such that b / a is 1.5 to 3.5, c / b is 1.2 to 2.0, a radius of a core is 4 to 8 μm, Δ1 is +1.6% to +2.6%, Δ2 is −0.30% to −1.4%, and Δ3 is −0.3 0% to +1.0%. Young's modulus of a first coating layer is 0.15 kgf / nun 2 or lower and its thickness is 20 to 30 μm. Young's modulus of a second coating layer is 50 kgf / mm2 or lower and its thickness is 15 to 30 μm.

A laminated ceramic capacitor includes a capacitor body of alternately stacked dielectric layers and internal electrode layers, and an external electrode provided on the end face of the capacitor body on which the internal electrode layer is exposed. The dielectric layer has a crystal phase composed mainly of barium titanate and having a cubic system crystal structure. The grain diameter of crystal grains constituting the crystal phase is 0.05 to 0.2 pm. The dielectric layer is formed of a ceramic containing, per mole of barium, 0.0014 to 0.03 moles yttrium, 0.0002 to 0.045 moles manganese, 0.0075 to 0.04 moles magnesium and 0.025 to 0.18 moles ytterbium. The dielectric bonding material is formed of a ceramic containing the same components as those of the main crystal phase of the dielectric ceramic constituting the dielectric layer.

Provided is a glass ceramic composition which can be fired at a temperature of 1000° C. or lower, and a sintered body of which has a low relative permittivity and a high Q value, stable temperature characteristic and high reliability, and is excellent in plating solution resistance. The glass ceramic composition provides a low dielectric constant layer for inclusion in a laminate glass ceramic substrate in a ceramic multilayer module. It includes a first ceramic having forsterite as the main constituent, a second ceramic having at least one of SrTiO3 and TiO2 as the main constituent, a third ceramic having BaZrO3 as the main constituent, a fourth ceramic having at least one of ZrO2 and MnO as the main constituent, and 3 weight % or more of a borosilicate glass containing Li2O, MgO, B2O3, SiO2 and ZnO, which further contains an additive constituent including at least one of CaO and SrO.

In a dielectric ceramic composed of a composite oxide containing main grains (1) mainly composed of Ti and at least one alkaline earth metal element selected from Ca, Sr, and Ba, the main grains ( 1) Metal components containing Mg, Mn, and rare earth elements, and at least one metal component of Mg, Mn, and rare earth elements exists in the main crystal at a higher concentration than inside the main crystal grain (1) On the surface side of the particles, by containing 0.04 to 0.2 parts by mass of Zr in exchange for oxides with respect to 100 parts by mass of the composite oxide, a high dielectric constant can be realized even in micronized barium titanate-based crystal grains. , and can stabilize the temperature characteristics of the relative permittivity.

The invention discloses a method for preparing a binary alternatively-doped BST membrane, belongs to the technical field of functional materials, and relates to a method for preparing a nanocrystalline BST membrane. The method adopts binary doping of Mn and Y, namely, carries out Mn or Y doping on an odd layer membrane and carries out Y or Mn doping on an even layer membrane; and the method adds a pre-crystallization processing step between cooling and crystallization steps. The membrane prepared by the method is smooth and compact with no crack or shrinkage cavity, and can greatly enhance the comprehensive dielectric tuning performance of the nanocrystalline BST membrane; and the obtained nanocrystalline BST membrane has a dielectric tuning rate of over 30.0 percent, a dielectric loss of less than 2.0 percent, a K factor of greater than 15.5, a high dielectric strength and a stable frequency characteristic and a temperature characteristic. The nanocrystalline BST membrane prepared by the method can be used for preparing a microwave tuning device (such as a phase shifter) instead of a ferrite and a semiconductor so as to remarkably reduce the manufacturing cost of the microwave tuning device; and furthermore, the nanocrystalline BST membrane prepared by the method is applicable for magnetic recording, pyroelectric focal plane arrays and the like.

The invention discloses a high-precision extinction ratio test method and system. The method includes the steps that when light signals are attenuated to be within a best work signal-to-noise ratio range of a light signal modulation amplitude test unit, and a part of the attenuated light signals are tested through the light signal modulation amplitude test unit to obtain a light signal modulation amplitude value; the extinction ratio is calculated according to the light signal modulation amplitude value. A method based on high-speed radio frequency signal peak-to-peak value detection is adopted, the extinction ratio of the detected light signals is converted into low-frequency voltage signals, and the aim of measuring the high-speed light signal extinction ratio at high precision is achieved on various signal code pattern and modulation format conditions in a wide signal speed range; meanwhile, the system greatly extends the dynamic range of the light signals capable of being tested, and testing precision, consistence of repeated tests and work stability of a test device are improved.

The invention relates to a microwave dielectric ceramic, comprising a main crystal phase. A chemical formula of the main crystal phase is Mg<2-2x>CaTiO<4-x>, wherein x is equal to or larger than 0.05 but smaller than or equal to 0.2. The microwave dielectric ceramic has relatively good microwave dielectric properties. Besides, the invention provides a preparation method of the microwave dielectric ceramic.

An object of the present invention is to provide a crystal oscillator piece in which the generation of leakage vibration is suppressed, and a method for manufacturing such a crystal oscillator piece. More specifically, a method for manufacturing a crystal oscillator piece according to the present invention includes the steps of forming a first etching mask on an upper surface of a crystal wafer and a second etching mask on a lower surface of the crystal wafer, and forming a vibrating tine by immersing the crystal wafer in an etching solution thereby dissolving crystal portions not covered with the first and second etching masks, wherein the second etching mask is designed to have a first protruding portion protruding from a position corresponding to a first edge of the first etching mask, the first protruding portion being chosen to have such a length that a first residue is formed in a predetermined shape on a first side face, irrespective of a positional displacement between the first and second etching masks, and wherein the first and second etching masks are designed so that a second residue formed on a second side face is adjusted so as to ensure that one of two principal axes passing through a centroid and dynamically perpendicular to each other in a cross section taken perpendicularly to a longitudinal direction of the vibrating tine is oriented substantially parallel to the upper or lower surface of the crystal wafer.

A magnetic sensor comprises magnetoresistor thin films used in view of improvement of identification accuracy of operation of the magnetic sensor so as to prevent degradation of the degree of freedom of arrangement attributed to the narrow intervals between the magnetoresistor thin films. The number of magnetoresistive elements for canceling the harmonics can be increased to an extent that the production of the magnetic sensor does not became difficult while flexibly adjusting the intervals between magnetoresistive elements. The thermal characteristics are uniformed and the identification accuracy is improved. The magnetic sensor has magnetoresistance pattern where magnetoresistor thin films are formed on a substrate, and the magnetoresistance pattern is composed of A-phase and B-phase magnetoresistance patterns which output two signals having phases which are different by 90 DEG. The magnetic sensor is characterized in that the magnetoresistance pattern is formed by combining two substrates.

Crystal grains mainly composed of barium titanate have a mean grain size of not more than 0.2 μm. The volume per unit cell V that is represented by a product of lattice constant (a, b, c) figured out from the X-ray diffraction pattern of the crystal grains is not more than 0.0643 nm3. Thereby, a dielectric ceramics having high relative dielectric constant can be obtained. A multilayer ceramic capacitor comprises a capacitor body and an external electrode that is formed at both ends of the capacitor body. The capacitor body comprises dielectric layers composed of the dielectric ceramics, and internal electrode layers. The dielectric layers and the internal electrode layers are alternately laminated.

The invention relates to an integrated high temperature gas cooling pebble bed nuclear reactor power generation system comprising a nuclear reactor core and a nuclear reactor middle shell sleeving the nuclear reactor core. The nuclear reactor middle shell is communicated with a first heat exchange circulating loop, a nuclear reactor outer shell sleeves the first heat exchange circulating loop, a steam outlet of the top of the nuclear reactor outer shell is connected to a steam power generator, a steam valve is arranged in the steam inlet of the steam power generator, the bottom of the steam power generator is connected to a condenser through a pipeline, the bottom of the condenser is connected to a pump through the pipeline, and the pump is connected to the liquid inlet of the bottom of the nuclear reactor outer shell through a pipeline to form a second heat exchange circulating loop. The problems that an existing pressurized water type and high temperature gas cooling pebble nuclear fuel nuclear reactors are low in efficiency and safety and are not environment-friendly, and nuclear accident and nuclear leakage risks exist can be overcome, and the system is safer, more environment-friendly and more efficient.

A dispersion-compensated optical fiber which does not cause an increase in a loss if it is wound in a small reel and has a stable temperature characteristics is provided, wherein, in a wavelength range from. A dispersion-compensated optical fiber is formed such that, in at least a wavelength between 1.53 to 1.63 μm, a bending loss of with a 20 mm bending diameter is 5 dB / m or lower, a wavelength dispersion is −120 ps / nm / km or lower, a cut-off wavelength under a usage condition is 1.53 μm or lower, an outer diameter of the cladding is 80 to 100 μm, an outer diameter of a coating is 160 to 200 μm, and a viscosity of a surface of a coating resin is 10 gf / mm or lower. It is set such that b / a is 1.5 to 3.5, c / b is 1.2 to 2.0, a radius of a core is 4 to 8 μm, Δ1 is +1.6% to +2.6%, Δ2 is −0.30% to −1.4%, and Δ3 is −0.30% to +1.0%. Young's modulus of a first coating layer is 0.15 kgf / mm2 or lower and its thickness is 20 to 30 μm. Young's modulus of a second coating layer is 50 kgf / mm2 or lower and its thickness is 15 to 30 μm.

The invention relates to a wireless power supply system with an intelligent power patch board, and belongs to the technical field of intelligent power patch boards for electrical connection and wireless power supply. The wireless power supply system consists of the intelligent power patch board, a wireless power supply system transmitting terminal, sockets, a liquid crystal display device, USB charging interfaces, LED function indicator lights, a main switch, a reception LC resonance circuit, a rectification filter circuit and a voltage stability control circuit of the wireless power supply system, a sensor and an intelligent control system which are arranged in an insulating shell, a transmitting antenna, a transmission LC resonance circuit, a driving power amplification circuit, a high-frequency signal generator, a rectification voltage transformation circuit and a power supply. The intelligent control system automatically detects load power and controls closing and opening of the transmitting terminal. The wireless power supply transmission distance is 1.5m, the transmission efficiency is 90% above and transmission and reception coils are manufactured by rare earth lanthanum tellurium copper alloy or rare earth aluminum alloy materials to efficiently deliver magnetic coupling resonance electromagnetic energy without cables.

The invention provides an organic resistive random access memory and a preparation method thereof, which belong to the technical field of very large scale integrated circuit. The organic resistive random access memory comprises a substrate, a bottom electrode on the substrate, a middle organic functional layer and a top electrode, wherein the middle organic functional layer is a metal-doped TiOPc film. During the growth process of the TiOPc film, the even metal doping is introduced to realize the redox reaction of the metal impurity and the organic thin film and to further realize the resistive bistable state. Meanwhile, the even metal doping is artificially introduced to realize the even trap distribution, thereby effectively reducing the instability of the characteristics of a single device and the inhomogeneity of resistive characteristics among different devices, caused by the trap random distribution. The organic resistive random access memory has good chemical stability and temperature stability, and can be realized on the soft substrate, and has high application value in the field of the organic memory with low cost and high performance.

An object of the present invention is to provide a multi-band voltage-controlled oscillator in which switching means can certainly be turned on and off. For achieving the above object, the oscillator of the present invention includes a negative source generator (67) coupled to an output of a buffer transistor (22) from which an oscillation frequency of an oscillating transistor (21) is released, switching means (40) for selectively switching between an output of the negative source generator (67) and a positive power source, and mode switching means (66) receiving an output frequency switching signal from the outside. An output of the switching means (40) controls an opening and short-circuiting operation of first switching means (38a) to selectively release oscillation outputs in a low frequency band and high frequency band from an output port (49).

A problem to be solved is to stabilize temperature characteristics in various characteristics of a magnetic element. A magnetic element has a coil formed by winding a conductor, EP cores constituted of a magnetic material and passing magnetic flux generated in the coil, a solid part provided between EP cores opposing each other among the EP cores, and having a ceramics material or a resin material, in which the solid part is in contact with opposing faces of the respective opposing EP cores, and the solid part is provided with a thickness dimension ranging from 3 μm to 30 μm.

The invention relates to a ceramic dielectric material and to capacitors including the ceramic dielectric material. The ceramic dielectric material of the invention exhibits a high relative dielectric constant and a stable temperature characteristic of the relative dielectric constant.