84results about How to "Stable resistivity" patented technology

A metal film composed of multiple atomic layers continuously formed by atomic layer deposition of Ru and Ta or Ti includes at least a top section and a bottom section, wherein an atomic composition of Ru, Ta or Ti, and N varies in a thickness direction of the metal film. The atomic composition of Ru, Ta or Ti, and N in the top section is represented as Ru(x1)Ta / Ti(y1)N(z1) wherein an atomic ratio of Ru(x1) / (Ta / Ti(y1)) is no less than 15, and z1 is 0.05 or less. The atomic composition of Ru, Ta or Ti, and N in the bottom section is represented as Ru(x2)Ta / Ti(y2)N(z2) wherein an atomic ratio of Ru(x2) / (Ta / Ti(y2)) is more than zero but less than 15, and z2 is 0.10 or greater.

A conductive silicone rubber composition comprising (A) an organopolysiloxane having at least two aliphatic unsaturated groups, (B) a conductive powder comprising a silver powder premixed with 0.2-5% by weight of fine powder selected from the group consisting of inorganic fillers and spherical organic resins, and (C) a curing agent has a stable volume resistivity.

An electro-conductive member for electrophotography, including an electro-conductive mandrel and an electro-conductive layer; and a process cartridge and an electrophotographic apparatus using the same. The layer contains a binder resin having a sulfo or a quaternary ammonium group as an ion exchange group, and an ion opposite in polarity to the ion exchange group. The resin has any one of structures represented by formulas (1)-1 and (1)-2, and any one of structures represented by formulas (2)-1 to (2)-3; and the resin has a molecular structure preventing occurrence of a matrix-domain structure. M represents an integer of 2-20, n represents an integer of 5-50, p represents an integer of 1-25, q represents an integer of 1-15, and r represents an integer of 1-12.—(CF2)m—  Formula (1)-1—(CF2—CF2—O)n—  Formula (1)-2—(CH2—CH2—O)p—  Formula (2)-1—(CH2—CHCH3—O)q—  Formula (2)-2—(CH2—CH2—CH2—CH2—O)r—  Formula (2)-3

The invention discloses a preparation method of a large-size silicon nitride crucible. According to the method, (1) silicon nitride powder, a dispersing agent, sintering aids, a binding agent and a solvent are well mixed, such that a slurry is obtained; (2) the slurry is added into a mold cavity of a gypsum mold under stirring; the mold is placed in an environment with constant temperature and constant humidity, such that the mold can absorb and discharge water; and a molded cured blank is obtained; (3) a mold core and side molds of the mold are removed, and the molded cured blank is placed in a curing furnace, such that the product is cured and dried, and a green body is obtained; (4) the green body is placed in a gas pressure sintering furnace, and is subjected to segmented sintering; when sintering is finished, the temperature is reduced, the pressure is released and the product is fetched from the furnace, such that the silicon nitride crucible is obtained. According to the invention, silicon dioxide and magnesium silicon nitride are adopted as sintering aids, such that the prepared silicon nitride crucible has low oxygen impurity and metal impurity contents, large bulk density, high high-temperature strength, and large size. The crucible can be widely applied in various non-ferrous metal smelting and silicon crystal ingot casting. The preparation method is simple to operate, and is easy to popularize.

The invention provides a manufacturing method of an N type / P type monocrystalline silicon crystal ingot. During the lifting growth of the crystal ingot, monocrystalline silicon strips containing uniform distribution opposite type conducting elements (sub doping elements) are molten through laser arrays; the sub doping elements are added into the flux in a continuous and adjustable way; carriers increased in the crystal ingot due to the fast rise of the concentration of main doping elements in flux caused by dephlegmation are counteracted, so that the problem of fast reduction of the electrical resistivity in a late growth stage of the crystal ingot growth is solved. By precisely controlling the addition quantity and the addition speed of the sub doping elements, the carrier density in the crystal ingot in a new crystallization region is stabilized, so that the electrical resistivity of the new crystallization region is stabilized; the fluctuation amplitude of the axial electrical resistivity of the whole crystal ingot is reduced; the utilization rate of the crystal ingot and the electric performance of wafers are improved.

The invention discloses a resistance reducing device for a ground grid. The resistance reducing device is characterized by comprising a hollow pipe network (1), wherein a water injection port (3) is arranged in the hollow pipe network (1), a valve (4) is arranged on the water injection port (3), the hollow pipe network (1) is formed by connecting hollow pipes (6), and uniformly-distributed pores (2) are arranged at the periphery of the pipe wall of each hollow pipe (6). According to the resistance reducing device, liquid (such as water or resistance reducing agent) is injected to the hollow pipe network through the water injection port, and the soil around the ground grid is wetted, so that the soil resistivity is reduced, and the purpose of reducing the ground resistance is realized.

A film is formed under vacuum by a step of purifying and / or flattening the base material (13) by irradiating the base material (13) with a gas cluster ion beam (4a); by a step of forming an intermediate layer film by evaporating / vaporizing an intermediate layer film forming material, allowing the evaporated / vaporized material to adhere to the surface of the base material (13), and irradiating the intermediate layer film forming material with a gas cluster ion beam (4a); and by evaporating / vaporizing a carbon film forming material containing a carbonaceous material containing substantially no hydrogen, and a boron material, allowing the evaporated / vaporized material to adhere to the surface of the intermediate layer film, and irradiating the carbon film forming material with a gas cluster ion beam (4a).

The invention discloses a method for preparing a charcoal / charcoal composite material heating element used for a polycrystalline silicon furnace. The method comprises the following steps: a U-shaped charcoal fiber billet is deposited after the U-shaped charcoal fiber billet is subjected to high-temperature purification pretreatment at a temperature of between 1,600 and 2,800 DEG C; the U-shaped charcoal fiber billet is subjected to cracking densification by using high-purity N2 as air-carrying and diluent gas and C3H6 as a charcoal source to prepare a charcoal / charcoal composite billet at a temperature of between 850 and 1,200 DEG C for 100 to 400 hours at a furnace gas pressure of between 0.5 and 2.5 kPa; the charcoal / charcoal composite billet which is densified to certain density is subjected to machining, acid cleaning and villaumite cleaning, and is subjected to high-temperature purification treatment at a temperature of between 2,000 and 2,800 DEG C; the charcoal / charcoal composite billet is subjected to surface coating treatment by using the high-purity N2 as the air-carrying and diluent gas and C3H6 as the charcoal source at a cracking temperature of between 900 and 1,300 DEG C for 10 to 100 hours at a furnace gas pressure of between 1.0 and 4.0 kPa; and technical index of a finished product of the charcoal / charcoal composite material heating element is determined. The method has the advantages that the method can prepare a large-sized heteromorphy thin-walled charcoal / charcoal composite material heating element with high purity, stable electric resistivity along with temperature variation and long service life.

The invention relates to a preparation method of a continuous SiC fiber having a surface carbon-rich structure, which comprises the following steps: continuously drawing a polycarbosilane (PCS) unmelted fiber at a traveling speed of 0.5-3 m / min to pass through a high-temperature pipe furnace of 1300-1400 DEG C, and firing, wherein inert atmosphere is used at both ends of the high-temperature pipe furnace to perform gas seal; gas mixture of alkane and the inert atmosphere is introduced into the inner side of the air seal at the inlet end; and the PCS unmelted fiber is converted through pyrolysis, thus preparing the continuous SiC fiber. According to the invention, the process is simple and convenient to operate; the manufacturing cost is low; and the prepared SiC fiber has the advantages of stable surface carbon layer structure, low and adjustable resistivity, high temperature resistance and favorable mechanical property, can suitably serve as a high-performance wave-absorbing structural composite material having integrated functional requirements for wave absorption and load bearing, and is especially applicable to the fields of high-performance weaponry, aviation, aerospace, nuclear industry and the like.

The invention discloses iron tailing large-slump high-strength conductive concrete and a preparation method thereof, and belongs to the technical field of building material concrete. The conductive concrete comprises the following components in parts by weight: 250-450 parts of cement, 1050-1180 parts of coarse aggregate, 720-960 parts of fine aggregate, 70-150 parts of admixture, 25.6-60.0 partsof expanding agent, 1.6-6.0 parts of water-based dispersing agent, 4.8-10.8 parts of polycarboxylate superplasticizer and 170-175 parts of water, wherein the unit is kg / m3. By adopting the technical scheme provided by the invention, the requirements of mechanical properties, working properties and conductivity of the conductive concrete can be effectively met.

The invention relates to smart concrete, in particular to CCCW-mixing graphite smart concrete formed by adding CCCW concrete mixture and graphite into base materials comprising silicate cement and sand, wherein the mass ratio of cement to sand is 1 to 1; and other components in percentage by weight to the total mass of the cement and the sand are as follows: 1 to 2 percent of CCCW concrete mixture and 5 to 25 percent of graphite. By utilizing the tunneling conducting effect between the contact electric conduction of the graphite and the electric conduction phase, the invention forms the graphite electrical conduction concrete with smart property, and has the advantages of favorable electric conduction, high mechanical property, stable electrical conductivity and pressure-sensitivity, simple preparation, lower price, and the like; and the material can be utilized for manufacturing a concrete structure sensor element, can be used for the effective execution of the health supervision of the concrete structure and can also be used as an industrial anti-static material, an electrical engineering material and an electrothermal material.