The present invention relates to the field of optoelectronic devices, and provides a method for manufacturing a short cavity long surface emitting laser, comprising the following steps: S1, select a substrate, and grow a buffer layer on the substrate; S2, grow on the buffer layer Intermediate layer; meanwhile, fabricate a grating layer on the buffer layer, the grating layer is located on opposite sides of the intermediate layer; the intermediate layer includes a lower waveguide layer, a multi-quantum well layer and an upper waveguide layer that grow upwards in sequence ; The middle layer is connected to the laser gain region, and the two grating layers are respectively connected to the passive waveguide growth region; S3, sequentially growing a stop layer, a cladding layer and a contact layer above the upper waveguide layer; S4, making a ridge waveguide, isolation region and contact strip; S5, making P-face electrode and N-face electrode, and cutting the substrate thin; S6, stripping and stripping. The invention integrates a passive waveguide area on both sides of the gain area, which solves the problem of difficult process caused by the small cavity length.