30results about How to "Minimizes attack" patented technology

A friction material is made by molding and curing a composition containing a fibrous base that includes stainless steel fibers but not other steel fibers, a binder, and a friction modifier that includes at least two types of hard particles having a large Mohs hardness, bronze powder and a specific amount of tin sulfide. The friction material has a excellent balance of properties, including a high strain linearity that provides a excellent brake feel, a high torque linearity and a excellent effectiveness, and also minimizes disc rotor attack, disc pad wear and metal pickup. Such friction materials are particularly suitable for automotive applications, such as disc pads.

A direct displacement plating process provides a uniform, adherent coating of a relatively stable metal (e.g., nickel) on a highly reactive metal (e.g., aluminum) that is normally covered with a recalcitrant oxide layer. The displacement reaction proceeds, preferably in a nonaqueous solvent, as the oxide layer is dissolved by a fluoride activator. Halide anions are used to provide high solubility, to serve as an anhydrous source of stable metal ions, and to control the rate of the displacement reaction. A low concentration of activator species and little or no solution agitation are used to cause depletion of the activator species within pores in the surface oxide so that attack of the reactive metal substrate is minimized. Used in conjunction with electroless nickel deposition to thicken the displacement coating, this process can be used to render aluminum pads on IC chips solderable without the need for expensive masks and vacuum deposition operations. Such coatings can also be used to preserve or restore wire bondability, or for corrosion protection of aluminum and other reactive structural metals and alloys. A thin layer of immersion gold can be used to protect the thickened coating from oxidation. The solderable aluminum IC chip pads provide the basis for a maskless bumping process for flip chip attachment.

In a method of performing an anisotropic etch on a substrate in an inductively coupled plasma etch chamber, at least three cycles of a procedure consisting essentially of the four following steps are performed:

• • a. depositing a protective polymer on a patterned substrate;
  • b. performing a first low pressure etch to partially remove the deposited protective polymer at a pressure less than 40 mTorr;
  • c. performing a high pressure etch at a pressure between between 40 mT and 1000 mT to form a portion of a trench in the substrate; and
  • d. performing a second low pressure etch at a pressure less than 40 MTorr to reduce surface roughness.

This method permits the fabrication of deep trenches with reduced surface roughness.

A drug injection needle comprises a puncturing needle part having a puncturing part capable of puncturing a body, a drug introducing needle part capable of communicating with the inside of the drug container, and a housing supporting the puncturing needle part and the drug introducing needle part to allow the liquid drug to flow between the needle parts. The outer diameter of the puncturing part is not more than 0.254 mm. The outer diameter of the drug introducing needle part is larger than at least that of the vicinity of the distal end of the puncturing part of the puncturing needle part, and a cutting edge is formed at the end of the drug introducing needle part for penetrating through an elastic member that is provided to seal the drug injection port of the drug container.

A method of masking a cryptographic operation using a secret value, comprising the steps of dividing the secret value into a plurality of parts; combining with each part a random value to derive a new part such that the new parts when combined are equivalent to the original secret value; and utilizing each of the individual parts in the operation.

Bottom-up filling of fine Damascene trenches and vias in semiconductor chips is attained using a copper pyrophosphate electroplating bath with a single accelerating additive species present at low concentration (<5 μM). This bath is much easier to control than the acid copper sulfate bath, which employs a complicated additive system involving a minimum of two organic additives and chloride ion (as well as significant additive breakdown products). Pyrophosphate copper deposits exhibit stable properties without annealing and are typically twice as hard as acid sulfate copper deposits, which facilitates chemical mechanical planarization. The mechanical properties and texture of the fine-grained pyrophosphate copper deposits are also much less substrate dependent, which minimizes the effects of variations and flaws in the barrier and seed layers. Attack of copper seed layers is minimized for the copper pyrophosphate bath, which operates in the pH 8 to 9 range. The resistivity of pyrophosphate and annealed acid sulfate copper deposits are substantially equivalent.

A Tamper-Resistant Communication layer (TRC) adapted to mitigate ad hoc network attacks launched by malicious nodes is presented. One embodiment of the invention utilizes TRC, which is a lean communication layer placed between a network layer and the link layer of a network protocol stack. All aspects of the network protocol stack, with the exception of the routing protocol and data packet forwarding mechanism in the network layer, are unchanged. TRC takes charge of certain key functions of a routing protocol in order to minimize network attacks. Additionally, TRC implements highly accurate self-monitoring and reporting functionality that can be used by nodes in the network to detect compromised nodes. TRC of a node controls its ability to communicate with other nodes by providing non-repudiation of communications. The tamper-resistant nature of TRC provides high assurance that it cannot be bypassed or compromised.

The present invention is provided to form a floating gate of a flash memory device capable of restricting a thickness of a buffer oxide film to a thickness less than 50 Å to minimize increment in a thickness due to a wall oxidation process in the case of depositing the buffer oxide film prior to depositing the first polysilicon film and the pad nitride film, and reducing a thickness of the first polysilicon film with an HF dip time minimized in a pre-treatment cleaning process prior to depositing the second polysilicon film, and protecting the first polysilicon film from being attacked in a pad nitride film strip process, by removing at least 50% of the buffer oxide film in the pad nitride film strip process.

Systems and methods for adaptive recursive descent data redundancy are described herein. In one embodiment, a method can include identifying the data object or file for Quantum Fragmentation, determining, via a first portion of a Quantum Fragmentation instance, a factor of fragmentation for the data object or file, transforming the data object or file into a plurality of first data fragments according to the factor of fragmentation by applying one or more cryptographic processing, integrity checking, and resilient fragmentation schemes, via the first portion of the Quantum Fragmentation instance, and persisting, via the first portion of the Quantum Fragmentation instance, each of the plurality of first data fragments to a data store of a plurality of available Cloud or other data stores or to a subsequent portion of the Quantum Fragmentation instance, wherein the persistence for each of the first data fragment occurs independently from the other first data fragments.